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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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October 1997
FDV302P
Digital FET, P-Channel
General Description Features
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter FDV302PUnits
VDSS Drain-Source Voltage -25 V
VGSS Gate-Source Voltage -8 V
IDDrain Current - Continuous -0.12 A
- Pulsed -0.5
PDMaximum Power Dissipation 0.35 W
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
ESD Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm) 6.0 kV
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W
FDV302P REV. F
-25 V, -0.12 A continuous, -0.5 A Peak.
RDS(ON) = 13 Ω @ VGS= -2.7 V
RDS(ON) = 10 Ω @ VGS = -4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. VGS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Compact industry standard SOT-23 surface mount
package.
Replace many PNP digital transistors (DTCx and DCDx)
with one DMOS FET.
This P-Channel logic level enhancement mode field effect
transistor is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This
device has been designed especially for low voltage
applications as a replacement for digital transistors. Since
bias resistors are not required, this one P-channel FET can
replace several digital transistors with different bias resistors
such as the DTCx and DCDx series.
Mark:302
S
D
G
SOT-23 SuperSOTTM-8 SOIC-16
SO-8 SOT-223
SuperSOTTM-6
© 1997 Fairchild Semiconductor Corporation
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -25 V
∆BVDSS/∆TJBreakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 o C-20 mV / oC
IDSS Zero Gate Voltage Drain Current VDS = -20 V, VGS = 0 V -1 µA
TJ = 55°C -10 µA
IGSS Gate - Body Leakage Current VGS = -8 V, VDS= 0 V -100 nA
ON CHARACTERISTICS (Note)
∆VGS(th)/∆TJGate Threshold Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC1.9 mV / oC
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA-0.65 -1 -1.5 V
RDS(ON) Static Drain-Source On-Resistance VGS = -2.7 V, ID = -0.05 A10.6 13 Ω
VGS = -4.5 V, ID = -0.2 A7.9 10
TJ =125°C 12 18
ID(ON) On-State Drain Current VGS = -2.7 V, VDS = -5 V -0.05 A
gFS Forward Transconductance VDS = -5 V, ID= -0.2 A 0.135 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = -10 V, VGS = 0 V,
f = 1.0 MHz 11 pF
Coss Output Capacitance 7 pF
Crss Reverse Transfer Capacitance 1.4 pF
SWITCHING CHARACTERISTICS (Note)
tD(on)Turn - On Delay Time VDD = -6 V, ID = -0.2 A,
VGS = -4.5 V, RGEN = 50 Ω5 12 ns
trTurn - On Rise Time 8 16 ns
tD(off) Turn - Off Delay Time 9 18 ns
tfTurn - Off Fall Time 5 10 ns
QgTotal Gate Charge VDS = -5 V, ID = -0.2 A,
VGS = -4.5 V 0.22 0.31 nC
Qgs Gate-Source Charge 0.11 nC
Qgd Gate-Drain Charge 0.04 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
ISMaximum Continuous Drain-Source Diode Forward Current -0.2 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.2 A (Note)-1 -1.5 V
Note:
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDV302P REV. F
FDV302P REV. F
01234
0
0.05
0.1
0.15
0.2
-V , DRAIN-SOURCE VOLTAGE (V)
-I , DRAIN-SOURCE CURRENT (A)
V = -5.0V
GS
DS
D
-4.5
-2.7
-2.5
-2.0
-3.0
-3.5
-4.0
00.05 0.1 0.15 0.2
0.5
1
1.5
2
-I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
R , NORMALIZED
V = -2.0 V
GS
D
DS(ON)
-3.5
-4.5
-2.7
-2.5
-3.0
-4.0
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
0.5 11.5 22.5 3
0
0.02
0.04
0.06
0.08
-V , GATE TO SOURCE VOLTAGE (V)
-I , DRAIN CURRENT (A)
V = -5V
DS
GS
D
T = -55°C
A
125°C
25°C
Figure 5. Transfer Characteristics.
0.2 0.4 0.6 0.8 11.2
0.0001
0.001
0.01
0.1
0.5
-V , BODY DIODE FORWARD VOLTAGE (V)
-I , REVERSE DRAIN CURRENT (A)
T = 125°C
J
25°C
-55°C
V = 0V
GS
SD
S
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
Figure 4. On Resistance Variation with
Gate-To- Source Voltage.
-50 -25 025 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = -2.7V
GS
I = -0.05A
D
012345678
0
5
10
15
20
25
-V ,GATE TO SOURCE VOLTAGE (V)
R ,ON-RESISTANCE (OHM)
GS
DS(ON)
I = -0.05A
D
T = 25°C
A 125 °C
FDV302P REV. F
0.001 0.01 0.1 110 100 300
0
1
2
3
4
5
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R =357° C/W
T = 25°C
θJA
A
Figure 10. Single Pulse Maximum Power
Dissipation.
0.0001 0.001 0.01 0.1 110 100 300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
Duty Cycle, D = t /t
1 2
R (t) = r(t) * R
R = 357 °C/W
θJA
θJA
θJA
T - T = P * R (t)
θJA
A
J
P(pk)
t
1 t
2
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Figure 11. Transient Thermal Response Curve.
0.1 0.3 1 2 5 10 15 25
1
2
3
5
10
15
25
-V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0 V
GS
C
oss
C
rss
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical And Thermal Characteristics
00.1 0.2 0.3 0.4 0.5
0
2
4
6
8
Q , GATE CHARGE (nC)
-V , GATE-SOURCE VOLTAGE (V)
g
GS
V = -5V
DS -10
-15
I = -0.2A
D
12 5 10 15 20 30 40
0.01
0.02
0.05
0.1
0.2
0.5
1
- V , DRAIN-SOURCE VOLTAGE (V)
-I , DRAIN CURRENT (A)
RDS(ON) LIMIT
D
DC
DS
1s
100ms
1ms
10s
V = -2.7V
SINGLE PULSE
R = 357 °C/W
T = 25°C
GS
A
θJA
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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