©2001 Fairchild Semiconductor Corporation
April 2001
SGS23N60UFD Rev. A
IGBT
SGS23N60UFD
SGS23N60UFD
Ultra-Fast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 12A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 42ns (typ.)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteris ti cs
Symbol Description SGS23N60UFD Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
ICCollector Current @ TC = 25°C23 A
Collector Current @ TC = 100°C12 A
ICM (1) Pulsed Collector Current 92 A
IFDiode Continuous Forward Current @ TC = 100°C12 A
IFM Diode Maximum Forward Current 92 A
PDMaximum Power Dissipation @ TC = 25°C73 W
Maximum Power Dissipation @ TC = 100°C29 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds 300 °C
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Juncti on-to-Case -- 1.7 °C/W
RθJC(DIOD E) Thermal Resistance, Junction-to- Case -- 1.2 °C/W
RθJA Thermal Resistance, Junction-to- Am bient -- 62.5 °C/W
Application
AC & DC Motor controls, general purpose inverters, robotics , servo controls
G
C
E
TO-220F
G C E
©2001 Fairchild Semiconductor Corporation SGS23N60UFD Rev. A
SGS23N60UFD
Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆BVCES/
∆TJ
Temperature Coeff . of Breakdown
Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/°C
ICES Collect or Cut-off Current VCE = VCES, VGE = 0V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 µA
On Characteri st ics
VGE(th) G -E Th reshold Voltage IC = 12mA, VCE = VGE 3.5 4.5 6.5 V
VCE(sat) Collector to Emitter
Saturation V oltage IC = 12A, VGE = 15V -- 2.1 2.6 V
IC = 23A, VGE = 15V -- 2.6 -- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
-- 720 -- pF
Coes Output Capacitance -- 100 -- pF
Cres Reverse Transfer Capacitance -- 25 -- pF
Switching Characteristics
td(on) Turn- On Delay Time
VCC = 300 V, IC = 12A,
RG = 23Ω, VGE = 15V,
Inductive Load, TC = 25°C
-- 17 -- ns
trRise Time -- 27 -- ns
td(off) Turn-Off D e l a y Time -- 60 130 n s
tfFall Time -- 70 150 ns
Eon Turn-On Switching Loss -- 115 -- µJ
Eoff Tu r n - Off Sw i tchin g Loss -- 13 5 -- µJ
Ets Total Switching Loss -- 250 400 µJ
td(on) Turn- On Delay Time
VCC = 300 V, IC = 12A,
RG = 23Ω, VGE = 15V,
Inductive Load, TC = 125°C
-- 23 -- ns
trRise Time -- 32 -- ns
td(off) Turn-Off D e l a y Time -- 100 200 n s
tfFall Time -- 220 250 ns
Eon Turn-On Switching Loss -- 205 -- µJ
Eoff Turn-Off Switching Loss -- 320 -- µJ
Ets Total Switching Loss -- 525 800 µJ
QgTotal Gate Charge VCE = 300 V, IC = 12A,
VGE = 15V
-- 49 80 nC
Qge Gate-Emitter Charge -- 11 17 nC
Qgc Gate-Collector Charge -- 14 22 nC
Le Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH
Symbol Parameter Test Conditions Min. Typ. Max. Units
VFM Diode Forward V oltage IF = 12A TC = 25°C-- 1.4 1.7 V
TC = 100°C-- 1.3 --
trr Diode Reverse Recovery Time
IF = 12A,
di/dt = 200A/µs
TC = 25°C-- 42 60 ns
TC = 100°C-- 80 --
Irr Diode Peak Reverse Recovery
Current TC = 25°C-- 3.5 6.0 A
TC = 100°C-- 5.6 --
Qrr Diode Reverse Recovery Charge TC = 25°C-- 80 180 nC
TC = 100°C-- 220 --
©2001 Fairchild Semiconductor Corporation SGS23N60UFD Rev. A
SGS23N60UFD
048121620
0
4
8
12
16
20 Common Emitter
TC = 25℃
24A
12A
IC = 6A
Collector - Emitter Voltage, V
CE [V]
Gate - Emitter Voltage, VGE [V ]
0.5 1 10
0
10
20
30
40
50 Comm o n E mi tter
VGE = 15V
TC = 25℃
TC = 125℃
Collector Current, I
C [A]
Collector - Emitter Voltage, VCE [V]
02468
0
20
40
60
80
100 20V
12V
15V
VGE = 10V
Common Emitter
TC = 25℃
Collector Current, I
C [A]
Collector - Emitter Voltage, VCE [V]
Fig 1. Ty pical Out put C hac ract eris tics Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturat i on Voltage vs. Case
Temp erature at Vari ant Current Level Fig 4. Load Cu rr ent vs. Fr equency
Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE
0 4 8 12 16 20
0
4
8
12
16
20 Com mon E mitter
TC = 125℃
24A
12A
IC = 6A
Collector - Emitter Voltage, V
CE [V]
Gate - Emitter Voltage, VGE [V]
0306090120150
0
1
2
3
4
24A
12A
IC = 6A
Common Emitter
VGE = 15V
Coll ector - Emi tter Voltage, V
CE [V]
Case Temperature, TC [℃]
0
3
6
9
12
15
18
0.1 1 10 100 1000
Duty cycle : 50 %
TC = 100℃
Power Dissipation = 16W
VCC = 30 0V
Load Cu rrent : pe ak of square wa ve
Frequency [KHz]
Load Current [A]
©2001 Fairchild Semiconductor Corporation SGS23N60UFD Rev. A
SGS23N60UFD
110100200
30
100
1000
Eon
Eoff
Eon
Eoff
Com mon E mitter
VCC = 300 V, VGE = ±15V
IC = 12A
TC = 25℃
TC = 125℃
Switc hing Loss [uJ]
Gate Resistance, RG [Ω]
110100200
50
100
1000
Toff
Tf
Toff
Tf
Common Emitter
VCC = 300V, VGE = ±15V
IC = 12A
TC = 25℃
TC = 125℃
Switching Time [ns ]
Gate Resistance, RG [Ω]
110100200
10
100
200 Common Emitter
VCC = 300 V, VGE = ±15V
IC = 12A
TC = 25℃
TC = 125℃
Ton
Tr
Switching Time [ns]
Gate Resistance, RG [Ω]
Fig 7. Capaci tanc e C harac t eristics Fig 8. Tur n- O n C har acteristi cs vs.
Gate Resistance
Fig 9. Tur n-Off Charac teri st ic s vs.
Gate Resistance Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On C har acteristi cs vs.
Collector Current Fig 12. Tur n- O ff C haracteri st i cs vs.
Collector Current
4 8 12 16 20 24
50
100
1000
Toff
Tf
Toff
Tf
Comm on Emitter
VCC = 300V, VGE = ±15V
RG = 23Ω
TC = 25℃
TC = 125℃
Switching Time [ns]
Collector Current, IC [A]
4 8 12 16 20 24
10
100
200
Ton
Tr
Common Emitter
VCC = 300V, VGE = ±15V
RG = 23Ω
TC = 25℃
TC = 125℃
Swit ch ing Time [ n s]
Collector Current, IC [A]
11030
0
200
400
600
800
1000
1200
Cres
Coes
Cies
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
Capacitance [pF]
Collector - Emitter Voltage, VCE [V]
©2001 Fairchild Semiconductor Corporation SGS23N60UFD Rev. A
SGS23N60UFD
10-5 10-4 10-3 10-2 10-1 100101
0.005
0.01
0.1
1
5
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Therm al R esp onse, Zthjc [ ℃/W]
Rectangular Pu lse Duration [sec]
1 10 100 1000
0.1
1
10
100
200
Safe Operating Area
VGE = 20V, TC = 100℃
Collector C u rrent, I
C [A]
Collector-Emitter Voltage, VCE [V]
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics
Fig 13. Switching Loss vs. Collector Current
Pdm
t1
t2
Dut y factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
Fig 17. Tra nsien t The rma l Imped anc e of IGBT
4 8 12 16 20 24
10
100
1000
Eoff
Eon
Eon
Eoff
Common Emitter
VCC = 300V, VGE = ±15V
RG = 23Ω
TC = 25℃
TC = 125℃
Swit chin g Loss [ uJ]
Collector Current, IC [A ]
0 1020304050
0
3
6
9
12
15
300 V
200 V
VCC = 10 0 V
Comm on Em itter
RL = 25 Ω
TC = 25℃
Gate - Em itter Vo l ta ge , V
GE [ V ]
Gat e Charge, Qg [ nC ]
0.3 1 10 100 1000
0.05
0.1
1
10
100
300
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
line rarly wit h inc re a se
in temperature
50us
100us
1㎳
DC Operation
IC MAX. (Continuous)
IC MAX. (Pulsed)
Collector Cu rr ent, I
C [A]
Collector-Emitter Voltage, VCE [V]
©2001 Fairchild Semiconductor Corporation SGS23N60UFD Rev. A
SGS23N60UFD
100 1000
0
20
40
60
80
100 VR = 200V
IF = 12A
TC = 25℃
TC = 100℃
Reverce Recovery Time, t
rr [ns]
di/dt [A/us]
100 1000
0
100
200
300
400
500
600 VR = 200V
IF = 12A
TC = 25℃
TC = 100 ℃
Stored Recovery Charge, Q
rr [nC]
di/dt [A/us]
100 1000
1
10
100 VR = 200V
IF = 12A
TC = 25℃
TC = 100℃
Revers e Recovery Current, I
rr [A]
di/dt [A/us]
1
10
100
0123
TC = 25℃
TC = 100℃
Forward Voltage Drop, V FM [V]
Forwar d Curren t , I
F [A]
Fig 19. R everse R ecovery CurrentFig 18. Forward Characteristics
Fig 20. Stored Charge Fig 21. Reverse Recovery Time
©2001 Fairchild Semiconductor Corporation SGS23N60UFD Rev. A
SGS23N60UFD
Package Dimension
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30 ±0.10
15.80 ±0.20
15.87 ±0.20
6.68 ±0.20
9.75 ±0.30
4.70 ±0.20
10.16 ±0.20
(1.00x45°)
2.54 ±0.20
0.80 ±0.10
9.40 ±0.20
2.76 ±0.20
0.35 ±0.10
ø3.18 ±0.10
2.54TYP
[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
0.50 +0.10
–0.05
TO-220F (FS PKG CODE AQ)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
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intended to be an exhaustive list of all such trademarks.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended f or surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical compon ent is any com ponent of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Ident i ficati on Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reser ves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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