© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 12
1Publication Order Number:
DTC114EET1/D
DTC114EET1 Series,
SDTC114EET1 Series
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base−emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC−75/SOT−416 package which is designed for low power surface
mount applications.
Features
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•The SC−75/SOT−416 Package Can be Soldered Using Wave or
Reflow
•The Modified Gull−Winged Leads Absorb Thermal Stress During
Soldering Eliminating the Possibility of Damage to the Die
•Pb−Free Packages are Available
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC100 mAdc
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Total Device Dissipation,
FR−4 Board (Note 1) @ TA = 25°C
Derate above 25°C
PD
200
1.6
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
RqJA 600 °C/W
Total Device Dissipation,
FR−4 Board (Note 2) @ TA = 25°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
RqJA 400 °C/W
Junction and Storage Temperature
Range
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
NPN SILICON
BIAS RESISTOR TRANSISTORS
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
SC−75 (SOT−416)
CASE 463
STYLE 1
3
2
1
MARKING DIAGRAM
xx M G
G
xx = Specific Device Code
xx = (Refer to page 2)
M = Date Code*
G=Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
DTC114EET1 Series, SDTC114EET1 Series
http://onsemi.com
2
ORDERING INFORMATION, DEVICE MARKING and RESISTOR VALUES
Device Marking R1 (K) R2 (K) Package Shipping†
DTC114EET1
8A 10 10
SC−75/SOT−416 3000 Tape & Reel
DTC114EET1G SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
SDTC114EET1G
DTC124EET1
8B 22 22
SC−75/SOT−416 3000 Tape & Reel
DTC124EET1G SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
SDTC124EET1G
DTC144EET1
8C 47 47
SC−75/SOT−416 3000 Tape & Reel
DTC144EET1G SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
DTC114YET1
8D 10 47
SC−75/SOT−416 3000 Tape & Reel
DTC114YET1G SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
SDTC114YET1G
DTC114TET1
94 10 ∞
SC−75/SOT−416 3000 Tape & Reel
DTC114TET1G SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
DTC143TET1
8F 4.7 ∞
SC−75/SOT−416 3000 Tape & Reel
DTC143TET1G SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
DTC123EET1
8H 2.2 2.2
SC−75/SOT−416 3000 Tape & Reel
DTC123EET1G SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
DTC143EET1
8J 4.7 4.7
SC−75/SOT−416 3000 Tape & Reel
DTC143EET1G SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
DTC143ZET1
8K 4.7 47
SC−75/SOT−416 3000 Tape & Reel
DTC143ZET1G SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
DTC124XET1
8L 22 47
SC−75/SOT−416 3000 Tape & Reel
DTC124XET1G SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
DTC123JET1
8M 2.2 47
SC−75/SOT−416 3000 Tape & Reel
DTC123JET1G SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
DTC115EET1
8N 100 100
SC−75/SOT−416 3000 Tape & Reel
DTC115EET1G SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
DTC144WET1
8P 47 22
SC−75/SOT−416 3000 Tape & Reel
DTC144WET1G SC−75/SOT−416 3000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
DTC114EET1 Series, SDTC114EET1 Series
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3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc
Emitter−Base Cutoff Current DTC114EET1, SDTC114EET1
(VEB = 6.0 V, IC = 0) DTC124EET1, SDTC124EET1
DTC144EET1
DTC114YET1, SDTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC115EET1
DTC144WET1
IEBO −
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO 50 − − Vdc
ON CHARACTERISTICS (Note 3)
DC Current Gain DTC114EET1, SDTC114EET1
(VCE = 10 V, IC = 5.0 mA) DTC124EET1, SDTC124EET1
DTC144EET1
DTC114YET1, SDTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC115EET1
DTC144WET1
hFE 35
60
80
80
160
160
8.0
15
80
80
80
80
80
60
100
140
140
350
350
15
30
200
150
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) DTC123EET1
(IC = 10 mA, IB = 1 mA) DTC143TET1/DTC114TET1/
DTC143EET1/DTC143ZET1/DTC124XET1
VCE(sat) − − 0.25 Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
DTC114EET1, SDTC114EET1
DTC124EET1, SDTC124EET1
DTC114YET1, SDTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) DTC144EET1
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) DTC115EET1
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) DTC144WET1
VOL
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) DTC143TET1
DTC143ZET1
DTC114TET1
VOH 4.9 − − Vdc
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
DTC114EET1 Series, SDTC114EET1 Series
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4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
Input Resistor SDTC114EET1, SDTC114ET1
DTC124EET1, SDTC124EET1
DTC144EET1
DTC114YET1, SDTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC115EET1
DTC144WET1
R1 7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
kW
Resistor Ratio DTC114EET1/SDTC114EET1/DTC115EET1
DTC124EET1/SDTC124EET1/DTC144EET1
DTC114YET1/SDTC114YET1
DTC143TET1/DTC114TET1
DTC123EET1/DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC144WET1D
R1/R2
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
Figure 1. Derating Curve
250
200
150
100
50
0
-50 0 50 100 150
TA, AMBIENT TEMPERATURE (°C)
PD, POWER DISSIPATION (MILLIWATTS)
RqJA = 600°C/W
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
t, TIME (s)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 2. Normalized Thermal Response
DTC114EET1 Series, SDTC114EET1 Series
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5
TYPICAL ELECTRICAL CHARACTERISTICS − DTC114EET1, SDTC114EET1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 3. VCE(sat) versus IC
1002030
IC, COLLECTOR CURRENT (mA)
10
1
0.1
TA=-25°C
75°C
25°C
40 50
Figure 4. DC Current Gain
Figure 5. Output Capacitance
1
0.1
0.01
0.001 020 4050
IC, COLLECTOR CURRENT (mA)
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
TA=-25°C
25°C
Figure 6. Output Current versus Input Voltage
75°C
25°C
TA=-25°C
100
10
1
0.1
0.01
0.001 01 234
Vin, INPUT VOLTAGE (VOLTS)
56 78 910
Figure 7. Input Voltage versus Output Current
50
010203040
4
3
1
2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
75°C
VCE = 10 V
f = 1 MHz
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
DTC114EET1 Series, SDTC114EET1 Series
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6
TYPICAL ELECTRICAL CHARACTERISTICS − DTC123EET1
75°C
25°C
−25°C
Figure 8. VCE(sat) versus ICFigure 9. DC Current Gain
Figure 10. Output Capacitance Figure 11. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 12. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
4.5
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
3.5
3
2.5
f = 1 MHz
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
VCE = 10 V
DTC114EET1 Series, SDTC114EET1 Series
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7
TYPICAL ELECTRICAL CHARACTERISTICS − DTC124EET1, SDTC124EET1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 13. VCE(sat) versus ICFigure 14. DC Current Gain
Figure 15. Output Capacitance Figure 16. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
101 100
75°C 25°C
100
0
Vin, INPUT VOLTAGE (VOLTS)
10
1
0.1
0.01
0.001 246810
TA=-25°C
0
IC, COLLECTOR CURRENT (mA)
100
TA=-25°C
75°C
10
1
0.1 10 20 30 40 50
25°C
Figure 17. Input Voltage versus Output
Current
0.001
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS
)
TA=-25°C
75°C
25°C
0.01
0.1
1
40
IC, COLLECTOR CURRENT (mA)
020 50
50
0 10 203040
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC/IB = 10 VCE = 10 V
f = 1 MHz
TA = 25°C
VO = 5 V
VO = 0.2 V
DTC114EET1 Series, SDTC114EET1 Series
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8
TYPICAL ELECTRICAL CHARACTERISTICS − DTC144EET1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 18. VCE(sat) versus IC
0246810
100
10
1
0.1
0.01
0.001
Vin, INPUT VOLTAGE (VOLTS)
TA=-25°C
75°C25°C
Figure 19. DC Current Gain
Figure 20. Output Capacitance
100
10
1
0.1
010 203040 50
IC, COLLECTOR CURRENT (mA)
Figure 21. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
10 1 100
25°C
75°C
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
Figure 22. Input Voltage versus Output Current
020 40 50
10
1
0.1
0.01
IC, COLLECTOR CURRENT (mA)
25°C
75°C
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS
)
VCE = 10 V
f = 1 MHz
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
TA=-25°C
TA=-25°C
DTC114EET1 Series, SDTC114EET1 Series
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9
TYPICAL ELECTRICAL CHARACTERISTICS − DTC114YET1, SDTC114YET1
10
1
0.1 01020304050
100
10
10246810
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8 10 1520 2530 3540 4550
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 23. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
0 20406080
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 24. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 25. Output Capacitance Figure 26. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
Figure 27. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25°C
25°C
TA=75°C
VCE = 10
300
250
200
150
100
50
02468 1520405060708090
f = 1 MHz
TA = 25°C
25°C
IC/IB = 10 TA=-25°C
TA=75°C25°C
-25°C
VO = 0.2 V TA=-25°C
75°C
VO = 5 V
25°C
75°C
DTC114EET1 Series, SDTC114EET1 Series
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10
TYPICAL ELECTRICAL CHARACTERISTICS − DTC123JET1G
75°C
25°C
−25°C
Figure 28. VCE(sat) versus ICFigure 29. DC Current Gain
Figure 30. Output Capacitance Figure 31. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 32. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100
IC, COLLECTOR CURRENT (mA)
100101
1000
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°CTA = −25°C
0.01
3525155
0.01
0.1
30
3.5
3
2.5
100
4.5
f = 1 MHz
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
DTC114EET1 Series, SDTC114EET1 Series
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11
TYPICAL ELECTRICAL CHARACTERISTICS − DTC143ZET1
−55°C
150°C
Figure 33. VCE(sat) versus ICFigure 34. DC Current Gain
Figure 35. Output Capacitance Figure 36. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (V)
VR, REVERSE BIAS VOLTAGE (V)
Figure 37. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
45 50403020100
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
Vin, INPUT VOLTAGE (V)
3525155
f = 1 MHz
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
TA = 25°C
1
0.1
0.01
1 10 100
1
0.1
0.01
1 10 100
−55°C
150°C
TA = 25°C
4
3
2
1
0
TA = 25°C
−55°C
150°C
01 423
100
10
1
0.1
0.01
0.001
TA = 25°C
−55°C
150°C
10
1
0.1
50403020100
DTC114EET1 Series, SDTC114EET1 Series
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12
TYPICAL APPLICATIONS FOR NPN BRTs
LOAD
+12 V
Figure 38. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
IN
OUT
VCC
ISOLATED
LOAD
FROM mP OR
OTHER LOGIC
+12 V
Figure 39. Open Collector Inverter:
Inverts the Input Signal
Figure 40. Inexpensive, Unregulated Current Source
DTC114EET1 Series, SDTC114EET1 Series
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13
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE F
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) D
−E−
−D−
b
e
3 PL
0.20 (0.008) E
C
L
A
A1
3
2
1
HE
DIM MIN NOM MAX
MILLIMETERS
A0.70 0.80 0.90
A1 0.00 0.05 0.10
b
C0.10 0.15 0.25
D1.55 1.60 1.65
E
e1.00 BSC
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.059 0.063 0.067
0.04 BSC
MIN NOM MAX
INCHES
0.15 0.20 0.30 0.006 0.008 0.012
HE
L0.10 0.15 0.20
1.50 1.60 1.70
0.004 0.006 0.008
0.061 0.063 0.065
0.70 0.80 0.90 0.027 0.031 0.035
0.787
0.031
0.508
0.020 1.000
0.039
ǒmm
inchesǓ
SCALE 10:1
0.356
0.014
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.803
0.071
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