MITSUBISHI IGBT MODULES CM150DY-24H HIGH POWER SWITCHING USE INSULATED TYPE CM150DY-24H IC ................................................................... 150A VCES ......................................................... 1200V Insulated Type 2-elements in a pack UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 2 - 6.5 MOUNTING HOLES 94 C1 G2 E2 C2E1 E2 4 G1 E1 13 18 E2 17 48 C2E1 23 4 23 E2 G2 17 C1 E1 G1 CIRCUIT DIAGRAM 3-M5 NUTS 12 80 0.25 7 16 7 16 Tab #110, t = 0.5 8 LABEL 21.2 30MAX 7.5 16 Jun. 2006 MITSUBISHI IGBT MODULES CM150DY-24H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso (Tj = 25C, unless otherwise specified) Parameter Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage -- Torque strength -- Weight ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf VEC(Note 1) trr (Note 1) Qrr (Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Conditions Collector-emitter voltage Gate-emitter voltage G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C (Note 2) Unit V V A A W C C V N*m N*m g (Tj = 25C, unless otherwise specified) Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Contact thermal resistance (Note 2) Main terminal to base plate, AC 1 min. Main terminal M5 Mounting holes M6 Typical value VCE = VCES, VGE = 0V Min. -- Limits Typ. -- Max. 1 IC = 15mA, VCE = 10V 4.5 6 7.5 V -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.5 2.25 -- -- -- 750 -- -- -- -- -- -- 1.11 -- -- -- 0.5 3.4 -- 30 10.5 6 -- 250 350 300 350 3.5 250 -- 0.11 0.24 0.13 A Parameter Thermal resistance Ratings 1200 20 150 300 150 300 1100 -40 ~ +150 -40 ~ +125 2500 1.47 ~ 1.96 1.96 ~ 2.94 270 Test conditions VGE = VGES, VCE = 0V IC = 150A, VGE = 15V (Note 4) Tj = 25C Tj = 150C VCE = 10V VGE = 0V VCC = 600V, IC = 150A, VGE = 15V VCC = 600V, IC = 150A VGE1 = VGE2 = 15V RG = 2.1, Inductive load switching operation IE = 150A, VGE = 0V IE = 150A die/dt = -300A/s IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied (1/2 module) Unit mA V nF nC ns V ns C C/W Note 1. IE, IEM, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Jun. 2006 2 MITSUBISHI IGBT MODULES CM150DY-24H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) 12 11 200 10 100 9 8 7 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 300 15 VGE = 20 (V) Tj = 25C 0 1 2 3 4 5 6 7 8 100 Tj = 25C Tj = 125C 0 2 4 6 8 10 12 14 16 18 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 VGE = 15V Tj = 25C Tj = 125C 4 3 2 1 0 0 100 300 200 8 7 6 IC = 300A 5 IC = 150A 4 3 2 IC = 60A 1 0 0 2 4 6 8 10 12 14 16 18 20 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102 Tj = 25C 3 2 102 7 5 3 2 101 1.0 Tj = 25C 9 GATE-EMITTER VOLTAGE VGE (V) CAPACITANCE Cies, Coes, Cres (nF) 7 5 10 COLLECTOR CURRENT IC (A) 103 EMITTER CURRENT IE (A) 200 0 9 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) 300 TRANSFER CHARACTERISTICS (TYPICAL) 7 5 3 2 VGE = 0V Cies 101 7 5 3 2 Coes 100 7 5 Cres 3 2 3.5 10-1 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 1.5 2.0 2.5 3.0 Jun. 2006 3 MITSUBISHI IGBT MODULES CM150DY-24H HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) tf td(off) 3 td(on) 2 tr 102 7 5 VCC = 600V VGE = 15V RG = 2.1 Tj = 125C 3 2 101 1 10 2 3 5 7 102 2 2 5 3 3 2 lrr 2 102 trr 101 7 5 7 5 3 3 2 2 2 3 5 7 102 2 3 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) Per unit base = Rth(j-c) = 0.11C/W 7 5 3 2 3 2 10-1 10-1 10-2 10-2 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) 100 5 7 103 COLLECTOR CURRENT IC (A) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25C 100 5 101 1 10 5 7 103 3 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (ratio) SWITCHING TIME (ns) 7 5 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (ratio) REVERSE RECOVERY TIME trr (ns) 103 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 102 103 -di/dt = 300A/s 7 7 Tj = 25C REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE INSULATED TYPE 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25C 2 100 Per unit base = Rth(j-c) = 0.24C/W 7 5 3 2 3 2 10-1 10-1 10-2 10-2 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 150A 18 VCC = 400V 16 14 VCC = 600V 12 10 8 6 4 2 0 0 200 400 600 800 1000 1200 GATE CHARGE QG (nC) Jun. 2006 4