T4-LDS-0245-2, Rev. 1 (5/31/13) ©2013 Microsemi Corporation Page 1 of 5
1N4614-1 – 1N4627-1e3,
1N4099-1 – 1N4135-1e3
Availa ble on
commercial
versions
500 mW Metallurgically Bonded
Glass Zener Diodes
Qualified per MIL-PRF-19500/435
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
DESCRIPTION
The 1N4099-1 through 1N4135-1 and 1N4614-1 through 1N4627-1 series are 500 mW, Zener
voltage regulators in the axial-leaded, glass DO-35 package. Voltages from 1.8 to 100V in
5%, 2%, and 1% tolerances are available. They are constructed with an internal metallurgical
bond and are mil-qualified up to the JANS level for high reliability applications.
DO-35 (DO-204AH)
Package
Also available in:
DO-213AA package
(surface mount)
1N4099UR-1 – 1N4135UR-1
and
1N4614UR-1 – 1N4627UR-1
DO-216 package
(tabbed surface mount)
1PMT4099 – 1PMT4135 and
1PMT4614 – 1PMT4627
Important: For the latest i nformation, vis it our website http://www.microsemi.com.
FEATURES
• JEDEC registered 1N4099 through 1N4135 and 1N4614 through 1N4627 series.
• Interna l meta llurg ic al bond.
• Max noise density 40 μV / √Hz for 6.8 V and up. Fal ls quickly to 1 μV / √Hz at lower voltages.
• JAN, JANTX, JANTXV and JANS qualifications are availa ble per MIL-PRF-19500/435.
• RoHS compliant versions available (commercial grade only).
APPLICA TIONS / BENEFITS
• Flexible axial-lead mounting ter minals.
• Regulates voltage over broad ranges of current and temperature.
• Extensive selection from 1.8 to 100 volts.
• Voltage tolerances of 5% (standard), 2% and 1% are available.
• Hermetically sealed surface mount package.
• Non-sensitive to ESD per MIL-STD-750 method 1020.
• Minimal capacitance (see Figure 3).
• Inherently radiation hard as described in Microsemi MicroNote 050.
MAXIMUM RATINGS @ TC = +25 ºC unless otherwise specified
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +175
oC
Thermal Resi stan ce Jun cti on-to-Ambient (1)
RӨJA
300
oC/W
Thermal Resi stan ce Jun cti on-to-Lead @ 3/8 (10 mm)
lead length from body
RӨJL 250
o
C/W
Rated Average Power Dissipation (2)
PM(AV)
0.5
W
Forward Voltage @ 200 mA
VF
1.1
V
Solder Temperature @ 10 s
260
oC
Notes: 1. When mounted on FR4 PC board (1 oz Cu) with 4 mm2 copper pads and track width 1 mm, length 25
mm.
2. The 0.5 W should be linearly derated starting at TL = 50 °C and goes t o zero at 175 °C. For ambient TA
conditi on on a typical PC board, it linearly derates from 500 mW starting at 25 °C and goes to zero at
175 °C (see Fi gure 2).
T4-LDS-0245-2, Rev. 1 (5/31/13) ©2013 Microsemi Corporation Page 2 of 5
1N4614-1 – 1N4627-1e3,
1N4099-1 – 1N4135-1e3
MECHANICAL and PACKAGING
• CASE: Hermetically sealed axial-lead glass DO-35 (DO-204AH) style package.
• TERMINALS: Tin-lead or RoHS compliant annealed matte-tin (on commercial grade only) plating. Solderable per MIL-STD-750,
method 2026.
• POLARITY: Cathode indicated by band. The diode is to be operated with the banded end positive with respect to the opposite
end for Zener regulation.
• MARKING: Part number.
• TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities.
• WEIGHT: Approximately 0.2 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 1N4099 C -1 e3
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
JANS = JANS level
Blank = Commercial
JEDEC type number
(See Electrical Characteristics
table)
Zener Voltage Tolerance
Blank = 5%
C = 2%
D = 1%
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Metallurgically Bonded
SYMBOLS & DEFINITIONS
Symbol
Definition
αVZ
Temperature Coefficient of Regulator Voltage: The change in regulator voltage divided by the change in temperature
that caused it expressed in %/C or mV/°C.
IR
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
I
Z
, I
ZT
, I
ZK
Regulator Current: The dc regulator current (I
Z
), at a specified test point (I
ZT
), near breakdown knee (I
ZK
).
IZM
Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating.
ND
Noise Density: The noise generated over a specified frequency bandwidth usually specified in terms of mV/ √Hz.
VR
Reverse Voltage: The reverse voltage dc value, no alternating component.
VZ
Zener Voltage: The Zener voltage the device will exhibit at a spe cifi ed curr e nt (IZ) in its breakdown region.
ZZT or ZZK
Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a
specified rms current modulation (typically 10% of IZT or IZK) and superimposed on IZT or IZK respectively.
T4-LDS-0245-2, Rev. 1 (5/31/13) ©2013 Microsemi Corporation Page 3 of 5
1N4614-1 – 1N4627-1e3,
1N4099-1 – 1N4135-1e3
ELECTRICAL CHARACTERISTICS @ 25
°
C unless otherwise stated
INDUSTRY
PART
NUMBER*
(Note 1)
NOMINAL
ZENER
VOLTAGE
VZ @ IZT
(Note 2)
ZENER
TEST
CURRENT
IZT
MAXIMUM
ZENER
IMPEDANCE
ZZT
(Note 3)
MAXIMUM
REVERSE
CURRENT
IR @ VR
MAXIMUM
NOISE
DENSITY
ND @ IZT
MAXIMUM
ZENER
CURRENT
IZM
MAXIMUM
TEMP. COEFF.
OF ZENE R
VOLTAGE
α
VZ
Volts
µA
Ohms
µA
Volts
µV/√Hz
mA
%/oC
1N4614-1
1N4615-1
1N4616-1
1.8
2.0
2.2
250
250
250
1200
1250
1300
3.5
2.5
2.0
1.0
1.0
1.0
1
1
1
120.0
110.0
100.0
-0.075
-0.075
-0.075
1N4617-1
1N4618-1
1N4619-1
1N4620-1
2.4
2.7
3.0
3.3
250
250
250
250
1400
1500
1600
1650
1.0
0.5
0.4
3.5
1.0
1.0
1.0
1.5
1
1
1
1
95.0
90.0
87.0
85.0
-0.075
-0.075
-0.075
-0.075
1N4621-1
1N4622-1
1N4623-1
1N4624-1
3.6
3.9
4.3
4.7
250
250
250
250
1700
1650
1600
1550
3.5
2.5
2.0
5.0
2.0
2.0
2.0
3.0
1
1
1
1
83.0
80.0
77.0
75.0
-0.065
-0.060
-0.050
-0.050,+0.020
1N4625-1
1N4626-1
1N4627-1
1N4099-1
5.1
5.6
6.2
6.8
250
250
250
250
1500
1400
1200
200
5.0
5.0
5.0
1.0
3.0
4.0
5.0
5.2
2
4
5
40
70.0
65.0
61.0
56.0
-0.045,+0.030
-0.020,+0.040
-0.010,+0.050
+0.060
1N4100-1
1N4101-1
1N4102-1
1N4103-1
7.5
8.2
8.7
9.1
250
250
250
250
200
200
200
200
1.0
0.5
0.5
0.5
5.7
6.3
6.7
7.0
40
40
40
40
51.0
46.0
44.0
42.0
+0.065
+0.070
+0.075
+0.080
1N4104-1
1N4105-1
1N4106-1
1N4107-1
10.0
11.0
12.0
13.0
250
250
250
250
200
200
200
200
0.5
0.05
0.05
0.05
7.6
8.5
9.2
9.9
40
40
40
40
38.0
35.0
32.0
29.0
+0.080
+0.080
+0.080
+0.080
1N4108-1
1N4109-1
1N4110-1
1N4111-1
14.0
15.0
16.0
17.0
250
250
250
250
200
100
100
100
0.05
0.05
0.05
0.05
10.7
11.4
12.2
13.0
40
40
40
40
27.0
25.0
24.0
22.0
+0.085
+0.085
+0.085
+0.090
1N4112-1
1N4113-1
1N4114-1
1N4115-1
18.0
19.0
20.0
22.0
250
250
250
250
100
150
150
150
0.05
0.05
0.01
0.01
13.7
14.5
15.2
16.8
40
40
40
40
21.0
20.0
19.0
17.0
+0.090
+0.090
+0.090
+0.090
1N4116-1
1N4117-1
1N4118-1
1N4119-1
24.0
25.0
27.0
28.0
250
250
250
250
150
150
150
200
0.01
0.01
0.01
0.01
18.3
19.0
20.5
21.3
40
40
40
40
16.0
15.0
14.0
14.0
+0.090
+0.090
+0.090
+0.095
1N4120-1
1N4121-1
1N4122-1
1N4123-1
30.0
33.0
36.0
39.0
250
250
250
250
200
200
200
200
0.01
0.01
0.01
0.01
22.8
25.1
27.4
29.7
40
40
40
40
13.0
12.0
11.0
9.8
+0.095
+0.095
+0.095
+0.095
1N4124-1
1N4125-1
1N4126-1
1N4127-1
43.0
47.0
51.0
56.0
250
250
250
250
250
250
300
300
0.01
0.01
0.01
0.01
32.7
35.8
38.8
42.6
40
40
40
40
8.9
8.1
7.5
6.7
+0.095
+0.095
+0.100
+0.100
1N4128-1
1N4129-1
1N4130-1
1N4131-1
60.0
62.0
68.0
75.0
250
250
250
250
400
500
700
700
0.01
0.01
0.01
0.01
45.6
47.1
51.7
57.0
40
40
40
40
6.4
6.1
5.6
5.1
+0.100
+0.100
+0.100
+0.100
1N4132-1
1N4133-1
1N4134-1
1N4135-1
82.0
87.0
91.0
100.0
250
250
250
250
800
1000
1200
1600
0.01
0.01
0.01
0.01
62.4
66.2
69.2
76.0
40
40
40
40
4.6
4.4
4.2
3.8
+0.100
+0.100
+0.100
+0.100
*JEDEC Registered Data.
SEE NOTES ON NEXT PAGE.
T4-LDS-0245-2, Rev. 1 (5/31/13) ©2013 Microsemi Corporation Page 4 of 5
1N4614-1 – 1N4627-1e3,
1N4099-1 – 1N4135-1e3
NOTE 1: The JEDEC type numbers shown in t he prior table have a standard tolerance of +/-5% on the nominal Zener voltage. VZ is measured with
the diode in thermal equili brium (still ai r) at 25 oC.
NOTE 2: Zener im pedanc e is derived by superimposing on IZT a 60 Hz rms ac current at 10% of IZT (25 µA ). See MicroNote 202 for Zener
impedance variat i on with different operating c urrents .
NOTE 3: Bas ed upon 400 mW maximum power dissipation at 25 ºC lead temperature, allowance has been made for the higher volt age associat ed
with operation at higher currents.
GRAPHS
FIGURE 1 – Noise Density Measurement Circuit
Noise density, (ND) is specified in microvolt-rms per square-root-hertz.
Actual measurement is perf ormed using a 1 KHz to 3 KHz frequency
bandpass filter at a constant Zener test current (IZT) at 25 oC ambient
temperature. ND is calculated f rom the formul a.
Zener Voltage VZ
FIGURE 3 – Capacitance vs. Zener Voltage (Typical)
Temperature (oC)
FIGURE 2 – Power Derating Curve
P
d
Rated Power Dissipation (mW)
Typical Capacitance in Picofarads (pF)
T4-LDS-0245-2, Rev. 1 (5/31/13) ©2013 Microsemi Corporation Page 5 of 5
1N4614-1 – 1N4627-1e3,
1N4099-1 – 1N4135-1e3
PACKAGE DIMENSIONS
Ltr
Dimensions
Notes
Inches
Millimeters
Min
Max
Min
Max
BD
0.056
0.090
1.42
2.29
3
BL
0.140
0.200
3.56
5.08
3
LD
0.018
0.022
0.46
0.56
LL
1.000
1.500
25.40
38.10
LL1
-
0.050
-
1.27
4
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for information only.
3. Package contour optional within BD and length BL. Heat slugs, if any, shall be included within this cylinder
but shall not be subject to minimum limit of BD. The BL dimension shall include the entire body including
slugs.
4. Within this zone lead, diameter may vary to allow for lead finishes and irregularities other than heat slugs.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
