Photomicrosensor (Transmissive) EE-SX1055 Be sure to read Precautions on page 25. Dimensions Features Note: All units are in millimeters unless otherwise indicated. * Longer leads allow the sensor to be mounted to a 1.6-mm thick board. * 5.4-mm-tall compact model. * PCB mounting type. * High resolution with a 0.5-mm-wide aperture. 0.2 max. 0.2 max. Absolute Maximum Ratings (Ta = 25C) Four, 5 0.50.05 Item White band Emitter Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr -25C to 85C Storage Tstg -30C to 100C Tsol 260C (see note 3) Optical axis 5.40.2 3.60.5 Detector Four, 0.5 Four, 0.25 Cross section AA Ambient temperature Internal Circuit Soldering temperature K C A Dimensions E Terminal No. A K C E Unless otherwise specified, the tolerances are as shown below. Name Anode Cathode Collector Emitter Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. 0.3 3 < mm 6 6 < mm 10 0.375 0.45 10 < mm 18 0.55 18 < mm 30 0.65 Rated value Forward current Electrical and Optical Characteristics (Ta = 25C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 A typ., 10 A max. VR = 4 V Peak emission wavelength P 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector-Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength P 850 nm typ. VCE = 10 V Rising time tr 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Falling time tf 4 s typ. VCC = 5 V, RL = 100 , IL = 5 mA Detector 42 EE-SX1055 Photomicrosensor (Transmissive) Engineering Data Ambient temperature Ta (C) Ta = 25C Light current IL (mA) IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Ta = 25C Ta = 70C Forward current IF (mA) Forward voltage VF (V) Collector-Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Ta = -30C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Ta = 25C VCE = 10 V Light current IL (mA) PC Light Current vs. Forward Current Characteristics (Typical) Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx IF = 20 mA VCE = 5 V Dark current ID (nA) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) (Center of optical axis) 80 Distance d (mm) d 60 40 20 0 -2.0 Load resistance RL (k) IF = 20 mA VCE = 10 V Ta = 25C 100 (Center of optical axis) IF = 20 mA VCE = 10 V Ta = 25C Relative light current IL (%) Response time tr, tf (s) Relative light current IL (%) 120 VCC = 5 V Ta = 25C -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SX1055 Photomicrosensor (Transmissive) 43