For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - Driver & GAin Block - smT
8
8 - 1
HMC478SC70 / 478SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
v01.0811
General DescriptionFunctional Diagram
Typical Applications
Electrical Specications, Vs= 5V, Rbias= 18 Ohm, TA = +25° C
Features
The HMC478SC70(E) is a SiGe Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
amplier covering DC to 4 GHz. This industry
standard SC70 packaged amplier can be used as
a cascadable 50 Ohm RF/IF gain stage as well as
a LO or PA driver with up to +17 dBm output power.
The HMC478SC70(E) offers 23 dB of gain with a
+31 dBm output IP3 at 850 MHz while requiring only
62 mA from a single positive supply. The Darlington
topology results in reduced sensitivity to normal
process variations and excellent gain stability over
temperature while requiring a minimal number of
external bias components.
P1dB Output Power: +17 dBm
Gain: 23 dB
Output IP3: +31 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +8V
Industry Standard SC70 Package
The HMC478SC70(E) is an ideal for:
• Cellular / PCS / 3G
• WiBro / WiMAX / 4G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Parameter Min. Ty p . Max. Units
Gain
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
20
16
13
11
24
20
17
15
dB
dB
dB
dB
Gain Variation Over Temperature DC - 4 GHz 0.015 0.02 dB/ °C
Input Return Loss DC - 3.0 GHz
3.0 - 4.0 GHz
15
17
dB
dB
Output Return Loss DC - 3.0 GHz
3.0 - 4.0 GHz
15
13
dB
dB
Reverse Isolation DC - 4 GHz 20 dB
Output Power for 1 dB Compression (P1dB)
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
13
11
9
16
15
12
dBm
dBm
dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
31
28
25
dBm
dBm
dBm
Noise Figure DC - 3.0 GHz
3.0 - 4.0 GHz
2.5
2.8
dB
dB
Supply Current (Icq) 62 82 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - Driver & GAin Block - smT
8
8 - 2
Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
HMC478SC70 / 478SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
v01.0811
-30
-20
-10
0
10
20
30
012345678
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
5
10
15
20
25
30
012345
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
012345
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
012345
S21
S11
S22
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
012345
+25C
+85C
-40C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
012345
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - Driver & GAin Block - smT
8
8 - 3
P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Temperature
Icc vs. Vcc Over Temperature for
Fixed Vs= 5V, Rbias= 18 Ohms
Gain, Power & Output IP3 vs. Supply
Voltage for Rs = 18 Ohms @ 850 MHz
HMC478SC70 / 478SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
v01.0811
0
4
8
12
16
20
24
012345
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
012345
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
10
15
20
25
30
35
012345
+25C
+85C
-40C
IP3 (dBm)
FREQUENCY (GHz)
8
10
12
14
16
18
20
22
24
26
28
30
32
34
4.75 5 5.25
Gain
P1dB
Psat
IP3
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
Vs (Vdc)
40
45
50
55
60
65
70
75
80
3.60 3.70 3.80 3.90 4.00 4.10 4.20
Icc (mA)
Vcc (V)
+85C
+25C
-40C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - Driver & GAin Block - smT
8
8 - 4
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +6 Vdc
Collector Bias Current (Icc) 100 mA
RF Input Power (RFIN)(Vcc = +2.4 Vdc) +5 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 9 mW/°C above 85 °C) 0.583 W
Thermal Resistance
(junction to lead) 111.5 °C/ W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HBM) Class 1C
Part Number Package Body Material Lead Finish MSL Rating Package Marking
HMC478SC70 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 478
HMC478SC70E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 478E
[1] Max peak reow temperature of 235 °C
[2] Max peak reow temperature of 260 °C
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC478SC70 / 478SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
v01.0811
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD MATERIAL: COPPER ALLOY
3. LEAD PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - Driver & GAin Block - smT
8
8 - 5
Pin Number Function Description Interface Schematic
1, 2, 4, 5 GND These pins must be connected to RF/DC ground.
3RFIN This pin is DC coupled.
An off chip DC blocking capacitor is required.
6RFOUT RF output and DC Bias (Vcc) for the output stage.
Application Circuit
Pin Descriptions
HMC478SC70 / 478SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
v01.0811
Recommended Component Values for Key Application Frequencies
Component Frequency (MHz)
50 900 1900 2200 2400 3500
L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH
C1, C2 0.01 µF 100 pF 100 pF 100 pF 100 pF 100 pF
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. Rbias provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs) 5V 6V 8V
Rbias Value 18 Ω 35 Ω 67 Ω
Rbias Power rating 1/8 W 1/4 W 1/2 W
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - Driver & GAin Block - smT
8
8 - 6
Evaluation PCB
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads should be connected directly to the ground
plane similar to that shown. A sufficient number
of via holes should be used to connect the top
and bottom ground planes. The evaluation board
should be mounted to an appropriate heat sink. The
evaluation circuit board shown is available from
Hittite upon request.
List of Materials for Evaluation PCB 118039 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 - J4 DC Pin
C1 - C3 100 pF Capacitor, 0402 Pkg.
C4 1000 pF Capacitor, 0603 Pkg.
C5 2.2 µF Capacitor, Tantalum
R1 18 Ohm Resistor, 1210 Pkg.
L1 18 nH Inductor, 0603 Pkg.
U1 HMC478SC70(E)
PCB [2] 117360 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
HMC478SC70 / 478SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
v01.0811