SiT8008B
Low Power Programmable Oscillator
The Smart Timing Choice
Features Applications
Any frequency between 1 MHz and 110 MHz accurate to 6 decimal
places
Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books, SSD,
GPON, EPON, etc
100% pin-to-pin drop-in replacement to quartz-based XO Ideal for high-speed serial protocols such as: USB, SATA, SAS,
Excellent total frequency stability as low as ±20 ppm
Operating temperature from -40°C to 85°C. For 125°C and/or -55°C
options, refer to SiT1618, SiT8918, SiT8920
Low power consumption of 3.5 mA typical at 1.8V
Standby mode for longer battery life
Fast startup time of 5 ms
LVCMOS/HCMOS compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Instant samples with Time Machine II and field programmable
oscillators
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
For AEC-Q100 oscillators, refer to SiT8924 and SiT8925
Firewire, 100M / 1G / 10G Ethernet, etc.
Electrical Specifications
Table 1. Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values
are at 25°C and nominal supply voltage.
Parameters
Symbol
Min.
Typ.
Max.
Unit
Condition
Frequenc y Range
Output Frequency Range
f
1
–
110
MHz
Frequenc y Stability and Aging
Frequenc y Stabili ty
F_stab
-20
–
+20
ppm
Inclusive of initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power s upply
voltage and load.
-25
–
+25
ppm
-50
–
+50
ppm
Operating Tempera t ure Range
Operating Tempera t ure Range
T_use
-20
–
+70
°C
Extended Commercial
-40
–
+85
°C
Industrial
Supply Voltage and Cur rent Consumption
Supply Voltage
Vdd
1.62
1.8
1.98
V
Contact SiTime for 1.5V support
2.25
2.5
2.75
V
2.52
2.8
3.08
V
2.7
3.0
3.3
V
2.97
3.3
3.63
V
2.25
–
3.63
V
Current Consumpt ion
Idd
–
3.8
4.5
mA
No load condition, f = 20 MHz, Vdd = 2.8V to 3.3V
–
3.7
4.2
mA
No load condition, f = 20 MHz, Vdd = 2.5V
–
3.5
4.1
mA
No load condition, f = 20 MHz, Vdd = 1.8V
OE Disable Current
I_OD
–
–
4.2
mA
Vdd = 2.5V to 3.3V, OE = GND, Output in high-Z state
–
–
4.0
mA
Vdd = 1.8V, OE = GND, Output in high-Z state
Standby Current
I_std
–
2.1
4.3
µA
ST = GND, Vdd = 2.8V to 3.3V, Output is weakly pulled down
–
1.1
2.5
µA
ST = GND, Vdd = 2.5V, Output is weakly pulled down
–
0.2
1.3
µA
ST = GND, Vdd = 1.8V, Output is weakly pulled down
LVCMOS Output Characteristics
Duty Cycle
DC
45
–
55
%
All Vdds. See Duty Cycle definit i on in Figure 3 and Footnote 6
Rise/Fall Tim e
Tr, Tf
–
1
2
ns
Vdd = 2.5V, 2.8V, 3.0V or 3. 3V, 20% - 80%
–
1.3
2.5
ns
Vdd =1.8V, 20% - 80%
–
–
2
ns
Vdd = 2.25V - 3.63V, 20% - 80%
Output High Voltage
VOH
90%
–
–
Vdd
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
Output Low Voltage
VOL
–
–
10%
Vdd
IOL = 4 mA (Vdd = 3. 0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1. 8V)
SiTime Corporation
990 Almanor Avenue, Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Rev. 1.03
Revised August 30, 2016
SiT8008B
Low Power Programmable Oscillator
The Smart Timing Choice
Rev. 1.03
Page 2 of 13
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1
4
2
3
Table 1. Electrical Characteristics (continued)
Parameters
Symbol
Min.
Typ.
Max.
Unit
Condition
Input Character is ti c s
Input High Voltage
VIH
70%
–
–
Vdd
Pin 1, OE or ST
Input Low Voltage
VIL
–
–
30%
Vdd
Pin 1, OE or ST
Input Pull-up Impedance
Z_in
50
87
150
k
Ω
Pin 1, OE logic high or logic low, or ST logic high
2
–
–
M
Ω
Pin 1, ST logic low
Startup and Resume Timing
Startup Time
T_start
–
–
5
ms
Measured from the time Vdd reaches its rated minimum value
Enable/Disable Time
T_oe
–
–
130
ns
f = 110 MHz. For other frequenc i es, T_oe = 100 ns + 3 * cycles
Resume Time
T_resume
–
–
5
ms
Measured from the time ST pin cross es 50% threshold
Jitter
RMS Period Jitter
T_jitt
–
1.8
3
ps
f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
–
1.8
3
ps
f = 75 MHz, Vdd = 1.8V
Peak-to-peak Period Jitter
T_pk
–
12
25
ps
f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
–
14
30
ps
f = 75 MHz, Vdd = 1.8V
RMS Phase Jitter (random)
T_phj
–
0.5
0.9
ps
f = 75 MHz, Integration bandwidt h = 900 kHz to 7.5 MHz
–
1.3
2
ps
f = 75 MHz, Integration bandwidt h = 12 kHz to 20 MHz
Table 2. Pin Description
Top View
OE/ST/NC VDD
GND OUT
Notes:
1.
In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven.
If pin 1 needs to be left floating, use the NC option.
2.
A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Figure 1. Pin Assignments
Pin
Symbol
Functionality
1
OE/ ST/NC
Output
Enable
H[1]: specified frequency output
L: output is high impedance. Only out put driver is disabled.
Standby
H[1]: specified frequency output
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
No Connect
Any voltage between 0 and Vdd or Open[1]: Specified frequency
output. Pin 1 has no function.
2
GND
Power
Electrical ground
3
OUT
Output
Oscillator output
4
VDD
Power
Power supply voltage[2]
SiT8008B
Low Power Programmable Oscillator
The Smart Timing Choice
Rev. 1.03
Page 3 of 13
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Table 3. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the
IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Min.
Max.
Unit
Storage Tempera tur e
-65
150
°C
Vdd
-0.5
4
V
Electrostatic Discharge
–
2000
V
Soldering Tempera t ure (follow standard Pb fre e sol der ing guidelines)
–
260
°C
Junction Temperature[3]
–
150
°C
Note:
3.
Exceeding this temperature for extended period of time may damage the device.
Table 4. Thermal Consideration[4]
Package
θJA, 4 Layer Board
(°C/W)
θJA, 2 Layer Board
(°C/W)
θJC, Bottom
(°C/W)
7050
142
273
30
5032
97
199
24
3225
109
212
27
2520
117
222
26
2016
152
252
36
Note:
4.
Refer to JESD51 for θJA and θJC definitions, and reference layout used to determine the θJA and θJC values in the above table.
Table 5. Maximum Operating Junc tion Temperature[5]
Max Operating Temperature (ambient)
Maximum Operating Junc t ion Temperature
70°C
80°C
85°C
95°C
Note:
5.
Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 6. Environmental Compli ance
Parameter
Condition/Test Method
Mechanical Shock
MIL-STD-883F, Method 2002
Mechanical Vibration
MIL-STD-883F, Method 2007
Temperature Cycle
JESD22, Method A104
Solderability
MIL-STD-883F, Method 2003
Moisture Sensitivity Level
MSL1 @ 260°C
SiT8008B
Low Power Programmable Oscillator
The Smart Timing Choice
Rev. 1.03
Page 4 of 13
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Power
Supply
HZ
HZ
HZ
Test Circuit and Waveform[6]
Vdd Vout Test
Point tr
4 3
0.1µF 1 2
15pF
(including probe
and fixture
capacitance)
80% Vdd
50%
20% Vdd
Vdd
OE/ST Function
1kΩ
Note:
Figure 2. Test Circuit Figure 3. Waveform
6.
Duty Cycle is computed as Duty Cycle = TH/Period.
Timing Diagrams
Vdd
90% Vdd
T_start
No Glitch
[7]
50% Vdd
ST Voltage
Vdd
T_resume
Pin 4 Voltage
CLK Output
during start up
CLK Output
T_start: Time to start from power-off T_resume : Time to resume from ST
Figure 4. Startup Timing (OE/ST Mode) Figure 5. Standby Resume Timing (ST Mode Only)
50% Vdd
OE Voltage
CLK Output
Vdd
T_oe
Vdd
OE Voltage
CLK Output
50% Vdd
T_oe
T_oe: Time to re-enable the clock output T_oe: Time to put the output in High Z mode
Figure 6. OE Enable Timing (OE Mode Only) Figure 7. OE Disable Timing (OE Mode Only)
Note:
7.
SiT8008 has “no runt” pulses and “no glitch” output during startup or resume.
HZ
tf
High Pulse
(TH)
Low Pulse
(TL)
Period
Rev. 1.03
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SiT8008B
Low Power Programmable Oscillator
The Smart Timing Choice
Performance Plots[8]
6.0
5.5
5.0
4.5
4.0
3.5
3.0 0 10 20 30 40 50 60 70 80 90 100 110
Frequency (MHz)
20
15
10
5
0
-5
-10
-15
-20
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80
Temperature (°C)
DUT1
DUT6
DUT2
DUT7
DUT3
DUT8
DUT4
DUT9
DUT5
DUT10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 10 20 30 40 50 60 70 80 90 100 110
Frequency (MHz)
55
54
53
52
51
50
49
48
47
46
45 0 10 20 30 40 50 60 70 80 90 100 110
Frequency (MHz)
Figure 8. Idd vs Frequency Figure 9. Frequency vs Temperature
Figure 10. RMS P er iod Jitter vs Frequency Figure 11. Duty Cycle vs Frequency
Figure 12. 20%-80 % R ise Time vs Temperature Figure 13. 20%-80% Fall Time vs Temperature
1.8 2.5 2.8 3.0 3.3
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
2.5
2.0
1.5
1.0
0.5
0.0
-40
-15
10
35
60
85
Temperature (°C)
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
2.5
2.0
1.5
1.0
0.5
0.0
-40
-15
10
35
60
85
Temperature (°C)
Idd
(mA)
Rise
time
(ns)
RM
S
period
ji
tter (
ps)
Fall
time
(ns)
Du
ty cyc
le
(
%)
F
requency
(
ppm)
Rev. 1.03
Page 6 of 13
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SiT8008B
Low Power Programmable Oscillator
The Smart Timing Choice
Performance Plots[8]
Figure 14. RMS Integrated Phase Jitter Random
(12 kHz to 20 MHz) vs Frequency[9] Figure 15. RMS Integrated Phase Jitter Random
(900 kHz to 20 MHz) vs Frequency[9]
Notes:
8.
All plots are measured with 15 pF load at room temperature, unless otherwise stated.
9.
Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies below 40 MHz.
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
2.0
1.8
1.6
1.4
1.2
1.0
10
30
50
70
90
110
Frequency (MHz)
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
0.9
0.8
0.7
0.6
0.5
0.4
10
30
50
70
90
110
Frequency (MHz)
IPJ
(ps)
IPJ
(ps)
Rev. 1.03
Page 7 of 13
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SiT8008B
Low Power Programmable Oscillator
The Smart Timing Choice
Programmable Driv e S trength
The SiT8008 in clud es a pr ogr ammabl e dr iv e st rength f eat ur e
to provide a si mple, flexibl e tool to opt imize the clock rise/fall
time for specific applications. Benefits from the programmable
drive strength feature are:
•
Improves system radiated electromagnetic interference
(EMI) by slowing down the clock rise/fall time
•
Improves the downstream clock receiver’s (RX) jitter by de-
creasing (speeding up) the cl oc k rise/fall time.
•
Ability to drive large capacitive loads while maintaining full
swing with sha rp edge rates.
For more detai led information abo ut rise/fall ti me control and
drive strength selection, see the SiTime Application Notes
section: http://www.sitime.com/support/application-notes.
EMI Reduction by Slowing Rise/Fall Time
Figure 16 shows the harmonic power reduction as the rise/fall
times are increased (slowed down). The rise/fall times are
expressed as a rat io of the c lock per iod. F or the r atio of 0.05,
the signal is very close to a square wave. For the ratio of 0.45,
the rise/fall t imes are ver y close to near -triangul ar waveform.
These results, for example, show that the 11th clock harmonic
can be reduced by 35 dB if the rise/fall edge is increased from
5% of the perio d to 45% of the period.
trise=0.05
trise=0.1
10
trise=0.15
trise=0.2
The SiT8008 can supp ort up to 60 pF or higher in maximum
capacitive loads with drive strength settings. Refer to the
Rise/Fall T ime Tables (Tabl e 7 to 11) to determine the pr oper
drive strength for the desired combination of output load vs.
rise/fall time.
SiT8008 Drive Strength Selection
Tables 7 through 11 define the rise/fall time for a given capac-
itive load and supply voltage.
1.
Select the table that matches the SiT8008 nominal supply
voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V).
2.
Select the capacitive load column that matches the appli-
cation requirement (5 pF to 60 pF)
3.
Under the capacitive load column, select the desired
rise/fall times.
4.
The left-most column represents the part number code for
the corresponding drive strength.
5.
Add the drive strength code to the part number for ordering
purposes.
Maximum Fre quency Calculation
Any given rise/fall time in Table 7 through 11 dictates the
maximum frequency under which the oscillator can operate
with guaranteed full output swing over the entire operating
temperature r ange. T his max freque ncy can be c alculat ed as
the followin g:
0
trise=0.25
trise=0.3 1
-10
-20
trise=0.35
trise=0.4
trise=0.45
M ax F requency =
5 x T rf_ 20 /80
-30
-40
-50
-60
-70
-80
1 3 5 7 9 11
Harmonic num ber
where Trf_20/80 is the typical value for 20%-80% rise/fall
time.
Example 1
Calculate fMAX for the following condition:
•
Vdd = 1.8V (Table 1)
•
Capacitive L oad: 30 pF
Figure 16. Harmonic EMI reduction as a Function of
Slower Rise/Fall Time
Jitter Reduction with Faster Rise/Fall Time
Power supply noise can be a source of jitter for the
downstream ch ips et. One way t o reduc e this jitt er i s to s peed
up the rise/fall time of the input clock. Some chipsets may also
require faster rise/fall time in order to reduce their sensitivity to
this type of jitter. Refer to the Rise/Fall Time Tables (Table 7 to
Table 11) to determine the proper dr ive strength.
High Output Load Capability
The rise/f all time of the input clock varies as a functi on of the
actual capacitive load the clock drives. At any given drive
strength, the r ise/f all time bec omes slo wer a s the output load
increases. As an example, for a 3.3V SiT8008 device with
default drive strength setting, the typical r ise/fall time is 1 ns
for 15 pF output load. The typical r i s e/fall time slows down to
2.6
ns when the output load increases to 45 pF. One can
choose to speed up the rise/fall time to 1.83 ns by then
increasing the drive strength setting on the SiT8008.
•
Desired Tr/f time = 3 ns (rise/fall time part number code = E)
• fMAX = 66.666660
Part number for t he abov e example:
SiT8008IE12-18E-66.666660
Drive strength code is inserte d her e. Default setting is “-”
Harmonic
amplitude
(dB)
Rev. 1.03
Page 8 of 13
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SiT8008B
Low Power Programmable Oscillator
The Smart Timing Choice
Rise/Fall Time (20% to 80%) vs CLOAD Tables
Table 7. Vdd = 1.8V Rise/Fall Times for Specific CLOAD Table 8. Vdd = 2.5V Rise/Fall Times for Specific CLOAD
Table 9. Vdd = 2.8V Rise/Fall Times for Specific CLOAD Table 10. Vdd = 3.0V Rise/ Fall Times for Specific CLOAD
Table 11. Vd d = 3.3V Rise/Fall Times for Specific CLOAD
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF
L
3.39
6.88
11.63
17.56
23.59
A
1.74
3.50
6.38
8.98
12.19
R
1.16
2.33
4.29
6.04
8.34
B
0.81
1.82
3.22
4.52
6.33
T or "‐": default
0.46
1.00
1.86
2.60
3.84
E
0.33
0.87
1.64
2.30
3.35
U
0.28
0.79
1.46
2.05
2.93
F
0.25
0.72
1.31
1.83
2.61
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF
L
6.16
11.61
22.00
31.27
39.91
A
3.19
6.35
11.00
16.01
21.52
R 2.11 4.31 7.65 10.77 14.47
B
1.65
3.23
5.79
8.18
11.08
T
0.93
1.91
3.32
4.66
6.48
E
0.78
1.66
2.94
4.09
5.74
U
0.70
1.48
2.64
3.68
5.09
F or "‐": default
0.65
1.30
2.40
3.35
4.56
Rise/Fall Time Typ (ns)
Drive Strength \ C
LOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L
4.13
8.25
12.82
21.45
27.79
A
2.11
4.27
7.64
11.20
14.49
R
1.45
2.81
5.16
7.65
9.88
B
1.09
2.20
3.88
5.86
7.57
T
0.62
1.28
2.27
3.51
4.45
E or "‐": default
0.54
1.00
2.01
3.10
4.01
U
0.43
0.96
1.81
2.79
3.65
F
0.34
0.88
1.64
2.54
3.32
Rise/Fall Time Typ (ns)
Drive Strength \ C
LOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L
3.77
7.54
12.28
19.57
25.27
A
1.94
3.90
7.03
10.24
13.34
R
1.29
2.57
4.72
7.01
9.06
B
0.97
2.00
3.54
5.43
6.93
T
0.55
1.12
2.08
3.22
4.08
E or "‐": default
0.44
1.00
1.83
2.82
3.67
U
0.34
0.88
1.64
2.52
3.30
F
0.29
0.81
1.48
2.29
2.99
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF 15 pF 30 pF 45 pF 60 pF
L
3.60
7.21
11.97
18.74
24.30
A
1.84
3.71
6.72
9.86
12.68
R
1.22
2.46
4.54
6.76
8.62
B
0.89
1.92
3.39
5.20
6.64
T or "‐": default
0.51
1.00
1.97
3.07
3.90
E
0.38
0.92
1.72
2.71
3.51
U 0.30 0.83 1.55 2.40 3.13
F
0.27
0.76
1.39
2.16
2.85
Rev. 1.03
Page 9 of 13
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SiT8008B
Low Power Programmable Oscillator
The Smart Timing Choice
Pin 1 Configuration Options (OE, S T, or NC)
Pin 1 of the SiT8008 can be factory-programmed to support
three modes: Output Enable (OE), standby (ST) or No
Connect (NC). These modes can also be programmed with the
Time Machine usin g field prog ram mabl e devices.
Output Enable (OE) Mode
In the OE mode, applying logic Low to the OE pin only disables
the output driver and puts it in Hi-Z mode. The core of the
device continues to operate normally. Power consumption is
reduced due to the inactivity of the output. When the OE pin is
pulled High, the output is typically enabled i n <1 µs.
Standby (ST) Mode
In the ST mode, a device enters into the standb y mod e when
Pin 1 pulled Low. All internal c ircuits of the devic e are turned
off. The current is reduced to a standby current, typically in the
range of a fe w µA. When ST is pulled High, the device go es
through the “resume” process, which can take up to 5 ms.
No Connect (NC) Mode
In the NC mode, the device always operates in its normal
mode and outputs the specified frequency regardless of the
logic level on pin 1.
Table 12 below summarizes the key relevant parameters in the
operation of the device in OE, ST, or NC mode.
Table 12. OE vs. ST vs. NC
OE
ST
NC
Active current 20 MHz (max, 1. 8V )
4.1 mA
4.1 mA
4.1 mA
OE disable current (max. 1.8V)
4 mA
N/A
N/A
Standby current (typical 1.8V)
N/A
0.6 µA
N/A
OE enable time at 20 MHz (max)
200 ns
N/A
N/A
Resume time from standby
(max, all frequency)
N/A
5 ms
N/A
Output driver in OE disable/standby mode
High Z
weak
pull-down
N/A
Output on Startup and Resume
The SiT8008 comes with gated output. Its clock output is
accurate to th e rated frequency stabilit y within the first pul se
from initial device startup or resume from the st andby mode.
In addition, the SiT8008 features “no runt” pulses and “no
glitch” output during startup or resume as shown in the
waveform captures in Figure 17 and Figure 18.
Figure 17. Startup Waveform vs. Vdd
Figure 18. Startup Waveform vs. Vdd
(Zoomed-in View of Figure 17)
Instant Samples with Time Machine and
Field Programmable Oscillators
SiTime supports a field programmable version of the SiT8008
low power oscillator for fast prototyping and real time custom-
ization of features. The field programmable devices (FP
devices) are available for all five standard SiT8008 package
sizes and can be configured to one’s exact specification using
the Time Machine II, an USB powered MEMS oscillator
programmer.
Customizab le Features of the SiT8008 FP Devices Include
•
Frequency between 1 MHz to 110 MHz
•
Three frequency stability options, ±20 ppm, ±25 ppm,
±50 ppm
•
Two operating temperatures, -20 t o 70° C or -40 t o 85°C
•
Six supply voltage options, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V and
2.25 to 3.63V continuous
•
Output drive strength
•
OE, ST or NC mode
For more infor mation regarding SiT ime’s field programm able
solutions, visit http://www.sitime.com/time-machine and
http://www.sitime.com/fp-devices.
SiT8008 is typically factory-programmed per customer
ordering codes for volume delivery.
Rev. 1.03
Page 10 of 13
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SiT8008B
Low Power Programmable Oscillator
The Smart Timing Choice
2.2
9
1.
2
1.
1.4
0.75 ± 0.05
Dimensions and Patterns
Package Size – Dimensions (Unit: mm)[10] Recommended Land Pa t t e rn (Unit: mm)[11]
2.0 x 1.6 x 0.75 mm
2.5 x 2.0 x 0.75 mm
2.5 ± 0.05
1.00
1.9
#4 #3
#3 #4
YXXXX
#1
#2
#2 #1
0.75
1.1
3.2 x 2.5 x 0.75 mm
3.2 ± 0.05
#4
#3
#3
2.1
#4
2.2
YXXXX
#1 #2
#2
#1
0.9
1.4
5.0 x 3.2 x 0.75 mm
5.0 ± 0.05
2.39 2.54
#4
YXXXX
#3 #3 #4
#1 #2 #2 #1
1.15 1.5
3.2 ± 0.05
2.
0
±
0.05
2.5 ± 0.05
0.75
±
0.05
0.8
0.9
0.75 ± 0.05
0.
5
0.7
1.1
2.2
1.9
1.5
1.6
1.2
1.0
Rev. 1.03
Page 11 of 13
www.sitime.com
SiT8008B
Low Power Programmable Oscillator
The Smart Timing Choice
Package Size – Dimensions (Unit: mm)
[10]
Recommended Land Pat t e rn (Unit: mm)
[11]
7.0 x 5.0 x 0.90 mm
5.08
1.4
5.08
2.2
Dimensions and Patterns
7.0 ± 0.05
5
.
0
± 0.
05
YXXXX
Notes:
10.
Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.
11.
A capacitor of value 0.1 µF or higher between Vdd and GND is required.
0.90
±
0.10
2.
6
1.
1
3.81
2.0
Rev. 1.03
Page 12 of 13
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SiT8008B
Low Power Programmable Oscillator
The Smart Timing Choice
Ordering Information
The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime Part Number
Generator.
Table 13. Ordering Codes for Supported Tape & Reel Packi ng Method
Device Size
(mm x mm)
16 mm T&R (3ku)
16 mm T&R (1ku)
12 mm T&R (3ku)
12 mm T&R (1ku)
8 mm T&R (3ku)
8 mm T&R (1ku)
2.0 x 1.6
–
–
–
–
D
E
2.5 x 2.0
–
–
–
–
D
E
3.2 x 2.5
–
–
–
–
D
E
5.0 x 3.2
–
–
T
Y
–
–
7.0 x 5.0
T
Y
–
–
–
–
Packing Method
“T”: 12/16 mm Tape & Reel, 3ku reel
“Y”: 12/16 mm Tape & Reel, 1ku reel
“D”: 8 mm Tape & Reel, 3ku reel
“E”: 8 mm Tape & Reel, 1ku reel
Blank for Bulk
Frequency
1.000000 to 110.000000 MHz
Feature Pin
“E” for Output Enable
“S” for Standby
“N” for No Connect
Supply Voltage
“18” for 1.8V ±10%
“25” for 2.5V ±10%
“28” for 2.8V ±10%
“30” for 3.0V ±10%
“33” for 3.3V ±10%
“XX” for 2.5V -10% to 3.3V +10%
Part Fa m il y
“SiT8008”
Revision Letter
“B” is the revision
Temperature Range
“C” Commercial, -
20ºC to 70ºC
“I” Industrial, -40ºC to 85ºC
Output Drive Strength
“–” Default (datasheet limits)
See Tables 1 to 5 for rise/fall
times
“L” “T”
“A” “E”
“R” “U”
“B” “F”
Package Size
“7” 2.0 x 1.6 mm
“1” 2.5 x 2.0 mm
“2” 3.2 x 2.5 mm
“3” 5.0 x 3.2 mm
“8” 7.0 x 5.0 mm
Frequenc y Stabili ty
“1” for ±20 ppm
“2” for ±25 ppm
“3” for ±50 ppm
SiT8008BC-12-18E-66.666660D
Rev. 1.03
Page 13 of 13
www.sitime.com
SiT8008B
Low Power Programmable Oscillator
The Smart Timing Choice
Table 14. Addi ti ona l Inf or mation
Document Description Download Link
Time Machine II MEMS oscillator programmer http://www.sitime.com/support/time-machine-oscillator-programmer
Field
Programmable
Oscillators
Devices that can be
programmable in the field
by Time Machine II
http://www.sitime.com/products/field-programmable-oscillators
Manufacturing
Notes Tape & Reel dimension,
reflow profile and other
manufacturing related info
http://www.sitime.com/component/docman/doc_download/243-manufacturing-notes-for-sitime-oscillators
Qualification
Reports RoHS report, reliability
reports, composition reports http://www.sitime.com/support/quality-and-reliability
Performance
Reports
Additional performance data
such as phase noise, current
consumption and jitter for
selected frequencies
http://www.sitime.com/support/performance-measurement-report
Termination
Techniques
Termination design
recommendations
http://www.sitime.com/support/application-notes
Layout Techniques
Layout recommendations http://www.sitime.com/support/application-notes
Revision History
Table 15. Datasheet Version and Change Log
Version Release Date Change Summ a ry
1.0 6/10/14 First Production Release
1.01 5/07/15
•
Revised the Electrical Characteristics, Timing Diagrams and Performance Plots
•
Revised 2016 package diagram
1.02 6/18/15
•
Added 16 mm T&R information t o Table 13
•
Revised 12 mm T&R information to Table 13
1.03
8/30/16
•
Revised part number example in the ordering information
© SiTime Corporation 2015. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a
Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii)
unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper
installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specif ically disclaims any and all express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or
usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by
SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved
or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.
CRITICAL USE EXCLUSION POLICY
BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES
OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.
SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products
does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the
sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly
prohibited.
The Smart Timing Choice
SiTime Corporation
990 Almanor Avenue, Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Supplemental Information
The Supplemental Information section is not part of the datasheet and is for informational purposes only.
The Smart Timing Choice
Silicon MEMS Outperforms Quartz
SiTime Corporation 990 Almanor Aven ue, Sunnyvale, CA 94085 (408) 328-4400
www.sitime.com
Silicon MEMS Outperf orms Quartz Rev. 1.1
Revised October 5, 2013
Silicon MEMS Outperforms Quartz
The Smart Timing Choice
Silicon MEMS Outperf orms Quartz Rev. 1.1
www.sitime.com
Best Reliability
Silicon is inherently more reliable than quartz. Unlike quartz
suppliers, SiTime has in-house MEMS and analog CMOS
expertise, which allows SiTime to develop the most reliable
products. Figure 1 shows a comparison with quartz
technology.
Why is SiTi me Best in Class:
• SiTime’s MEMS resonat ors are vacuum sealed using an
advanced EpiSeal™ process, which eliminates foreign par-
ticles and improves long term aging and reliability
• World-class MEMS and CMOS design expertise
Figure 1. Reliability Comparison[1]
Best Aging
Unlike quartz, MEMS oscillators have excellent long term
aging performance which is why every new SiTime product
specifies 10-year aging. A comparison is shown in Figure 2.
Why is SiTi me Best in Class:
• SiTime’s MEMS resonators are vacuum se aled using an
advanced EpiSeal process, which eliminates foreign parti-
cles and impro ves long term aging and reliability
• Inherently better immunity of electrostatically driven
MEMS resonator
Figure 2. Aging Comparison[2]
Best Electro Magnetic Susceptibility (EMS)
SiTime’s oscillators in plastic packages are up to 54 times
more immune to external electr omagnetic fields than quartz
oscillators as shown in Figur e 3.
Why is SiTi me Best in Class:
• Internal differential architecture for best common mode
noise rejection
• Electrostatically driven MEMS resonator is more immune
to EMS
Figure 3. Electro Magnetic Suscep tibility (EMS )[3]
Best Power Supply Noise Rejection
SiTime’s MEMS oscillators are more resilient against noise on
the power supply. A comparison i s shown in Figure 4.
Why is SiTi me Best in Class:
• On-chip regulators and internal differential architecture for
common mode noi s e rejection
• Best analog CMOS design expertise
Figure 4. Power Supply Noise Rejection[4]
Mean Time Between Failure (Million Hours)
SiTime
500
IDT (Fox)
38
SiTime
20X Better
Epson
28
TXC 16
Pericom 14
0
200
400
600
SiTime MEMS vs. Quar tz Aging
SiTime MEMS Oscillator Quartz Oscillator
10
8
8.0
6
SiTime
2X Better
4
3.0
3.5
2
1.5
0
1-Year
10-Year
- 30
SiTime vs Quartz
Electro Magnetic Susceptibility (EMS)
- 39
- 40
- 40
- 42
- 43
- 45
- 50
- 60
SiTime
54X Better
- 70
- 73
- 80
- 90
Kyocera Epson
TXC
CW
SiLabs SiTime
SiTIme NDK Epson Kyocera
Power Supply Noise Rejection
5.0
4.0
3.0
2.0
1.0
SiTime
3X Better
0.0
10
100
1,000
10,000
Power Supply Noise Frequency (kHz)
Aging
(±PPM)
Additive
Integrated
Phase
Jitter
per
mVp-p
Injected
Noise
(ps/mv
)
Average
Spurs
(dB)
Silicon MEMS Outperforms Quartz
The Smart Timing Choice
Silicon MEMS Outperf orms Quartz Rev. 1.1
www.sitime.com
Best Vibration Robustness
High-vibration environments are all around us. All electronics,
from handheld devices to enterprise servers and storage
systems are subject to vibration. Figure 5 shows a comparison
of vibration robustness.
Why is SiTi me Best in Class:
• The moving mass of SiTime’s MEMS resonators is up to
3000 times small er than quartz
• Center-anchored MEMS res onator is the mos t robust
design
Figure 5. Vibration Robustness[5]
Best Shock Robustness
SiTime’s oscillators can withstand at least 50,000 g shock.
They all maintain their electrical performance in operation
during shock events. A comparison with quartz devices is
shown in Figur e 6.
Why is SiTi me Best in Class:
• The moving mass of SiTime’s MEMS resonators is up to
3000 times small er than quartz
• Center-anchored MEMS res onator is the mos t robust
design
Figure 6. Shock Robustness[6]
Notes:
1.
Data Source: Reliability documents of named companies.
2.
Data source: SiTime and quartz oscillator devices datasheets.
3.
Test conditions for Electro Magnetic Susceptibility (EMS):
•
According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
•
Field strength: 3V/m
•
Radiated signal modulation: AM 1 kHz at 80% depth
•
Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
•
Antenna polarization: Vertical
•
DUT position: Center aligned to antenna
Devices used in this test:
SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz
Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz
TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz
Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz
Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz
SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz
4.
50 mV pk-pk Sinusoidal voltage.
Devices used in this test:
SiTime, SiT8208AI-33-33E-25. 00000 0, MEMS based - 25 MHz
NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz
Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz
Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz
5.
Devices used in this test: same as EMS test stated in Note 3.
6.
Test conditions for shock test:
•
MIL-STD-883F Method 2002
•
Condition A: half sine wave shock pulse, 500-g, 1ms
•
Continuous frequency measurement in 100 μs gate time for 10 seconds
Devices used in this test: same as EMS test stated in Note 3
7.
Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com.
SiTime TXC Epson Connor Winfield Kyocera SiLabs
Vibration Sensitivityvs. Frequency
100.00
10.00
1.00
SiTime
Up
to
30x
Better
0.10
10
100
Vibration Frequency(Hz)
1000
16
Differential XO Shock Robustness - 500 g
14
12
10
8
6
4
2
0
Kyocera Epson
TXC
CW
SiLabs SiTime
14.3
12.6
3.9
SiTime
Up
to
25x
Better
2.9
2.5
0.6
Vibration
Sensitivity
(ppb/g)
Peak
Frequency
Deviation
(PPM)
Document Feedback Form
The Smart Timing Choice
Feedback Form Rev. 1.0
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SiTime values your input in im proving our docum entation. Click here for our onl ine feedback form or fill out and email the form
below to productsupport@sitime.com.
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2. Is the organization of this document easy to follow? Yes No
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3. Is there any application specific information that you would like to see in this document? (Check all that apply)
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If “Other,” please specify:
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