DIM500BSS06-S000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/9
www.dynexsemi.com
DS5677-1.3 February 2004
KEY PARAMETERS
VCES 600V
VCE(sat)* (typ) 2.1V
IC(max) 500A
IC(PK) (max) 1000A
*(measured at the power busbars and not the auxiliary terminals)
FEATURES
■n - Channel
■High Switching Speed
■Low Forward Voltage Drop
■Isolated Base
APPLICATIONS
■PWM Motor Control
■UPS
The Powerline range of modules includes half bridge,
chopper, bi-directional, dual and single switch configurations
covering voltages from 600V to 3300V and currents up to 3600A.
The DIM500BSS06-S000 is a single switch 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
ORDERING INFORMATION
Order as:
DIM500BSS06-S000
Note: When ordering, use complete part number.
DIM500BSS06-S000
Single Switch IGBT Module
Fig. 1 Single switch circuit diagram
Fig. 2 Module outline
Outline type code: B
(See package details for further information)
2(E)
3(G
1
)
1(C)
5(E
1
)
4(C
1
)
DIM500BSS06-S000
2/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
VGE = 0V
-
Tcase = 65˚C
1ms, Tcase = 95˚C
Tcase = 25˚C, Tj = 150˚C
VR = 0, tp = 10ms, Tvj = 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Symbol
VCES
VGES
IC
IC(PK)
Pmax
I2t
Visol
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Units
V
V
A
A
W
kA2s
kV
Max.
600
±20
500
1000
2907
TBD
2.5
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I2t value
Isolation voltage - per module
DIM500BSS06-S000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/9
www.dynexsemi.com
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M3
Electrical connections - M4
Parameter
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Internal insulation: Al2O3Clearance: 11mm
Baseplate material: Cu CTI (Critical Tracking Index): 425
Creepage distance: 20mm
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-h)
Tj
Tstg
-
Units
˚C/kW
˚C/kW
˚C/kW
˚C
˚C
˚C
Nm
Nm
Nm
Max.
43
81
15
150
125
125
5
5
2
Typ.
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
–40
3
2.5
1.1
DIM500BSS06-S000
4/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Note:
† Measured at the power busbars and not the auxiliary terminals.
L* is the circuit inductance + LM
Test Conditions
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125˚C
VGE = ±20V, VCE = 0V
IC = 20mA, VGE = VCE
VGE = 15V, IC = 375A
VGE = 15V, IC = 375A, , Tcase = 125˚C
DC
tp = 1ms
IF = 50A
IF = 500A, Tcase = 125˚C
VCE = 25V, VGE = 0V, f = 1MHz
-
-
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
Internal transistor resistance - per arm
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
ICES
IGES
VGE(TH)
VCE(sat)
†
IF
IFM
VF
†
Cies
LM
RINT
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nH
mΩ
Max.
3
15
3
7.5
2.6
2.8
500
1000
1.8
1.8
-
-
Typ.
-
-
-
5.5
2.1
2.3
-
-
1.5
1.5
54
20
0.23
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
DIM500BSS06-S000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/9
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
µC
µC
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
600
250
45
490
150
30
4
30
240
9
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
IC = 500A
VGE = ±15V
VCE = 300V
RG(ON) = RG(OFF) = 4.7Ω
L ~ 100nH
IF = 500A, VR = 300V,
dIF/dt = 2800A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
td(off)
tf
EOFF
td(on)
tr
EON
Qg
Qrr
Irr
EREC
Tcase = 125˚C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
650
500
65
550
150
50
40
265
10
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
IC = 500A
VGE = ±15V
VCE = 300V
RG(ON) = RG(OFF) = 4.7Ω
L ~ 100nH
IF = 500A, VR = 300V,
dIF/dt = 2800A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
EREC
DIM500BSS06-S000
6/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig.3 Typical output characteristics Fig.4 Typical output characteristics
Fig.4 Typical switching energy vs collector current Fig.5 Typical switching energy vs gate resistance
0
100
200
300
400
1000
012.0345
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
900
500
600
700
800
Common emitter
T
case
= 25˚C
V
ce
is measured at power
busbars and not the
auxiliary terminals
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
200
400
600
800
1000
100
300
500
700
900
0 1.0 2.0 3.0 4.0 5.0 6.0
Common emitter
T
case
= 125˚C
V
ce
is measured at power
busbars and not the
auxiliary terminals
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
0
10
20
30
40
50
60
70
80
90
0 100 200 300 400 500 600
Collector current, I
C
- (A)
Switching energy, E
sw
- (mJ)
Conditions:
T
case
= 125ºC
V
cc
= 300V
R
g
= 4.7 ohms
E
on
E
off
E
rec
0
10
20
30
40
50
60
70
80
4 6 8 10 11 12 13 14 15 16
Gate resistance, Rg - Ohms
Switching energy, Esw - (mJ)
975
Eoff
Eon
Erec
Conditions:
Tcase = 125ºC
Vcc = 300V
IC = 500A
DIM500BSS06-S000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/9
www.dynexsemi.com
Fig.8 Transient thermal impedance
Fig.7 Reverse bias safe operating area
Fig.6 Diode typical forward characteristics
Fig.7 Diode reverse bias safe operating area
0
100
200
300
400
500
600
700
800
900
1000
00.5 1.0 1.5 2.0 2.5 3.0
Foward voltage, V
F
- (V)
Foward current, I
F
- (A)
T
j
= 25˚C
T
j
= 125˚C
V
F
is measured at power busbars
and not the auxiliary terminals
0
100
200
300
400
600
500
700
800
900
1000
1100
1200
0 200 400 600 800
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
T
j
= 125˚C
V
ge
= ±15V
R
g
= 4.7 Ohms
Module I
C
Chip I
C
0
50
100
150
200
250
300
350
400
0 100 200 300 400 500 600 700
Reverse voltage, V
R
- (V)
Reverse recovery current, I
rr
- (A)
T
j
= 125˚C
1
10
100
1000
0.001 0.01 10.1 10
Pulse width, t
p
- (s)
Transient thermal impedance, Z
th (j-c)
- (°C/kW )
Transistor
Diode
IGBT R
i
(˚C/KW)
τ
i
(ms)
Diode R
i
(˚C/KW)
τ
i
(ms)
1
1.2705
0.1069
2.3216
0.0895
2
5.0322
4.363
12.9104
2.6571
3
6.8123
21.9182
12.0804
17.3886
4
40.8577
92.4022
73.9553
71.8108
DIM500BSS06-S000
8/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Fig. 15 Package details
Nominal weight: 475g
Module outline type code: B
2(E)
3(G
1
)
1(C)
5(E
1
)
4(C
1
)
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
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Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
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