© 2004 IXYS All rights reserved
VCES = 1700 V
IC25 = 26 A
VCE(sat) = 5.2 V
tfi(typ) = 50 ns
IXGR 32N170AH1
G = Gate, C = Collector,
E = Emitter
Features
zElectrically Isolated tab
zHigh current handling capability
zMOS Gate turn-on
- drive simplicity
zRugged NPT structure
zMolding epoxies meet UL 94 V-0
flammability classification
Applications
zCapacitor discharge & pulser circuits
zAC motor speed control
zDC servo and robot drives
zDC choppers
zUninterruptible power supplies (UPS)
zSwitched-mode and resonant-mode
power supplies
DS99233(11/04)
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
BVCES IC= 1mA, VGE = 0 V 1700 V
VGE(th) IC= 250 µA, VCE = VGE 3.0 5.0 V
ICES VCE = 0.8 • VCES 500 µA
VGE = 0 V Note 1 TJ = 125°C8mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 15 V 4.2 5.2 V
TJ = 125°C 4.8 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1700 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ1700 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C26A
IC90 TC= 90°C17A
IF90 14 A
ICM TC= 25°C, 1 ms 200 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 5Ω ICM = 70 A
(RBSOA) Clamped inductive load @ 0.8 VCES
tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω 10 µs
PCTC= 25°C 200 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
F
CMounting force with clamp 22...130/5...30 N/lb
VISOL 50/60 Hz, 1 minute 2500 ~V
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Weight 5g
High Voltage
IGBT with Diode
Advance Technical Information
Electrically Isolated Tab
ISOLATED TAB
E
G
C
ISOPLUS247 (IXGR)
E153432
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
gfs IC= IC25; VCE = 10 V 25 33 S
Note 2
Cies 3700 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 180 pF
Cres 44 pF
Qg155 nC
Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 30 nC
Qgc 51 nC
td(on) 46 ns
tri 57 ns
td(off) 270 500 ns
tfi 50 100 ns
Eoff 1.5 3.0 mJ
td(on) 48 ns
tri 42 ns
Eon 2.5 mJ
td(off) 300 ns
tfi 70 ns
Eoff 2.4 mJ
RthJC 0.65 K/W
RthCK 0.15 K/W
Inductive load, TJ = 125°°
°°
°C
IC = IC90, VGE = 15 V
RG = 2.7 Ω, VCE = 0.8 VCES
Note 3
Inductive load, TJ = 25°°
°°
°C
IC = IC90, VGE = 15 V
RG = 2.7 Ω, VCE = 0.8 VCES
Note 3
IXGR 32N170AH1
Notes: 1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
4. See DH60-18A and IXGH32N170A datasheets for additional
characteristics
ISOPLUS247 Outline
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = 20A, VGE = 0 V, Note 2 2.7 V
IRM IF = 50A, VGE = 0 V, -diF/dt = 800 A/µs50A
trr VR = 600 V 150 ns
RthJC 1.5 K/W
See IXGX32N170AH1 for
charcteristic curves
