November 1994
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright © Harris Corporation 1992 12-132
SEMICONDUCTOR
2N7316D, 2N7316R
2N7316H
Radiation Hardened
P-Channel Power MOSFETs
Package
TO-204AA
Symbol
Features
11A, -100V, RDS(on) = 0.300
Second Generation Rad Hard MOSFET Results From New Design Concepts
Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
Photo Current - 3.0nA Per-RAD(Si)/sec Typically
Neutron - Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Single Event - Typically Survives 1E5ions/cm2Having an
LET 35MeV/mg/cm2and a Range 30µm at 80% BVDSS
Description
The Harris Semiconductor Sector has designed a series of SECOND GENERA-
TION hardened power MOSFETs of both N and P channel enhancement types
with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m.
Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron
hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V prod-
uct. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current lim-
iting and 2E12 with current limiting. Heavy ion survival from signal event drain
burn-out exists for linear energy transfer (LET) of 35 at 80% of rated voltage.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-
19500. Contact the Harris Semiconductor High-Reliability Marketing group for any
desired deviations from the data sheet.
File Number 3241
REGISTRATION PENDING
Currently Available as FRM9140(D, R, H)
Absolute Maximum Ratings (TC = +25oC) Unless Otherwise Specified
2N7316D, R, H UNITS
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS -100 V
Drain-Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -100 V
Continuous Drain Current
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID 11
7A
A
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 33 A
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Maximum Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125
50
1.0
W
W
W/oC
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM 33 A
Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS 11 A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 33 A
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG -55 to +150 oC
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC
12-133
Specifications 2N7316D, 2N7316R, 2N7316H - Registration Pending
Pre-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS
LIMITS
UNITSMIN MAX
Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA -100 - V
Gate-Threshold Volts VGS(th) VDS = VGS, ID = 1mA -2.0 -4.0 V
Gate-Body Leakage Forward IGSSF VGS = -20V - 100 nA
Gate-Body Leakage Reverse IGSSR VGS = +20V - 100 nA
Zero-Gate Voltage
Drain Current IDSS1
IDSS2
IDSS3
VDS = -100V, VGS = 0
VDS = -80V, VGS = 0
VDS = -80V, VGS = 0, TC = +125oC
-
-
-
1
0.025
0.25 mA
Rated Avalanche Current IAR Time = 20µs - 33 A
Drain-Source On-State Volts VDS(on) VGS = -10V, ID = 11A - -3.47 V
Drain-Source On Resistance RDS(on) VGS = -10V, ID = 7A - 0.300
Turn-On Delay Time td(on) VDD = -50V, ID = 11A - 64
ns
Rise Time tr Pulse Width = 3µs - 236
Turn-Off Delay Time td(off) Period = 300µs, Rg = 25- 232
Fall Time tf 0 VGS 10 (See Test Circuit) - 132
Gate-Charge Threshold QG(th)
VDD = -50V, ID = 11A
IGS1 = IGS2
0 VGS 20
210
ncGate-Charge On State QG(on) 26 104
Gate-Charge Total QGM 53 214
Plateau Voltage VGP -3 -12 V
Gate-Charge Source QGS 7 30 nc
Gate-Charge Drain QGD 9 36
Diode Forward Voltage VSD ID =11A, VGD = 0 -0.6 -1.8 V
Reverse Recovery Time TT I = 11A; di/dt = 100A/µs - TBD ns
Junction-To-Case Rθjc - 1.0 oC/W
Junction-To-Ambient Rθja Free Air Operation - 30
FIGURE 1. SWITCHING TIME TESTING FIGURE 2. CLAMPED INDUCTIVE SWITCHING, ILM
VDD
RL
V1
Rg
VDS
DUT
IL
VC
E1
L
0.06
E1 = 0.5 BVDSS VC = 0.75 BVDSS
12-134
Specifications 2N7316D, 2N7316R, 2N7316H - Registration Pending
Post-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETER SYMBOL TYPE TEST CONDITIONS
LIMITS
UNITSMIN MAX
Drain-Source
Breakdown Volts (Note 4, 6) BVDSS 2N7316D, R VGS = 0, ID = 1mA -100 - V
(Note 5, 6) BVDSS 2N7316H VGS = 0, ID = 1mA -95 - V
Gate-Source
Threshold Volts (Note 4, 6) VGS(th) 2N7316D, R VGS = VDS, ID = 1mA -2.0 -4.0 V
(Note 3, 5, 6) VGS(th) 2N7316H VGS = VDS, ID = 1mA -2.0 -6.0 V
Gate-Body
Leakage Forward (Note 4, 6) IGSSF 2N7316D, R VGS = -20V, VDS = 0 - 100 nA
(Note 5, 6) IGSSF 2N7316H VGS = -20V, VDS = 0 - 200 nA
Gate-Body
Leakage Reverse (Note 2, 4, 6) IGSSR 2N7316D, R VGS = 20V, VDS = 0 - 100 nA
(Note 2, 5, 6) IGSSR 2N7316H VGS = 20V, VDS = 0 - 200 nA
Zero-Gate Voltage
Drain Current (Note 4, 6) IDSS 2N7316D, R VGS = 0, VDS = -80V - 25 µA
(Note 5, 6) IDSS 2N7316H VGS = 0, VDS = -80V - 100 µA
Drain-Source
On-State Volts (Note 1, 4, 6) VDS(on) 2N7316D, R VGS = -10V, ID = 11A - -3.47 V
(Note 1, 5, 6) VDS(on) 2N7316H VGS = -16V, ID = 11A - -5.21 V
Drain-Source
On Resistance (Note 1, 4, 6) RDS(on) 2N7316D, R VGS = -10V, ID = 7A - 0.300
(Note 1, 5, 6) RDS(on) 2N7316H VGS = -14V, ID = 7A - 0.450
NOTES:
1. Pulse test, 300µs max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13
5. Gamma = 1000KRAD(Si). Neutron = 3E13
6. Insitu Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 5/19/90 on TA 17741 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, HARRIS Application note AN-8831, Oct. 1988
12-135
2N7316D, 2N7316R, 2N7316H - Registration Pending
Typical Performance Characteristics