©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
KSA1378
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
* PW≤10ms, Duty cycle≤50%
Electrical Characteristics Ta=25°C unless otherwise noted
* Pulse T est: PW≤350µs, Duty cycle≤2%
hFE Classification
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage -30 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
ICCollector Current (DC) -300 mA
ICP * Collector Current (Pulse) -500 mA
PCCollector Power Dissipation 300 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parame ter Test Condition Min. Typ. Max. Units
BVCBO Collect or-B ase Break down Voltage IC= -100µA, IE=0 -30 V
BVCEO Collect or-E mitter Break down Voltage IC= -10mA, IB=0 -25 V
BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 nA
ICBO Collector Cut-off Current VCB= -25V, IE=0 -100 mA
IEBO Emitter Cut-off Current VEB= -3V, IC=0 -100 nA
hFE * DC Current Gain VCE= -1V, IC= -50mA 70 400
VCE(sat) * Collector-Emitter Saturation V oltage IC= -300mA, IB= -30mA -0.35 -0.6 V
Classification O Y G
hFE 70 ~ 140 120 ~ 240 200 ~ 400
KSA1378
Low Frequency Power Amplifier
• Collector Power Dissipation : PC= 300mW
• Complement to KSC3488
1.Emitter 2. Collector 3. Base
TO-92S
1
©2001 Fairchild Semiconductor Corporation
KSA1378
Rev. A1, June 2001
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance
-0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
-20
-40
-60
-80
-100
-120
-140
-160
-180
-200
IB =-1.0mA
IB =-1.2mA
IB =-0.8mA
IB =-1.4mA
IB =-0.6mA
IB =-0.4mA
IB =-1.6mA
IB =-0.2mA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-1 -10 -100 -1000
10
100
1000
VCE = -1V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-1 -10 -100 -1000
-0.01
-0.1
-1
-10
Ic = 10 IB
V
CE
(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-1
-10
-100
-1000
VCE = -1V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100 -300
1
10
20
f = 1MH z
IE=0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR BASE VOLTAGE
4.00 ±0.20
3.72 ±0.20
2.86 ±0.20
2.31 ±0.20
3.70 ±0.20
0.77 ±0.10 14.47 ±0.30
(1.10)
0.49 ±0.10
1.27TYP
[1.27±0.20] [1.27±0.20]
1.27TYP
0.66 MAX.
0.35 +0.10
–0.05
TO-92S
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
KSA1378
Dimensions in Millimeters
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
©2001 Fairchild Semiconductor Corporation Rev. H3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Statu s Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor .
The datasheet is printed for reference information only.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET®
VCX™
STAR*POWE R is used under license
