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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. October 1997 FDV302P Digital FET, P-Channel General Description Features This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one P-channel FET can replace several digital transistors with different bias resistors such as the DTCx and DCDx series. -25 V, -0.12 A continuous, -0.5 A Peak. RDS(ON) = 13 @ VGS= -2.7 V RDS(ON) = 10 @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. Replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET. SOT-23 SuperSOTTM-8 SuperSOTTM-6 SO-8 SOIC-16 SOT-223 Mark:302 D S G Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current PD Maximum Power Dissipation TJ,TSTG Operating and Storage Temperature Range ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) - Continuous - Pulsed FDV302P Units -25 V -8 V -0.12 A -0.5 0.35 W -55 to 150 C 6.0 kV 357 C/W THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (c) 1997 Fairchild Semiconductor Corporation FDV302P REV. F Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min -25 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A BVDSS/TJ Breakdown Voltage Temp. Coefficient ID = -250 A, Referenced to 25 o C IDSS Zero Gate Voltage Drain Current VDS = -20 V, VGS = 0 V IGSS Gate - Body Leakage Current VGS = -8 V, VDS= 0 V V TJ = 55C ON CHARACTERISTICS mV / oC -20 -1 A -10 A -100 nA (Note) VGS(th)/TJ Gate Threshold Voltage Temp. Coefficient ID = -250 A, Referenced to 25 oC VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A RDS(ON) Static Drain-Source On-Resistance mV / oC 1.9 -0.65 -1 -1.5 V VGS = -2.7 V, ID = -0.05 A 10.6 13 VGS = -4.5 V, ID = -0.2 A 7.9 10 12 18 TJ =125C ID(ON) On-State Drain Current VGS = -2.7 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID= -0.2 A -0.05 A 0.135 S 11 pF 7 pF 1.4 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -10 V, VGS = 0 V, f = 1.0 MHz (Note) VDD = -6 V, ID = -0.2 A, VGS = -4.5 V, RGEN = 50 VDS = -5 V, ID = -0.2 A, VGS = -4.5 V 5 12 ns 8 16 ns 9 18 ns 5 10 ns 0.22 0.31 nC 0.11 nC 0.04 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.2 A (Note) -1 -0.2 A -1.5 V Note: Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. FDV302P REV. F 0.2 2 -4.0 -3.5 V GS = -5.0V -4.5 RDS(ON), NORMALIZED -3.0 0.15 -2.7 -2.5 0.1 -2.0 0.05 0 0 1 2 3 DRAIN-SOURCE ON-RESISTANCE -I D , DRAIN-SOURCE CURRENT (A) Typical Electrical Characteristics V GS = -2.0 V 1.5 -2.7 -3.0 1 -4.0 -3.5 -4.5 0.5 4 -2.5 0 0.05 -VDS , DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. R DS(ON) ,ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.2 25 I D = -0.05A V GS = -2.7V 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150 0.08 15 10 5 0 -I S , REVERSE DRAIN CURRENT (A) 0.04 0.02 1.5 -V GS 2 1 2 GS 3 4 5 6 7 8 ,GATE TO SOURCE VOLTAGE (V) 0.5 125C 1 0 Figure 4. On Resistance Variation with Gate-To- Source Voltage. 25C 0.06 125 C -V TA = -55C V DS = -5V ID = -0.05A TA= 25C 20 Figure 3. On-Resistance Variation with Temperature. -ID , DRAIN CURRENT (A) 0.15 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0 0.5 0.1 -I D , DRAIN CURRENT (A) 2.5 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 VGS = 0V TJ = 125C 0.1 25C 0.01 -55C 0.001 0.0001 0.2 0.4 0.6 0.8 1 1.2 -VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDV302P REV. F Typical Electrical And Thermal Characteristics 25 I D = -0.2A VDS = -5V 15 -10 6 -15 CAPACITANCE (pF) -V GS , GATE-SOURCE VOLTAGE (V) 8 4 2 C iss 10 Coss 5 3 2 0 0 0.1 0.2 0.3 0.4 f = 1 MHz V GS = 0 V 1 0.1 0.5 Q g , GATE CHARGE (nC) 2 5 10 15 25 Figure 8. Capacitance Characteristics. 1 5 1m 0.5 RD S(O L N) IM 10 0m s IT s 1s 0.1 10 s 0.05 1 2 3 2 DC VGS = -2.7V SINGLE PULSE RJA = 357 C/W TA = 25C 0.02 SINGLE PULSE R JA =357 C/W TA = 25C 4 POWER (W) 0.2 1 0 0.001 5 10 15 20 30 0.01 40 0.1 1 10 100 300 SINGLE PULSE TIME (SEC) - VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. Figure 9. Maximum Safe Operating Area. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -ID , DRAIN CURRENT (A) 1 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 0.01 0.3 Crss 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.02 0.01 0.005 R JA (t) = r(t) * R JA R JA = 357 C/W 0.05 P(pk) 0.02 0.01 t1 Single Pulse TJ - T = P * R JA (t) Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 t2 0.001 0.01 0.1 t1 , TIME (sec) 1 10 A 100 300 Figure 11. Transient Thermal Response Curve. FDV302P REV. F ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. 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All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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