CM150DY-24H
APPLICATION
UPS, NC machine, AC-Drive control, Servo, Welders
MITSUBISHI IGBT MODULES
CM150DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
¡IC ...................................................................150A
¡VCES ......................................................... 1200V
¡Insulated Type
¡2-elements in a pack
¡UL Recognized
Yellow Card No. E80276
File No. E80271
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
Jun. 2006
G2E2E1G1
94
17 23 23 17
C2E1 E2 C1
13
18 44
48
80 ±0.25
1616 1677
7.521.2
30MAX
8
E2 C1
C2E1
G1
E2
E1
G2
3–M5
NUTS 12
2 – φ6.5
MOUNTING HOLES
LABEL
CIRCUIT DIAGRAM
Tab #110, t = 0.5
Jun. 2006
2
MITSUBISHI IGBT MODULES
CM150DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
VCE = VCES, VGE = 0V
±VGE = VGES, VCE = 0V
IC = 150A, VGE = 15V (Note 4)
VCC = 600V, IC = 150A, VGE = 15V
VCC = 600V, IC = 150A
VGE1 = VGE2 = 15V
RG = 2.1Ω, Inductive load switching operation
IE = 150A, VGE = 0V
IE = 150A
die/dt = –300A/µs
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound Applied (1/2 module)
Collector cutoff current
Gate-emitter threshold
voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Contact thermal resistance
IC = 15mA, VCE = 10V
Tj = 25°C
Tj = 150°C
VCE = 10V
VGE = 0V
1200
±20
150
300
150
300
1100
–40 ~ +150
–40 ~ +125
2500
1.47 ~ 1.96
1.96 ~ 2.94
270
V
V
A
A
W
°C
°C
V
N • m
N • m
g
1
0.5
3.4
—
30
10.5
6
—
250
350
300
350
3.5
250
—
0.11
0.24
0.13
mA
µA
nF
nC
ns
µC
°C/W
—
—
2.5
2.25
—
—
—
750
—
—
—
—
—
—
1.11
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6V
V
4.5 7.5
V
ns
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
VEC(
Note 1
)
trr (
Note 1
)
Qrr (
Note 1
)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Symbol Parameter
VGE(th)
VCE(sat)
Note 1. IE, IEM, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
TC = 25°C
Pulse (Note 2)
TC = 25°C
Pulse (Note 2)
TC = 25°C
Main terminal to base plate, AC 1 min.
Main terminal M5
Mounting holes M6
Typical value
Symbol Parameter
Collector current
Emitter current
Torque strength
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
Tj
Tstg
Viso
—
—
Unit
Typ.
Limits
Min. Max.
Test conditions
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Thermal resistance
Jun. 2006
3
MITSUBISHI IGBT MODULES
CM150DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
EMITTER CURRENT IE (A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
300
200
100
010510 234 6789
VGE = 20
(V) 12
10
9
15
11
8 7
Tj = 25°C
300
200
100
0201020 468 12141618
Tj = 25°C
Tj = 125°C
5
4
3
2
1
03000 100 200
Tj = 25°C
Tj = 125°C
VGE = 15V
10
8
6
4
2
0201020 468 12141618
9
7
5
3
1
Tj = 25°C
IC = 300A
IC = 150A
IC = 60A
10
1
10
3
7
5
3
2
1.0 1.5 2.0
10
2
7
5
3
2
2.5 3.0 3.5
T
j = 25°C
10
0
2310
–1
5710
0
23 5710
1
23 5710
2
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
Cies
VGE = 0V
Coes
Cres
Jun. 2006
4
MITSUBISHI IGBT MODULES
CM150DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIME (ns)
COLLECTOR CURRENT I
C
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT IE (A)
REVERSE RECOVERY TIME t
rr
(ns)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
(ratio)
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
(ratio)
TIME (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
REVERSE RECOVERY CURRENT l
rr
(A)
10
1
10
3
7
5
3
2
10
1
23 57
10
2
10
2
7
5
3
2
23 57
10
3
td(off)
VCC = 600V
VGE = ±15V
RG = 2.1Ω
Tj = 125°C
td(on)
tf
tr
10
1
10
3
7
5
3
2
10
1
23 57
10
2
10
2
7
5
3
2
23 57
10
3
10
2
7
5
3
2
10
1
7
5
3
2
10
0
–di/dt = 300A/µs
Tj = 25°C
lrr
trr
10
1
10
–3
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
3
2
23 57 23 57
Single Pulse
TC = 25°C
Per unit base = Rth(j–c) = 0.11°C/W
10
1
10
–3
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
3
2
23 57 23 57
Single Pulse
TC = 25°C
Per unit base = Rth(j–c) = 0.24°C/W
12001000200 400 600 800
20
16
12
8
4
0
18
14
10
6
2
0
VCC = 400V
VCC = 600V
IC = 150A
