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November 1998 FDS6875 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits. SuperSOTTM-6 SOT-23 SuperSOTTM-8 -6 A, -20 V. RDS(ON) = 0.030 @ VGS = -4.5 V, RDS(ON) = 0.040 @ VGS = -2.5 V. Low gate charge (23nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SO-8 SOIC-16 SOT-223 D2 D1 D2 D1 SO-8 S FD 75 68 pin 1 S1 Absolute Maximum Ratings G1 S2 G2 5 4 6 3 7 2 8 1 TA = 25oC unless otherwise noted Symbol Parameter FDS6875 Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage 8 V ID Drain Current - Continuous -6 A (Note 1a) - Pulsed PD Power Dissipation for Dual Operation Power Dissipation for Single Operation TJ,TSTG -20 2 (Note 1a) (Note 1b) 1 (Note 1c) 0.9 Operating and Storage Temperature Range W 1.6 -55 to 150 C THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W RJC Thermal Resistance, Junction-to-Case (Note 1) 40 C/W (c) 1998 Fairchild Semiconductor Corporation FDS6875 Rev.C Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A -20 BVDSS/TJ Breakdown Voltage Temp. Coefficient ID = -250 A, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V o V mV/oC -21 TJ = 55C -1 A -10 A IGSSF Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -8 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A VGS(th)/TJ Gate Threshold Voltage Temp. Coefficient ID = 250 A, Referenced to 25 oC -0.4 RDS(ON) Static Drain-Source On-Resistance VGS = -4.5 V, ID = -6 A TJ =125C On-State Drain Current VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -4.5 V, ID = -6 A -1.5 V mV/oC 2.8 VGS = -2.5 V, ID = -5.3 A ID(ON) -0.8 0.024 0.03 0.033 0.048 0.032 0.04 -20 A 22 S 2250 pF 500 pF 200 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time VDS= -10 V, ID = -1 A 8 16 ns tr Turn - On Rise Time VGEN = -4.5 V, RGEN = 6 15 27 ns tD(off) Turn - Off Delay Time 98 135 ns tf Turn - Off Fall Time 35 55 ns Qg Total Gate Charge VDS = -10 V, ID = -6 A, 23 31 nC Qgs Gate-Source Charge VGS = -5 V 3.9 nC Qgd Gate-Drain Charge 5.5 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2) -0.7 -1.3 A -1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a. 78OC/W on a 0.5 in2 pad of 2oz copper. b. 125OC/W on a 0.02 in2 pad of 2oz copper. c. 135OC/W on a 0.003 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. FDS6875 Rev.C Typical Electrical Characteristics VGS = -4.5V 2.5 -2.5V -3.0V R DS(ON), NORMALIZED 15 -2.0V 10 5 DRAIN-SOURCE ON-RESISTANCE - I D, DRAIN-SOURCE CURRENT (A) 20 0 0 0.6 1.2 1.8 2.4 2 1.5 -3.5 V 0 R DS(ON), ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED 8 12 - I D , DRAIN CURRENT (A) 16 20 0.1 I D= -6A VGS = -4.5V 1.2 1 0.8 -25 0 25 50 75 100 125 I D = -3.0A 0.08 0.06 0.04 T A= 125C 0.02 25 C 0 150 1 2 T , JUNCTION TEMPERATURE ( C) -V J Figure 3. On-Resistance Variation Temperature. GS with 3 4 5 , GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. V DS = -5.0V TJ = -55 C 25 C 15 125 C 10 5 0 0.5 - I S , REVERSE DRAIN CURRENT (A) 20 20 - I D, DRAIN CURRENT (A) 4 Figure 2. On-Resistance Variation with Dain Current and Gate Voltage. 1.6 DRAIN-SOURCE ON-RESISTANCE -4.5V 1 0.5 3 Figure 1. On-Region Characteristics. 0.6 -50 -2.5 V -3.0 V - V DS , DRAIN-SOURCE VOLTAGE (V) 1.4 V GS = -2.0V VGS = 0V 5 1 TJ = 125 C 25 C 0.1 -55 C 0.01 0.001 1 1.5 2 - VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.3 0.6 0.9 1.2 - VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6875 Rev.C 4000 5 ID = -6A Ciss 2000 4 V DS = -5V -10V -15V 3 CAPACITANCE (pF) - V GS , GATE-SOURCE VOLTAGE (V) Typical Electrical Characteristics (continued) 2 1000 Coss 500 Crss f = 1 MHz VGS = 0 V 200 1 100 0.1 0 0 5 10 15 20 25 0.2 30 1m 10 0m 0u 0.05 0.01 0.1 5 10 20 30 s SINGLE PULSE RJA =135C/W TA = 25C 25 s s 1s 10 s DC VGS = -4.5V SINGLE PULSE RJA = 135 C/W TA = 25 C 2 s POWER (W) 10m 3 20 15 10 5 0.3 1 2 5 10 0 0.01 30 0.1 - VDS , DRAIN-SOURCE VOLTAGE (V) 0.5 10 50 100 300 SINGLE PULSE TIME (SEC) Figure 10. Single Pulse Maximum Power Dissipation. Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE - I D , DRAIN CURRENT (A) 10 IT LIM N) (O S RD 0.5 1 Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 10 0.5 - V DS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) 1 0.5 0.2 0.1 0.05 0.02 0.01 D = 0.5 0.2 R JA (t) = r(t) * R JA R JA = 135C/W 0.1 0.05 0.02 P(pk) 0.01 t1 Single Pulse 0.005 0.002 0.001 0.0001 t2 TJ - TA = P * R JA(t) Duty Cycle, D = t1 /t2 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6875 Rev.C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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