VS-15EVH06HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt(R) FEATURES eSMP(R) Series * Hyperfast recovery time, reduced Qrr and soft recovery Heatsink k * For PFC CRM / CCM operation k * Low forward voltage drop, low power losses * Low leakage current 1 1 Pin 1 2 * Meets MSL level 1, per LF maximum peak of 260 C 2 Pin 2 J-STD-020, * AEC-Q101 qualified - Automotive ordering code: base P/NHM3, meets JESD 201 class 2 whisker test SlimDPAK (TO-252AE) DESIGN SUPPORT TOOLS AVAILABLE * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3D 3D 3D Models TYPICAL APPLICATIONS These devices are intended for use in PFC boost stage in the AC/DC section of SMPS inverters, or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. PRIMARY CHARACTERISTICS IF(AV) 15 A VR 600 V VF at IF 1.2 V trr (typ.) 20 ns MECHANICAL DATA TJ max. 175 C Package SlimDPAK (TO-252AE) Circuit configuration Single Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Base PN/HM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated J-STD-002 and JESD 22-B102 leads, solderable per ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 140 C 15 Non-repetitive peak surge current IFSM TJ = 25 C 120 Operating junction and storage temperatures TJ, TStg A -55 to +175 C ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 15 A - 1.6 2.10 1.6 IR = 100 A IF = 15 A, TJ = 150 C - 1.2 VR = VR rated - - 20 TJ = 150 C, VR = VR rated - - 500 VR = 600 V - 17 - UNITS V A pF Revision: 11-Jun2019 Document Number: 96158 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15EVH06HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr MIN. TYP. MAX. IF = 1 A, dIF/dt = 50 A/s, VR = 30 V TEST CONDITIONS - 30 - IF = 1 A, dIF/dt = 100 A/s, VR = 30 V - 20 - IF = 0.5 A, IR = 1 A, IRR = 0.25 A - - 30 TJ = 25 C - 42 - TJ = 125 C - 90 - IF = 15 A dIF/dt = 500 A/s VR = 400 V TJ = 25 C TJ = 125 C - 7.5 - - 13.5 - UNITS ns A TJ = 25 C - 140 - TJ = 125 C - 550 - MIN. TYP. MAX. UNITS -55 - 175 C - - 1.25 C/W nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Thermal resistance, junction to case RthJC Marking device Case style SlimDPAK (TO-252AE) 15EVH06 1000 100 175 C IR - Reverse Current (A) IF - Instantaneous Forward Current (A) TEST CONDITIONS 10 TJ = 175 C 1 TJ = 150 C 100 150 C 10 1 0.1 25 C 0.01 TJ = 25 C 0.1 0.001 0 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 11-Jun2019 Document Number: 96158 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15EVH06HM3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 100 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (C/W) 10 Single pulse (thermal resistance) 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 DC 0.01 0.0001 PDM t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 180 35 170 30 RMS limit Average Power Loss (W) Allowable Case Temperature (C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 160 150 140 DC Square wave (D = 0.50) 80 % rated VR applied 130 25 20 15 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 10 5 See note (1) 120 0 0 5 10 15 20 25 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 0 5 10 15 20 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 11-Jun2019 Document Number: 96158 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15EVH06HM3 www.vishay.com Vishay Semiconductors 140 600 120 500 125 C 400 Qrr (nC) trr (ns) 100 25 C 80 125 C 300 60 200 40 100 25 C 20 0 100 200 300 400 500 100 200 300 400 dIF/dt (A/s) dIF/dt (A/s) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt 500 (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 11-Jun2019 Document Number: 96158 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15EVH06HM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 15 E V H 06 H M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (15 = 15 A) 3 - Circuit configuration: E = single die 4 - V = SlimDPAK (TO-252AE) 5 - Process type: H = hyperfast recovery 6 - Voltage code (06 = 600 V) 7 - H = AEC-Q101 qualified 8 - Environmental digit: M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY PACKAGING DESCRIPTION VS-15EVH06HM3/I 0.20 1 4500 13"diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96081 Part marking information www.vishay.com/doc?96085 Packaging information www.vishay.com/doc?88869 SPICE model www.vishay.com/doc?96609 Revision: 11-Jun2019 Document Number: 96158 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SlimDPAK DIMENSIONS in inches (millimeters) SlimDPAK 0.055 (1.40) 0.047 (1.20) 0.249 (6.32) 0.239 (6.08) 0.016 (0.41) 0.010 (0.25) 0.028 (0.70) 0.012 (0.30) 0.265 (6.72) 0.255 (6.48) 0.370 (9.40) 0.339 (8.60) 0.008 0.000 0.055 0.039 0.090 NOM. (2.29) (0.20) (0.00) (1.40) (1.00) 0.180 NOM. (4.57) Mounting Pad Layout 0.240 MIN. (6.10) 0.224 (5.70) 0.209 (5.30) 0.205 NOM. (5.20) 0.235 MIN. (5.97) 0.386 REF. (9.80) 0.075 MIN. (1.90) 0.035 (0.90) 0.028 (0.70) 0.090 NOM. (2.29) 0.055 MIN. (1.40) Revision: 14-Mar-17 Document Number: 96081 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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