1Rectifier Device Data
  
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features epitaxial construction with
oxide passivation and metal overlap contact. Ideally suited for use as rectifiers
in low–voltage, high–frequency inverters, free wheeling diodes, and polarity
protection diodes.
Extremely Low vF
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16 from case
Shipped in plastic bags, 5,000 per bag
Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the
part number
Polarity: Cathode indicated by Polarity Band
Marking: B350, B360
MAXIMUM RATINGS
Rating Symbol MBR350 MBR360 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50 60 V
Average Rectified Forward Current, TA = 65°C
(RθJA = 28°C/W, P.C. Board Mounting, see Note 3) IO3.0 A
Non–Repetitive Peak Surge Current (2)
(Surge applied at rated load conditions, half wave, single phase 60 Hz, TL = 75°C) IFSM 80 A
Operating and Storage Junction
Temperature Range (Reverse V oltage applied) TJ, Tstg
*
65 to 150°C°C
Peak Operating Junction Temperature
(Forward Current applied) TJ(pk) 150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient (see Note 3, Mounting Method 3) RθJA 28 °C/W
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2)
Characteristic Symbol MBR350 MBR360 Unit
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 Amp)
(iF = 3.0 Amp)
(iF = 9.4 Amp)
vF0.600
0.740
1.080
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)
TL = 25°C
TL = 100°C
iR0.60
20
mA
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32 from case.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1999
Order this document
by MBR350/D

SEMICONDUCTOR TECHNICAL DATA


SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
50, 60 VOLTS
CASE 267–03
PLASTIC
MBR360 is a
Motorola Preferred Device
 
2Rectifier Device Data
VR, REVERSE VOLTAGE (VOL TS)IF (AV), AVERAGE FORWARD CURRENT (AMPS)
0 2.01.0 3.0 4.0 5.0
1.0
2.0
3.0
4.0
5.0
TJ = 150
°
C
P , AVERAGE POWER DISSIPATION (WATTS)
F (AV)
dc
SQUARE
WAVE
02010 30 40 50
70
300
TJ = 25
°
C
C, CAPACITANCE (pF)
200
40
30
50
100
TA, AMBIENT TEMPERATURE (C
°
)
20 1006040 80
4.0
2.0
3.0
5.0
0
1.0
dc
SQUARE
WAVE
120 140 160
I , AVERAGE FORWARD CURRENT (AMPS)
F (AV)
VR REVERSE VOLTAGE (VOL TS)
02010 30 40
0.002
0.005
0.01
0.05
0.02
0.10
0.50
0.20
20
10
5.0
2.0
1.0
25
°
C
Figure 1. Typical Forward Voltage
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.20 0.4
5.0
0.03
0.02
0.07
0.2
0.1
20
10
3.0
2.0
1.0
0.6 0.8
0.3
0.05
0.5
0.7
I , REVERSE CURRENT (mA)
R
7.0
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
Figure 2. Typical Reverse Current*
Figure 3. Current Derating Ambient
(Mounting method #3 per note 1)
Figure 4. Power Dissipation Figure 5. Typical Capacitance
1.0 1.2 1.4
*The curves shown are typical for the highest voltage
device in the voltage grouping. T ypical reverse current
for lower voltage selections can be estimated from
these same curves if VR is sufficiently below rated VR.
50 60 80
75
°
C
100
°
C
TJ = 150
°
C
TJ = 100
°
C25
°
C
75
°
C
TJ = 150
°
C
RATED VR
R
q
JA = 28
°
C/W
0
0
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3Rectifier Device Data
TYPICAL VALUES FOR RθJA IN STILL AIR
Data shown for thermal resistance junction–to–ambient (RθJA)
for the mountings shown is to be used as typical guideline values
for preliminary engineering, or in case the tie point temperature
cannot be measured.
1
2
3
Mounting
Method
Lead Length, L (in)
1/8 1/4 1/2 3/4 RθJA
50 51 53 55 °C/W
°C/W
°C/W
58 59 61 63
28
NOTE 1 — MOUNTING DATA
ÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
Mounting Method 1
P.C. Board where available
copper surface is small.
L L
L
Mounting Method 2
Vector Push–In
Terminals T–28
L
Mounting Method 3
P.C. Board with
2–1/2 X 2–1/2
copper surface.
L = 1/2’
Board Ground Plane
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4Rectifier Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. CATHODE
2. ANODE
1
2
K
A
K
D
B
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.370 0.380 9.40 9.65
B0.190 0.210 4.83 5.33
D0.048 0.052 1.22 1.32
K1.000 ––– 25.40 –––
CASE 267–03
ISSUE C
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MBR350/D