TOSHIBA {DISCRETE/OPTO} ? dePaoazesc oooy244 3 Tr i 9097250, TOSHIBA. (DISCRETE /OPTO) . , _.67C 09294 0 T-O3-09F 4 ffie ee Silicon Epitaxial Planar Type _ . { N 60 Diode 4 6 TENTATIVE Unit in mm COMMUNICATION AND INDUSTRIAL APPLICATIONS. te} [3 HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS. | 19 z 5 | a MAXIMUM RATINGS (Ta=25C) CHARACTERISTIC SYMBOL RATING UNIT 3 : Maximum (Peak) Reverse Voltage VRM 85 v a Reverse Voltage VR 70 Vv CATHODE MARK Maximum (Peak) Forward Current IE 600 mA 2 Average Forward Current Io 200 mA fas z Surge Current (1 4s) Ipsm 4 A a t Power Dissipation P 500 mW TEDEO : Bouse ; Junction Temperature Tj 200 c EIAS Be=40 Storage Temperature Range Tstg | ~65~ 200 C TOSHIBA 1-2A1A i Weight : 0.14g ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Breakdown Voltage VBR Ip=1002A 85 - - Vv VE(1) | Tp=Loo#A 0.54 |0.60 |0.66 v VE(2) | Ip=lmA 0.65 [0.71 [0.77 v Forward Voltage Vr(3) | IF=L0mA 0.74 [0.80 |0.86 Vv Ve(4) | Tr=100mA 0.79 {0.86 {0.92 yv VE(5) | Ip=200mA 0.86 |0.93 }1.00 Vv VF(6) | Ip=250mA - - 1.10 Vv IR(1) | Vp=50v - - | 100] ma Reverse Current Ip(2) | Va=50V, Ta=100C - - 25 HA In(3) | Vp=70V - - 250 na Total Capacitance Cy | Vp=0, =1MHz - - 2.5 pF trr(1) | Ip=Ip=10mA, Tyr=lmA - - 6 ns Reverse Recovery Time trr(2) TeeTa=10 ~200nA - - 4 ns Ipr=0.1lLIip tliat | ff] TOSHIBA CORPORATION 129