IRF7805PbF
VDSS 30V
RDS(on) 11m
QOSS 36nC
Qg 31nC
QSW 11.5nC
IRF7805PbF
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make this device ideal
for high efficiency DC-DC Converters that power the
latest generation of mobile microprocessors.
The IRF7805PbF offers maximum efficiency for mobile
CPU core DC-DC converters.
N Channel Application Specific MOSFETs
Ideal for Mobile DC-DC Converters
Low Conduction Losses
Low Switching Losses
Lead-Free
1 2016-8-23
Symbol Parameter Max. Units
VDS Drain-Source Voltage 30
VGS Gate-to-Source Voltage ± 12
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 13
A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 10
IDM Pulsed Drain Current 100
PD @TA = 25°C Maximum Power Dissipation 2.5
W
PD @TA = 70°C Maximum Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
V
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
RJL Junction-to-Drain Lead ––– 20
RJA Junction-to-Ambient ––– 50
SO-8
IRF7805PbF
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
IRF7805PbF SO-8 Tape and Reel 4000 IRF7805PbF
G D S
Gate Drain Source
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
HEXFET® Chip-Set for DC-DC Converters
Devices Features
IRF7805PbF
2 2016-8-23
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 300µs; duty cycle 2%.
When mounted on 1" in square copper board, t < 10 sec.
Typ = measured - QOSS
R
is measured at TJ of approximately 90°C.
Devices are 100% tested to these parameters.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
RDS(on) Static Drain-to-Source On-Resistance ––– 9.2 11
mVGS = 4.5V, ID = 7.0A
VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
IDSS Drain-to-Source Leakage Current
––– ––– 70
µA
VDS = 30V, VGS = 0V
––– ––– 10 VDS = 24V, VGS = 0V
––– ––– 150 VDS = 24V,VGS = 0V,TJ = 100°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 22 31
nC
Qgs1 Pre -Vth Gate-to-Source Charge ––– 3.7 ––– VGS = 5.0V
Qgs2 Post-Vth Gate-to-Source Charge ––– 1.4 ––– VDS = 16V
Qgd Gate-to-Drain Charge ––– 6.8 ––– ID = 7.0A
Qsw Switch Charge (Qgs2 + Qgd) ––– 8.2 11.5
Qoss Output Charge ––– 30 36 nC VDS = 16V, VGS = 0V
RG Gate Resistance 0.5 ––– 1.7
td(on) Turn-On Delay Time ––– 16 –––
ns
VDD = 16V,VGS = 4.5V
tr Rise Time ––– 20 ––– ID = 7.0A
td(off) Turn-Off Delay Time ––– 38 ––– RG = 2
tf Fall Time ––– 16 ––– Resistive Load
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 2.5
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 106 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS = 7.0A,VGS = 0V
Qrr Reverse Recovery Charge ––– 88 –––
di/dt = 700A/µs
VDS =16V, VGS= 0V, IS= 7.0A
Qrr Reverse Recovery Charge ––– 55 –––
di/dt = 700A/µs (with 10BQ040)
VDS =16V, VGS= 0V, IS= 7.0A
nC
IRF7805PbF
3 2016-8-23
Fig. 2 Typical Gate Charge vs.
Gate-to-Source Voltage
Fig. 4 Typical Source-Drain Diode Forward Voltage
Fig. 1 Normalized On-Resistance
vs. Temperature
Fig 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
0.4 0.5 0.6 0.7 0.8 0.9
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
Fig. 3 Typical Rds(on) vs. Gate-to-Source Voltage
IRF7805PbF
4 2016-8-23
SO-8 Part Marking Information
SO-8 Package Outline (Dimensions are shown in millimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSIN C H ES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C AB
e1
A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
N O TES:
1. D IM EN SIO N IN G & TO LERAN C IN G PER ASM E Y14.5M -1994.
2. CONTROLLING DIM ENSION: MILLIMETER
3. DIM ENSIONS ARE SHOWN IN MILLIM ETERS [INCHES].
5 DIM ENSIO N D O ES NO T IN C LUD E M O LD PRO TRUSIO N S.
6 DIM ENSIO N D O ES NO T IN C LUD E M O LD PRO TRUSIO N S.
M O LD PRO TRU SIO N S N O T TO EXC EED 0.25 [.010].
7 D IM EN SIO N IS TH E LEN G TH O F LEAD FO R SO LD ERIN G TO
A S U B S T R A T E .
M O LD PRO TRU SIO N S N O T TO EXC EED 0.15 [.006].
8X 1.78 [.070]
DATE CODE (YWW)
XXXX
IN TE R N A TIO N A L
RECTIFIER
LOGO
F7101
Y = LAST D IG IT O F TH E YEAR
PART NUM BER
LOT CO DE
WW = WEEK
EXAM PLE: THIS IS AN IRF7101 (M OSFET)
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
A = ASSEM BLY SITE CODE
IRF7805PbF
5 2016-8-23
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
IRF7805PbF
6 2016-8-23
Qualification Information
Qualification Level
Moisture Sensitivity Level SO-8 MSL1
(per JEDEC J-STD-020D)†
RoHS Compliant Yes
Consumer
† Applicable version of JEDEC standard at the time of product release.
Revision History
Date Comments
08/23/2016
Changed datasheet with Infineon logo - all pages.
Corrected typo Qoss from typ/max “3.0nC/3.6nC” to “30nC/36nC” on page 2.
Added disclaimer on last page.
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™,
CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,
GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID
FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2016-04-19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
Document reference
ifx1
IMPORTANT NOTICE
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event be regarded as a guarantee of conditions or
characteristics (“Beschaenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
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without limitation warranties of non-infringement
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In addition, any information given in this
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completeness of the product information given in
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For further information on the product, technology,
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Please note that this product is not qualified
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of the Automotive Electronics Council.
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