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Item Symbol Ratings Unit Remarks
Drain-source voltage V DS 900
VDSX 900
Continuous drain current ID2.6
Pulsed drain current ID(puls] ±10.4
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR 2.6
Non-repetitive
Maximum avalanche energy EAS 349.1
Repetitive
Maximum avalanche energy E AR 9.0
Maximum drain-source dV/dt dVDS/dt 40
Peak diode recovery dV/dt dV/dt 5
Maximum power dissipation PD90
2.02
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3981-01 FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof High voltage
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=900V VGS=0V
VDS=720V VGS=0V
VGS=±30V
ID=1.3A VGS=10V
ID=1.3A VDS=25V
VCC=600V ID=1.3A
VGS=10V
RGS=10 Ω
V
V
µA
nA
Ω
S
pF
nC
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 1.389
62.0 °C/W
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=450V
ID=2.6A
VGS=10V
IF=2.6A VGS=0V Tch=25°C
IF=2.6A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
V
A
mJ
mJ
kV/µs
kV/µs
W
W
°C
°C
900
3.0 5.0
25
250
100
4.8 6.4
1.3 2.6
330 495
44 66
2.5 5.0
10.5 15.8
6.5 9.8
28 42
20 30
13 19.5
4.5 6.5
4.3 6.8
1.00 1.50
1.5
4.0
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super F AP-G Series 200511
=
<
VGS=-30V
Note *1
Note *2
Note *3
VDS 900V
Note *4
Tc=25°C
Ta=25°C
TO-220AB
Min. Typ. Max. Units
http://www.fujielectric.co.jp/fdt/scd/
=
<
=
<
Note *1 Tch 150°C
Note *2 Starting Tch=25°C, IAS=1.1A, L=524mH, VCC=100V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *4 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<=
<
=
<
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2
Characteristics
2SK3981-01(900V/2.6A/6.4Ω)FUJI POWER MOSFET
http://store.iiic.cc/
3
FUJI POWER MOSFET
2SK3981-01(900V/2.6A/6.4Ω)
http://store.iiic.cc/
4
FUJI POWER MOSFET
http://www.fujielectric.co.jp/fdt/scd/
2SK3981-01(900V/2.6A/6.4Ω)
http://store.iiic.cc/
