CHARACTERISTICS Base-to-Emitter Voltage (with collector ma = 10 and base ma = 0.5) Collector-to-Emitter Saturation Voltage (with coliector ma = --10 and base ma = 0.5)......0... 0.0000 00s in Common-Emitter Circuit Smatl-Signal Forward Current-Transfer Ratio (with collector-to- emitter volts = 5, collector ma = 10, and frequency = 100 Me).. DC Forward Current-Transfer Ratio (with collector-to-emitter volts = 0.5 and collector ma = 10)...... 0.0.0: cee cece ee eres TRANSISTOR 8 Germanium p-n-p type used in high-speed switching applications in : data-processing equipment. JEDEC of g No. TO-18; outline 12, Outlines Sec- tion. This type is electrically identical with type 2N1300. TRANSISTOR B Germanium p-n-p type used in high-speed switching applications in 5 c data-processing equipment. JEDEC No. TO-18 package; outline 12, Out- lines Section. This type is electrically identical with type 2N1801. TRANSISTOR 2)B Germanium p-n-p type used in high-speed switching applications in data-processing equipment. JEDEC E No. T'O-18 package; outline 12, Out- lines Section. This type is electrically identical with type 2N1683. TRANSISTOR 2)8 Germanium p-n-p type used in high-speed switching applications in which high reliability and high pack- aging densities are required. JEDEC No. TO-18; outline 12, Outlines Sec- tion. On MAXIMUM RATINGS COLLECTOR-TO-BASE VOLTAGE (with emitter open). ..............0000us COLLECTOR-TO-EMITTER VOLTAGE (with external base resistance = 10 ohms or less) EMITTER-TO-BASE VOLTAGE (with cullector open) ...........0.0..00000- COLLECTOR CURRENT... 6. eect eecceeee eee ene etre cue eenee TECHNICAL DATA +0.5 max 0.5 max 2N794 2N795 2N796 2N828 volt volt volts volts volts ma 177