DMN2015UFDE
Datasheet number: DS35560 Rev. 9 - 2
1 of 6
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December 2014
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DMN2015UFDE
ADVANCE INFO R MA T I O N
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON) max
ID max
TA = +25°C
20V
11.6m @ VGS = 4.5V
10.5A
15mΩ @ VGS = 2.5V
9.4A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Features
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm2
Low Gate Threshold Voltage
Low On-Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2020-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (approximate)
Ordering Information (Note 4)
Part Number
Marking
Reel size (inches)
Quantity per reel
DMN2015UFDE-7
N4
7
3,000
DMN2015UFDE-13
N4
13
10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
U-DFN2020-6 Type E
Bottom View
N4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
N4
YM
Equivalent Circuit
Source
Gate
Drain
Pin1
Bottom View
Pin Out
DMN2015UFDE
Datasheet number: DS35560 Rev. 9 - 2
2 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DMN2015UFDE
ADVANCE INFO R MA T I O N
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
10.5
8.5
A
t<10s
TA = +25°C
TA = +70°C
ID
12.5
10.0
A
Continuous Drain Current (Note 6) VGS = 2.5V
Steady
State
TA = +25°C
TA = +70°C
ID
9.4
7.5
A
t<10s
TA = +25°C
TA = +70°C
ID
11.2
8.8
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
80
A
Maximum Body Diode Continuous Current
IS
2.5
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
TA = +25°C
PD
0.66
W
TA = +70°C
0.42
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
RJA
189
°C/W
t<10s
132
Total Power Dissipation (Note 6)
TA = +25°C
PD
2.03
W
TA = +70°C
1.31
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
RJA
61
°C/W
t<10s
43
Thermal Resistance, Junction to Case (Note 6)
RJC
9.3
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
20
—
—
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
—
—
1
A
VDS = 16V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±100
nA
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
0.5
—
1.1
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
—
9.3
11.6
m
VGS = 4.5V, ID = 8.5A
11.4
15
VGS = 2.5V, ID = 8.5A
17
30
VGS = 1.8V, ID = 5A
24
50
VGS = 1.5V, ID = 3A
Forward Transfer Admittance
|Yfs|
—
11.3
—
S
VDS = 10V, ID = 8.5A
Diode Forward Voltage
VSD
—
—
1.2
V
VGS = 0V, IS = 8.5A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
—
1779
—
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
—
175
—
pF
Reverse Transfer Capacitance
Crss
—
154
—
pF
Gate Resistance
Rg
—
0.94
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V)
Qg
—
19.7
—
nC
VDS = 10V, ID = 8.5A
Total Gate Charge (VGS = 10V)
Qg
—
45.6
—
nC
Gate-Source Charge
Qgs
—
2.9
—
nC
Gate-Drain Charge
Qgd
—
3.8
—
nC
Turn-On Delay Time
tD(on)
—
7.4
—
ns
VDS = 10V, ID = 8.5A
VGS = 4.5V, RG = 1.8Ω
Turn-On Rise Time
tr
—
16.8
—
ns
Turn-Off Delay Time
tD(off)
—
43.6
—
ns
Turn-Off Fall Time
tf
—
10.9
—
ns
Reverse Recovery Time
Trr
—
8.6
—
ns
IF = 8.5A, di/dt = 210A/μs
Reverse Recovery Charge
Qrr
—
3.7
—
nC
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN2015UFDE
Datasheet number: DS35560 Rev. 9 - 2
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ADVANCE INFO R MA T I O N
0
5
10
15
20
25
30
0 1 2 3
V , DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristic
DS
I , DRAIN CURRENT (A)
D
0
4
8
12
16
20
0 0.5 1.0 1.5 2.0
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
I , DRAIN CURRENT (A)
D
V = 5.0V
DS
T = 150°C
A
T = 125°C
AT = 85°C
A
T = 25°C
A
T = -55°C
A
0.01
0.02
0.03
0.04
0.05
0 4 8 12 16 20
0
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 2.5V
GS
V = 4.5V
GS
V = 1.8V
GS
V = 1.5V
GS
0
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
0 2 4 6 8 10 12
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
I = 8.5A
D
I = 4.5A
D
0
0.015
0 4 8 12 16 20
0.020
0.010
0.005
I , DRAIN CURRENT (A)
D
Fig. 5 Typical On-Resistance vs.
Drain Current and Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0.6
0.8
1.2
1.4
1.6
1.0
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 6 On-Resistance Variation with Temperature
J
V = V
I = 10A
GS
D
4.5
V = V
I = 5A
GS
D
2.5
DMN2015UFDE
Datasheet number: DS35560 Rev. 9 - 2
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ADVANCE INFO R MA T I O N
0.005
0.015
0.020
0.010
0-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 On-Resistance Variation with Temperature
J
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = V
I = 10A
GS
D
10
V = V
I = 5A
GS
D
4.5
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
J
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.0
0
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
I = 1mA
D
I = 250µA
D
0
4
8
12
16
20
0 0.2 0.4 0.6 0.8 1.0
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 9 Diode Forward Voltage vs. Current
I , SOURCE CURRENT (A)
S
T = 25°C
A
10
1,000
0 5 10 15 20
f = 1MHz
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Junction Capacitance
C , JUNCTION CAPACITANCE (pF)
T
Ciss
Coss
Crss
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40 45 50
Q (nC)
g, TOTAL GATE CHARGE
Fig. 11 Gate Charge
V GATE THRESHOLD VOLTAGE (V)
GS
V = 10V
I = A
DS
D
8.5
0.01 0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
I , DRAIN CURRENT (A)
D
R
Limited
DS(on)
T = 150°C
T = 25°C
J(max)
A
V = 12V
Single Pulse
GS
DUT on 1 * MRP Board
DC
P = 10s
WP = 1s
W
P = 100ms
WP = 10ms
W P = 1ms
W
P = 100µs
W
DMN2015UFDE
Datasheet number: DS35560 Rev. 9 - 2
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December 2014
© Diodes Incorporated
DMN2015UFDE
ADVANCE INFO R MA T I O N
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 13 Transient Thermal Resistance
0.001
0.01
0.1
1
r(t), TRANSIENT THERMAL RESISTANCE
R (t) = r(t) * R
R = 61°C/W
Duty Cycle, D = t1/ t2

JA JA
JA
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
Package Outline Dimensions
Suggested Pad Layout
U-DFN2020-6
Type E
Dim
Min
Max
Typ
A
0.57
0.63
0.60
A1
0
0.05
0.03
A3
—
—
0.15
b
0.25
0.35
0.30
b1
0.185
0.285
0.235
D
1.95
2.05
2.00
D2
0.85
1.05
0.95
E
1.95
2.05
2.00
E2
1.40
1.60
1.50
e
—
—
0.65
L
0.25
0.35
0.30
L1
0.82
0.92
0.87
K1
—
—
0.305
K2
—
—
0.225
Z
—
—
0.20
All Dimensions in mm
Dimensions
Value
(in mm)
C
0.650
X
0.400
X1
0.285
X2
1.050
Y
0.500
Y1
0.920
Y2
1.600
Y3
2.300
A1
Z(4X)
b1
L1
K1
K2
D
D2
E
eb(6X)
L(2X)
E2
AA3
X1
Y3
X (6x) C
X2 Y1
Y2
Y (2x)
DMN2015UFDE
Datasheet number: DS35560 Rev. 9 - 2
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ADVANCE INFO R MA T I O N
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