
Voltage: 1000 V
Current: 1.0 A
RoHS Device
Dimensions in inches and (millimeter)
DO-41
Features
- Low drop down voltage
- High current capability
- Low reverse leakage.
- High forward surge current capability.
Mechanical data
- Case: JEDEC DO-41 molded plastic
- Epoxy: UL 94V-0 rate flame retardant
- Polarity: Color band denotes cathode end
- Terminals: Solderable per MIL-STD-750
method 2026.
- Mounting position: Any
- Weight: 0.34 grams(approx. )
A1N4007G-G
Page 1
AQW-BG001
General Purpose Silicon Rectifiers
REV:A
Comchip Technology CO., LTD.
0.205(5.20)
1.0(25.40) Min.
0.107(2.70)
0.034(0.86)
0.028(0.70)
0.080(2.00)
0.160(4.20)
1.0(25.40) Min.
- Glass passivated chip junction.
Maximum Ratings and Electrical Characteristics (at Ta=25°C unless otherwise noted)
Maximum RMS voltage
Unit
Symbol
Parameter
I(AV)
VRMS
Conditions
1
700 V
Value
Maximum recurrent peak reverse voltage VRRM 1000 V
Maximum average forward rectified current see figure 1
Maximum instantaneous forward voltage
Typical thermal resistance
@IF = 1A
10 pF
Peak forward surge current IFSM 30
A
CJ
Operating junction temperature range
RΘJA 45 °C/W
Typical junction Capacitance
TJ-55 ~ +125 °C
Storage temperature range TSTG -55 ~ +150 °C
Maximum DC blocking voltage VDC 1000 V
8.3mS single half sine-wave
superimposed on rated load
(JEDEC Method) TL=110°C
A
VF1.1 V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25°C
TA = 125°C
IR
5
50
μA
Junction to ambient
VR = 4V, f = 1MHz
- Comply with AEC-Q101
Circuit diagram
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Company reserves the right to improve product design , functions and reliability without notice.