FOR USE BY ELECTRICIANS OVERSEAS : Bakes uiA5tGeR (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English translation key given below. RK BM (Tae 05'C) z OR Te) oe RS ph Bl A eee a Te (mA) Pee (nW ) JG () Tew SAH (aA y | Ve) WRK Ae ATOR ire | tues hea | hoe | fan i t # | Beet lho tf Val elma] Vent] ima] tow | toy |Gcio} Gr) | Ge) | o Meteo ely wry Pte = o ee TYPE NUMBER USES MAXIMUM RATINGS BOBS & ORIGINAL MANUFACTURER MATERIAL AND STRUCTURE Icoo MAXIMUM VALUE AND Ves VALUE (CRITERIA FOR MEASURING I czo ) S STANDARD VALUE OF DC/PULSE hee AND Vee I. ( CRITERIA FOR MEASURING DC/PULSE Are ) fl STANDARD VALUE OF kh PARAME- TERS AND BIAS Vee , Ie (CRITERIA FOR MEASURING A PARAMETERS) = oo iy [oo I | _g INDICATES VALUE IN GROUNDED- BASE OPERATION, OTHERWISE VALUE IN EMITTER-GROUNDED OPERATION. fas OF RF CHARACTERISTIC, EXCEPT IN CASE OF * WHICH INDICATES VALUE OF f-. Cos AND roy OF RF CHARACTERIS- TICS EXCEPT IN CASE OF * IN 1r,, COLUMN WHICH INDICATES VALUE OF hie (real) OUTLINE REMARKS :ta>7): COMPLEMENTARY TO -::-- _ a BK # (Ts = 25C) = A i % tt (Ta = 25C) wm m *%/)4 %| i | HE GK | Vepo | Veso | Ic Po Tj Icso BAH | BH Mites Aheel es 4 7% hye hie hre hoe Sab Cos Tob mF cv) | cv) | ama) | mw) | Coy | Gua) [Ven(v) Vee) fe(mA)|Voa(v)|teima)| Avo | AS [eter] Catan | deed | wry [tay | 2SD1137|H at] PA siT| 100 | 4 | 44 | 4.) 150 [| 10 | 100 | 120 | 4 | 500 268 n 1138) u | 200 | 6 2A } SOW} 150 1 120 | 40 | 4 50 268 #1139 idole |] SW si| 30 | 10 | 1.54] 900 | 150 | 10 | 30 | 7000 | 2 | 150 ee Bs 50 bMS aad | erty 1141 1142 1143 1144 1 1145/= #/AF.Sw |SiEP| 60 | 6 | 5A | 900 | 150 | 1 | 50 fioo~s60o] 2 | S00 | 10 | 50 120*| 45 294 1146 1147/8) PA si.TP| 120 | 6 | 5A |30M,) 150 | 1mA| 120 | 5000} 5 | 1A] 5 | ~500 a2 *| 54 268 | > by Ce ae ae siT| 140 | 5 | 104 | 200M) 150 | 5 | 140 | 100 | 5 | TA 203 y yaa] | AF Si.EP| 100 | 15 } 20 | 200 | 125 | 1 | 60 | 1000] 10 | 2 176 # 1150) #| SW | 350 | 6 | 6A | SW.} 150 | 100 | 40 | 60 | 5 | 3A <1 pS 268 | A Hi 1b OF Si.TMe} 1500 | 5 | 5A |,22W) 130 | 100, | 750 | 40~150] 10 | 3.5A te 7S, t< 14S 102 |Z rhe #1152] at AF SiE | 55 100 | 200 | 125 | 0.5 | 18 | 500 | 12 | 2 138 1153|= /AF.sw |SiEP] 80 | 10 | 1.54] 900 | 150 | 0.1 | 40 |>4000] 2 | 500 | 10 | 50 120 * 294 eee. 1154 1155] +86] SW SiTP| 400 | 6 | 50a |300W) 150 | 2mA} 400 | 400 | 5 | 50A cides 7S? SHS 254 | Foe ty #1156 1157/4%@) AF.PA [Si TP] 80 | 10 | 4A [254.1 150 | 100 | 80 | 400 | 5 | 500 268 1158) |AF.PA.SW| | 80 | 10 | 8A | 40%.) 150 | 100 | 80 | 400 | 5 | 1A fon 0545 <0. 8uS 268 1159 1160 1161 1ie2iB | SW sit | soo | 10 | 10a |, 40W.) 150 | 10 | 400 Juco~so| 2 | 2A ieaadug 7784S 268 | xy by 163} xz] | 300 | 6 | 7A |. OM} 150 ] 5mA! 300 | 40 | 5 | 5A t<0.5pS 268 | AFA "1164 "1165 "1166