NTE56051 & NTE56052
TRIAC, 8A Low Logic Level
Description:
The NTE56051 and NTE56052 are glass passivated, Low Logic Level TRIACs in a T O220 type pack-
age designed for use in general purpose bidirectional switching and phase control applications.
These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits, and
other low power gate trigger circuits.
Absolute Maximum Ratings:
Repetitive Peak Off–Sate Voltage (Note 1), VDRM
NTE56051 500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE56052 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (Full Sine Wave, TMB ≤ 102°C), IT(RMS) 8A. . . . . . . . . . . . . . . . . . . . . . . . . .
Non–Repetitive Peak On–State Current, ITSM
(Full Sine Wave, TJ = +125°C prior to Surge, with Reapplied VDRMmax)
t = 20ms 55A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
t = 16.7ms 60A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I2t for Fusing (t = 10ms), I2t 15A2sec. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
(ITM = 12A, IG = 0.2A, dIG/dt = 0.2A/µs)
MT2 (+), G (+) 50A/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MT2 (+), G (–) 50A/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MT2 (–), G (–) 50A/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MT2 (–), G (+) 10A/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Current, IGM 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Voltage, VGM 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Power, PGM 5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power (Over Any 20ms Period), PG(AV) 500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Mounting Base, RthJMB
Full Cycle 2.0K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Half Cycle 2.4K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, Junction–to–Ambient, RthJA 60K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Although no t recommended, of f–state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the on–State. The rate–of–rise of current should not exceed
6A/µs.
Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
Gate Trigger Current
MT2 (+), G (+) IGT VD = 12V, IT = 0.1A –2.5 5 mA
MT2 (+), G (–)–3.5 5 mA
MT2 (–), G (–)–3.5 5 mA
MT2 (–), G (+) –6.5 10 mA
Latching Current
MT2 (+), G (+) ILVD = 12V, IT = 0.1A –1.6 15 mA
MT2 (+), G (–)–8.5 20 mA
MT2 (–), G (–)–1.2 15 mA
MT2 (–), G (+) –2.5 20 mA
Holding Current IHVD = 12V, IT = 0.1A –1.5 10 mA
On–State Voltage VTIT = 5A –1.4 1.7 V
Gate Trigger Voltage VGT VD = 12V, IT = 0.1A –0.7 1.5 V
VD = 400V, IT = 0.1A, TJ = +125°C 0.25 0.4 –V
Off–State Leakage Current IDVD = VDRMmax, TJ = +125°C–0.1 0.5 mA
Dynamic Characteristics
Critical Rate–of–Rise of
Off–State Voltage dVD/dt VDM = 67% VDRMmax, TJ = +125°C,
Exponential Waveform, RGK = 1kΩ–5–V/µs
Gate Controlled Turn–On Time tgt ITM = 12A, VD = VDRMmax, IG = 0.1A,
dIG/dt = 5A/µs–2–µs
.420 (10.67)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.250 (6.35)
Max
.147 (3.75)
Dia Max
MT2
.070 (1.78) Max
.100 (2.54)
MT1
MT2
Gate
.110 (2.79)
