2SD2440
2003-02-04
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2440
Switching Application
• High breakdown voltage: VCBO = 100 V
: VEBO = 18 V
• Low saturation voltage: VCE (sat) = 1.2 V (max) (IC = 5 A, IB = 1 A)
• High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A)
• High DC current gai n: hFE = 200 (min) (VCE = 5 V, IC = 0.5 A)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 100 V
Collector-emitter voltage VCEO 60 V
Emitter-base voltage VEBO 18 V
DC IC 6
Collector current
Pulse ICP 12
A
Base current IB 2 A
Collector power dissipation
(Tc = 25°C)
PC 40 W
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-16F1A
Weight: 5.8 g (typ.)
2SD2440
2003-02-04
2
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 100 V, IE = 0 ― ― 10 µA
Collector cut-off current ICER V
CE = 80 V, RBE = 50 Ω ― ― 5 mA
Emitter cut-off current IEBO V
EB = 15 V, IC = 0 ― ― 2 µA
Collector-emitter breakdown voltage V (BR) CEO I
C = 50 mA, IB = 0 60 ― ― V
hFE (1)
(Note)
VCE = 5 V, IC = 0.5 A 200 ― 900
DC current gain
hFE (2) V
CE = 5 V, IC = 5 A 20 ― 100
Collector-emitter saturation voltage VCE (sat) IC = 5 A, IB = 1 A ― ― 1.2 V
Base-emitter saturation voltage VBE (sat) I
C = 5 A, IB = 1 A ― ― 2.5 V
Transition frequency fT V
CE = 10 V, IC = 0.5 A ― 5 ― MHz
Collector output capacitance Cob V
CB = 10 V, IE = 0, f = 1 MHz ― 71 ― pF
Turn-on time ton ― 1 2
Storage time tstg ― 2 4
Switching time
Fall time tf
IB1 = −IB2 = 0.5 A, duty cycle ≤ 1%
― 1 3
µs
Note: hFE (1) classification GR: 200 to 400, BL: 300 to 600, V: 450 to 900
Marking
Explanation of Lot No.
IB1
20 µs
VCC = 50 V
IB2
Output
10 Ω
IB2
IB1
Input
Month of manufacture (January to December are denoted by letters A to L respectively.)
Year of manufacture (Last decimal digit of the year of manufacture)
Product No.
Lot No.
D2440
hFE classification (GR/BL/V)
2SD2440
2003-02-04
3
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Collector current IC (A)
hFE – IC
DC current gain hFE
Collector current IC (A)
VBE (sat) – IC
Base-emitter saturation voltage
VBE (sat) (V)
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
Collector current IC (A)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Pulse width tw (s)
rth (t) – tw
Transient thermal resistance
rth (t) (°C/W)
16
12
8
4
6 4 8 10 2
0
0.2
50 m
2
IB = 5 mA
1
3
0.5
0.3
20 m
0.1
Common emitter
Tc = 25°C
0 0
12
Tc = −55°C
25
4
6
Common emitter
VCE = 5 V
125
8
0 0.4 1.2 2.4 0.8 1.6 2.0
2
10
Tc = −55°C
25
Common emitter
VCE = 5 V
125
0.01
5
0.1 1 0.03 0.3 3 10 20
3000
30
300
1000
100
10
50
500
10
0.01
3
0.03
0.005
0.1 1
Tc = 125°C
25
−55
Common emitter
IC/IB = 5
0.3
1
0.03 0.3 3
0.1
10 20
0.01
Tc = −55°C
25
Common emitter
IC/IB = 5
125
0.01
0.05
0.1 1 0.03 0.3 3 10 20
0.3
3
10
1
0.1
0.5
5
0.1
0.001
0.01 1 10
1
5
10
0.1
3
0.5
0.3
Curves should be applied in
thermal limited area.
• Infinite heat sink
2SD2440
2003-02-04
4
Collector current IC (A)
Collector-emitter voltage VCE (V)
Safe Operating Area
50 3 1 30 100
1
30
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
IC max (continuous)
IC max (pulsed)*
DC operation
Tc = 25°C
1 ms*
0.1
0.3
10
0.5
5
3
5
10
100 ms*
10 ms*
VCEO max
2SD2440
2003-02-04
5
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
000707EA
A
RESTRICTIONS O N PRODUCT USE
