Pacific Silicon Sensor Series 11 Data Sheet Part Description AD800-11-TO52-S1 Order # 06-112 ACTIVE AREA: 0.50 mm 2 (800 m DIA) O 2.54 PIN CIRCLE PIN 1 ANODE O0.46 3 PL O5.40 O3.90 64 VIEWING ANGLE PIN 4 CASE 2.70 1 12.7 3 PL FRONTSIDE VIEW BACKSIDE VIEW DESCRIPTION APPLICATIONS 0.50 mm High Speed, High Gain, Blue Enhanced Avalanche Photodiode with P on N construction. Hermetically packaged in a case isolated TO-52-S1 with a UV transmitting clear glass window cap. 2 ABSOLUTE MAXIMUM RATING SYMBOL PARAMETER MIN TSOLDERING IPH (DC) Storage Temp Operating Temp Soldering Temp 10 seconds Electrical Power Dissipation @ 22C Optical Peak Value, once for 1 second Continuous Optical Operation 1 mA for signal 50 s "on" / 1 ms "off" UNITS +125 +85 C C 50 +260 C 40 - 100 mW - 200 mW -55 -40 Analytical equipment Scintillation Medical equipment High speed photometry SPECTRAL RESPONSE M=100 MAX - 250 A 92% of VBR 45 RESPONSIVITY (A/W) TSTG TOP C S PL I A NT OM FEATURES 800 m active area Blue enhanced High QE at blue range Fast rise time PIN 3 CATHODE H 5.2 Ro O 4.70 35 30 25 85% of VBR 20 15 75% of V BR 10 5 0 200 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS @ 23 C SYMBOL CHARACTERISTIC TEST CONDITIONS ID C VBR Dark Current Capacitance Breakdown Voltage Temperature Coefficient of VBR Responsivity 3dB tr NEP Bandwidth Rise Time Optimum Gain Noise Current Max Gain Noise Equivalent Power MIN TYP MAX UNITS M = 100; = 410 nm 200 --- 1.0 2.5 200 0.88 25 35 40 175 1 --0.25 500 -14 1.0 X 10 5.0 ----------------80 ------- nA pF V V/K M = 100 ----100 ------------50 --- M = 100 M = 100 ID = 2 A M = 100; = 400 nm M = 100; = 500 nm M = 100; = 600 nm -3dB = 410 nm; RL = 50 A/W MHz ns pA/Hz W/Hz 1/2 Disclaimer: Due to our policy of continued development, specifications are subject to change without notice. 6/17/2011 1/2 Page 1 of 2 TYPICAL GAIN vs BIAS VOLTAGE TYPICAL DARK CURRENT vs BIAS VOLTAGE 1000 DARK CURRENT (Id) 1000 GAIN 100 10 1 0.1 0.01 0 20 40 60 80 100 120 140 100 10 1 0.1 0.01 0 20 BIAS VOLTAGE (Vr) DEVICE SCHEMATIC 40 60 80 100 120 140 BIAS VOLTAGE (Vr) SUGGESTED CIRCUIT SCHEMATIC BIAS SUPPLY VOLTAGE CURRENT LIMITING RESISTOR PIN 1 PIN 4 MIN. 0.1 F CAPACITOR CLOSEST TO APD APD PIN 3 DIODE, PROTECTIVE CIRCUIT READ-OUT CIRCUIT OR 50 Ohm LOAD RESISTANCE APPLICATION NOTES Current should be limited by a protecting resistor or current limiting IC inside the power supply. Use of low noise read-out IC. For high gain applications (M>50) bias voltage should be temperature compensated. For low light level applications, blocking of ambient light should be used. HANDLING PRECAUTIONS: Soldering temperature - 260C for 10 seconds max. The device must be protected against solder flux vapor. Minimum pin length - 2 mm ESD protection - Standard precautionary measures are sufficient. Storage - Store devices in conductive foam. Avoid skin contact with window. Clean window with Ethyl alcohol if necessary. Do not scratch or abrade window. USA: International sales: Pacific Silicon Sensor, Inc. 5700 Corsa Avenue, #105 Westlake Village, CA 91362 USA Phone (818) 706-3400 Fax (818) 889-7053 Email: sales@pacific-sensor.com www.pacific-sensor.com Silicon Sensor International AG Peter-Behrens-Str. 15 D-12459 Berlin, Germany Phone +49 (0)30-63 99 23 10 Fax +49 (0)30-63 99 23 33 Email: sales@silicon-sensor.de www.silicon-sensor.de Proud Members of the Silicon Sensor International AG Group of companies 6/17/2011 Page 2 of 2