2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm * High breakdown voltage: VCBO = 100 V * Low saturation voltage: VCE (sat) = 1.2 V (max) (IC = 5 A, IB = 1 A) : VEBO = 18 V * High speed: tf = 1 s (typ.) (IC = 5 A, IB = 0.5 A) * High DC current gain: hFE = 200 (min) (VCE = 5 V, IC = 0.5 A) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 18 V DC IC 6 Pulse ICP 12 IB 2 A PC 40 W TOSHIBA Tj 150 C Weight: 5.8 g (typ.) Tstg -55 to 150 C Collector current Base current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range 1 A JEDEC JEITA 2-16F1A 2003-02-04 2SD2440 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 10 A Collector cut-off current ICER VCE = 80 V, RBE = 50 5 mA Emitter cut-off current IEBO VEB = 15 V, IC = 0 2 A V (BR) CEO IC = 50 mA, IB = 0 60 V VCE = 5 V, IC = 0.5 A 200 900 VCE = 5 V, IC = 5 A 20 100 Collector-emitter breakdown voltage hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage VCE (sat) IC = 5 A, IB = 1 A 1.2 V Base-emitter saturation voltage VBE (sat) IC = 5 A, IB = 1 A 2.5 V VCE = 10 V, IC = 0.5 A 5 MHz VCB = 10 V, IE = 0, f = 1 MHz 71 pF 1 2 2 4 1 3 fT Collector output capacitance Cob Storage time tstg 20 s Input IB2 Switching time ton IB1 Turn-on time IB1 Output IB2 10 Transition frequency s VCC = 50 V Fall time tf IB1 = -IB2 = 0.5 A, duty cycle 1% Note: hFE (1) classification GR: 200 to 400, BL: 300 to 600, V: 450 to 900 Marking D2440 Product No. Lot No. hFE classification (GR/BL/V) Explanation of Lot No. Month of manufacture (January to December are denoted by letters A to L respectively.) Year of manufacture (Last decimal digit of the year of manufacture) 2 2003-02-04 2SD2440 IC - VCE IC - VBE 16 12 Common emitter (A) 3 10 1 IC 2 0.5 Collector current Collector current IC (A) Tc = 25C 12 Common emitter VCE = 5 V 8 0.3 0.2 0.1 4 50 m 8 6 4 2 20 m 125 IB = 5 mA 0 0 2 4 6 8 Collector-emitter voltage VCE 0 0 10 Tc = -55C 25 0.4 0.8 hFE - IC Common emitter Collector-emitter saturation voltage VCE (sat) (V) hFE DC current gain 25 Tc = -55C 50 30 10 0.03 0.1 0.3 Collector current 1 IC 3 10 20 3 IC/IB = 5 1 0.3 Tc = 125C 0.1 25 0.03 -55 0.01 (A) 0.005 0.01 0.03 0.1 0.3 1 Collector current 3 IC 10 20 (A) VBE (sat) - IC 5 Common emitter 3 IC/IB = 5 rth (t) - tw Tc = -55C 1 0.5 125 0.3 25 0.1 0.03 0.1 0.3 Collector current 1 IC 3 10 20 Transient thermal resistance rth (t) (C/W) 10 Base-emitter saturation voltage VBE (sat) (V) (V) Common emitter VCE = 5 V 100 0.05 0.01 2.4 VCE (sat) - IC 125 5 0.01 2.0 10 1000 300 1.6 Base-emitter voltage VBE (V) 3000 500 1.2 (A) 10 Curves should be applied in 5 thermal limited area. * Infinite heat sink 3 1 0.5 0.3 0.1 0.001 0.01 0.1 Pulse width 3 1 tw 10 (s) 2003-02-04 2SD2440 Safe Operating Area 30 IC max (pulsed)* 1 ms* 10 (A) 3 Collector current IC IC max (continuous) 5 10 ms* DC operation Tc = 25C 1 100 ms* 0.5 0.3 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.1 1 3 5 VCEO max 10 30 Collector-emitter voltage VCE 50 100 (V) 4 2003-02-04 2SD2440 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2003-02-04