@ HARRIS 2N6851 Avalanche-Energy-Rated August 1991 P-Channel Power MOSFETs Features Package -4.0A, -200V TO-205AF BOTTOM VIEW * 'DS(on) = 0.802 . GATE * Single Pulse Avalanche Energy Rated SOURCE * SOA is Power-Dissipation Limited Nanosecond Switching Speeds DRAIN * Linear Transfer Characteristics (CASE) High Input Impedance Description The 2N6851 is an advanced power MOSFET designed, tested, and | Terminal Diagram guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. This is a p-channel enhancement- P-CHANNEL ENHANCEMENT MODE mode silicon-gate power field-effect transistor designed for applications such as switching regulators, switching converters, D motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and tow gate-drive power. This type can be operated directly from integrated circuits. The 2N6851 is supplied in the JEDEC TO-205AF (Low Profile G TO-39) metal package. fi gu a Zo <= = of a. (o) a. Absolute Maximum Ratings (Tc = +25C) Unless Otherwise Specified 2N6851 UNITS Drain-Source Voltage ..... 2... ccc cece nen ate reece eeerere -200* Drain-Gate Voltage (R@g = 20K)... 0... ee eee eee -200* Continuous Drain Current To 2 +2596 occ cnet eee eee -4.0* TG = F100 cece cece cnet enna eees ~2.4* Pulsed Drain Current (Note 2) .. 20.0... . 0c cece ev ee ues -20* Gate-Source Voltage 2.0... ccc ccc cece ete cece ate te eeeatetsene +20* Maximum Power Dissipation To = +259C (See Figure 14)... cece cece cnet e eee e eet eeenes 25* Ww Above Tg = +259C, Derate Linearly (See Figure 14) .. 0.2* wc Single Pulse Avalanche Energy (Note 3) ............... 500 mJ Operating and Storage Junction Temperature Range. . . -55 to +150* 9 Maximum Lead Temperature for Soldering ..............0000eeeeeeees 300 9G (0.063" (1.6mm) from case for 10s) << <> >> NOTES: *JEDEC registered values o . Pulse Test: Pulse width < 300ys, Duty Cycle < 2%. nN . Repetitive Rating: Pulse width limited by maximum junction temperature, See Transient Thermal Impedance Curve (Figure 5). . Vop = SOV, Starling Ty = 25C, L = 46.9mH, Rg = 252, Peak I = 4.0A, {See Figure 15 and 16). wo CAUTION: These devices are sensitive to electrostatic discharge. Proper I.C. handling procedures should be follawed. File Number 291 8 Copyright Harris Corporation 1991 5-13Specifications 2N6851 Electrical Characteristics @ tc = 25C (Uniess Otherwise Specitied) Parameter Min. Typ. Max Units Test Conditions BVpgg _ Drain-Source Braakdown Voltage 200 = jy ov Ves = OV. Ip = 1.0mA Vesith) Gate Threshold Voltage -2.0 _ -4.0 v Vos = Ves. '!p = -0.25mA less Gate-Source Leakage Forward - = 100 nA Veg = -20V lass Gate-Source Leakage Reverse _ - 100 nA Vgg = 20v loss Zero Gate Voltage Drain Current =~ _ -0.25 HA Vos = Max. Rating, Vag = OV - ~_ - 1000 yA Vos = Max. Rating x 0.8, Vgg = OV, To = 125C Vpston) OrrState Drain Voltage _ _ -3.3 v Vos > '!pion) * Rogon) max., @S = ~10V. Ip = -4.0A Rosion) Static Drain-Source On-State =- 0.80" Q Ves = -10V, Ip = -2.4A Resistance Sts Forward Transconductance 2.2 3.5 -6.6 So) Vos = -5V = Rogionjmax. 'p = - 2.44 Ciss input Capacitance 400 550 _ pF Vas = OV, Vpg = -25V. i = 1.0 MHz Cass- Output Capacitance 50 170 _ pF See Fig. 10 Crsg Reverse Transfer Capacitance 40 50 _ pF taton) Turn-On Delay Time _ 30 50 ns Vpo = -95V. Ip = -2.4A,2Z_ = 500 tr Rise Time _ 50 100 ns See Fig. 17 ta(ott) Turn-Off Delay Time _ 50 80 ns Moser switching limes are essentially 1 Fall Time = 40 30 a independent of operating temperature.) Qg Total Gate Charge - 31 45 nc Ves = 15V, Ip = 8.0A, Vog = 0.8 Max. Rating (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is essentially f operating temperature. Oye Gate-Source Charge = 18 23 AG independent of operating perature.) Qga Gate-Drain (Miller) Charge - 13 22 nc Lp Internal Drain Inductance _ 5.0 _ nH Measured from the Modified MOSFET drain lead, 5mm symbol showing the {0.2 in.) from header internal device D to canter of die. inductances Lo Lg Internal Source Inductance _ 18 = nH Measured from the source lead, 5 mm G (0.2 in.) trom header \_'S to source bonding pad. s Thermal Resistance RBI Juncticn-to-Case _ _ 5.0" C/W Rea Junction-to-Ambient _ - 175 C/W Typical socket mount Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions a Ig Continuous Source Current _ -4.0 A Modified MOSFET symbol (Body Diode) showing the integral reverse P-N junction rectifier. G Igu Pulse Source Current (Body Diode) - -20 A s Vgp __ Diode Forward Voltage _ 1.5 v To = 28C, Ig = -4.0A, Vag = 0V ter Reverse Recovery Time _ - 400 ns Ty = 25C, Ip = -4.0A, dip/dt = -100 A/ps Qrar Reverse Recovered Charge _ 26 -_ HC Ty = 25C, Ip = 4.0A, digidt = -100 A/us ton Forward Turn-on Time intrinsic turn-on time is negligible. Turn-on speed is substantially controtied by Lg + Lp. JEDEC Registered Value @ Pulse Test: Pulse width = 300us, Duty Cycle = 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal !mpedance Curve (Fig. 5). 5-14 @ Von = SOV, starting Ty = 25C. L = 46.9 mH, Re = 252, Peak |, = 4.0A. (See Fig. 15 and 16)2N6851 ~15 T T 80 us PULSE TEST | Yps > Ipjen) * Ros(on)MAX. a 80 4s PULSE TEST @-12t dL . @ = : \ i yw -1 w Jowf 2 fu Tys-s8 2 z | Y f -gf- 4. tt Ty = 28C 5 b FA Zz | < Poot ~Ty= 125C 5 5 3 -6h--+ - - --- 2 z a }. | C4 1 5 5 2 _=5v 6 34 + t i v ! Q 10 =20 -30 -40 -50 =2 ~4 =6 Vps, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vqg. GATE-TO-SQURCE VOLTAGE (VOLTS) 92cs-43308 9268-43209 Fig. 1 - Typical Output Characteristics Fig. 2- Typical Transfer Characteristics + . OPERA 80 ps PULSE TEST IS LIMITED BY Rosjon) = a g ra - N. a = < < ha E 5 z a W rrr a wy ra x =z wn 2 oO 2 .7] a g z t= z a r < x ec a 8 Ow ~ 6 6 a. 3 a -2 -4 -6 -8 =10 -1.0 ~10 ~100 Vps. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) 9208-43310 G2CS-a44t Fig. 3- Typical Saturation Characteristics Fig. 4 - Maximum Safe Operating Area a Ww 5 a < = x 3 z 1. DUTY FACTOR. D = ty/t2 2. PER UNIT BASE = Agic SINGLE PULSE = 5.0 DEG. C/W. THERMAL (MPEDANCE) 3. Tym - Teo = Pom+ 2 2 5 2 5 2 5 2 5 107-5 1o74 1973 197-2 10-1 1.0 10 t,, SQUARE WAVE PULSE DURATION (SECONDS) 9 a ZQyctt) EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) v 920M. 43292 Fig. 5 - Maximum Effective Transient Thermal impedance, Junction-to-Case Vs. Pulse Duration2N6851 80 wS PULSE TEST Vos > Ipjan) x Rosion) max. (SIEMENS) w 2 3 Ty=~-55C ! Ty= 25C Ty = 125C 6 -9 -12 tp, DRAIN CURRENT {AMPERES) 9208-43312 Fig. 6 - Typical Transconductance Vs. Drain Current VOLTAGE (NORMALIZED) z 2 3 a x < w o uw Q = > S$ a S E z a 3 R o So > a ~40 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) 9208-43294 Fig. 8 - Breakdown Voltage Vs. Temperature 2000] Veg =0 ' =1 MHz 4+. --. - | 1600 t 4 Ciss = Cgx + Cgg. Cag SHORTED < Crss = Cga ce. c - w _ gs od 1200 Coss =Caos+ ogc 4 g O53 Is Cos + Coa = { Cys + Cog 4 g : @ 800 + \ Py Ciss o N t | 400 t L Coss Cres o ~10 =20 =30 40 -50 Vps. DRAIN-TO-SOURCE VOLTAGE (VOLTS) 92Cs-a3414 Fig. 10 - Typical Capacitance Vs. Drain-to-Source Voltage a w x w a = < bE z wa c > 9 z = a ws a rc w > w r a -0.4 -0.6 ~0.8 -1.0 -1.2 1.4 1.6 1.8 Vgp. SOURCE-TO-DRAIN VOLTAGE (VOLTS) 9208-43270 Fig. 7 - Typical Source-Drain Diode Forward Voltage ww 28 r oO g |_ < & ooh | | Lf w c 5a | a ww 1.5 gy | Da | - os On 69 1.0 Fz ' z~ aa < os 2 os _| | e & g |. | g rT = Q i =40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) 9208-43313 Fig. 9 - Normalized On-Resistance Vs. Temperature Ip =-@A FOR TEST CIRCUIT SEE FIGURE 18 iy t a \ l wo t y 3 Vgs. GATE-TO-SOURCE VOLTAGE (VOLTS) -25 24 32 40 Qg, TOTAL GATE CHARGE (nC) 9208-43315. Fig. 11 - Typical Gate Charge Vs. Gate-to-Source Voltage2N6851 zi. Aipsion) MEASURED WITH CURRENT PULSE OF 2.0 uS DURATION. INITIAL Ty = 25 C. (HEATING EFFECT OF 2.0 uS PULSE IS MINIMAL) a w 1.6 a oO / & ac-~ a 28 a 5: =z aT < 9 9 1-2-~- e bw i z zo |. oo Vag =-10V wu gs A 3 9@ 0@;---7+ oo inmate o - 2a z su et rT Zz az Vg = -20V oO 04 i a - i ~ Tr 0 =5 =10 =15 =20 =25 (p. DRAIN CURRENT (AMPERES) Tc, CASE TEMPERATURE (C) 9208-43316 9208-43317 Fig. 12 - Typical On-Resistance Vs. Drain Current Fig. 13 - Maximum Drain Current Vs. Case Temperature bow Vgg=-10 VARY tp TO OBTAIN REQUIRED PEAK j,_ 92CS-43276 Fig. 15 - Unclamped inductive Test Circuit e 4 = z Q = < a a g 6 w = o a a a ah ww & z <3 rc Qw a. 5 a 20 40~60 140 160 Tc, CASE TEMPERATURE (C) 9208-43300 Fig. 14 - Power Vs. Temperature Derating Curve 8Voss 9208-43270 Fig. 16 - Unclamped Inductive Waveforms ~Vos O ISOLATED CURRENT SUPPLY REGULATOR o PULSE WIDTH +} COMPLEMENT wv > BATTERY 4. YGS (ON) +10 (NPUT 50 % 10% VGs (OFF) OV INPUT PULSE RISE TIME INPUT PULSE FALL TIME 1g (on) te tg (ott) ty a a VDS (OFF) 10% 30 1. % LJ OuTPUT i he i, O+Vps Vos (on) ___ 20. 10% CURRENT CURRENT SAMPLING SAMPLING 9208-43306 RESISTOR RESISTOR 9208-43307 Fig. 17 - Switching Time Test Circuit Fig. 18 - Gate Charge Test Circuit