Linear Integrated Systems
Linear Integrated Systems
4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261
FEATURES
VERY HIGH INPUT IMPEDANCE
HIGH GATE BREAKDOWN
ULTRA LOW LEAKAGE
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
(TA= 25°C unless otherwise noted)
Drain-Source or Drain-Gate Voltage (NOTE 2)
3N165 40 V
3N166 30 V
Transient G-S Voltage (NOTE 3) ±125 V
Gate-Gate Voltage ±80 V
Drain Current (NOTE 2) 50 mA
Storage Temperature -65°C to +200°C
Operating Temperature -55°C to +150°C
Lead Temperature (Soldering, 10 sec.) +300°C
Power Dissipation (One Side) 300 mW
Total Derating above 25°C 4.2 mW/°C
MONOLITHIC DUAL P-CHANNEL
ENHANCEMENT MODE MOSFET
3N165, 3N166
TO-99
Bottom View
Device Schematic
S
D1
G1 CG2
D2
17
5
4
8
3
LIMITS
SYMBOL CHARACTERISTICS MIN. MAX. UNITS CONDITIONS
IGSSR Gate Reverse Leakage Current -- 10 VGS= 40 V
IGSSF Gate Forward Leakage Current -- -10 VGS= -40 V
-- -25 pA TA=+125°C
IDSS Drain to Source Leakage Current -- -200 VDS= -20 V
ISDS Source to Drain Leakage Current -- -400 VSD= -20 V VDB= 0
ID(on) On Drain Current -5 -30 mA VDS= -15 V VGS= -10 V
VGS(th) Gate Source Threshold Voltage -2 -5 V VDS= -15 V ID= -10 µA
VGS(th) Gate Source Threshold Voltage -2 -5 V VDS= VGS ID= -10 µA
rDS(on) Drain Source ON Resistance -- 300 ohms VGS= -20 V ID= -100 µA
gfs Forward Transconductance 1500 3000 µsV
DS= -15V ID= -10mA f=1kHz
gos Output Admittance -- 300 µs
Ciss Input Capacitance -- 3.0
Crss Reverse Transfer Capacitance -- 0.7 pF VDS= -15V ID= -10mA f=1MHz
Coss Output Capacitance -- 3.0 (NOTE 4)
RE(Yfs)Common Source Forward Transconductance 1200 -- µsV
DS= -15V ID= -10mA f=100MHz
(NOTE 4)
ELECTRICAL CHARACTERISTICS (TA=25°C and VBS=0 unless otherwise specified)