© 2011 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ 1000 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C 23 A
IDM TC= 25°C, Pulse Width Limited by TJM 96 A
IATC= 25°C 32A
EAS TC= 25°C3J
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns
PDTC= 25°C 570 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
VISOL 50/60 Hz, 1 Minute 2500 V∼
FCMounting Force 20..120/4.5..27 N/lb.
Weight 5 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 1000 V
VGS(th) VDS = VGS, ID = 8mA 3.5 6.5 V
IGSS VGS = ±30V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS = 0V 50 μA
TJ = 125°C 2 mA
RDS(on) VGS = 10V, ID = 16A, Note 1 350 mΩ
HiperFETTM
Power MOSFET
Q3-Class
IXFR32N100Q3 VDSS = 1000V
ID25 = 23A
RDS(on) ≤≤
≤≤
≤ 350mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 300ns
DS100366(07/11)
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Features
zSilicon Chip on Direct-Copper Bond
(DCB) Substrate
zIsolated Mounting Surface
zLow Intrinsic Gate Resistance
z2500V~ Electrical Isolation
zFast Intrinsic Rectifier
zAvalanche Rated
zLow Package Inductance
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zDC-DC Converters
zBattery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC Choppers
zTemperature and Lighting Controls
(Electrically Isolated Tab)
G = Gate D = Drain
S = Source
ISOPLUS247
E153432
G
S
DIsolated Tab
Advance Technical Information
IXFR32N100Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 16A, Note 1 20 32 S
Ciss 9940 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 766 pF
Crss 64 pF
RGi Gate Input Resistance 0.15 Ω
td(on) 45 ns
tr 15 ns
td(off) 54 ns
tf 12 ns
Qg(on) 195 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 16A 60 nC
Qgd 78 nC
RthJC 0.22 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 32 A
ISM Repetitive, Pulse Width Limited by TJM 128 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 300 ns
QRM 1.2 μC
IRM 12.3 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 16A
RG = 1Ω (External)
IF = 16A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
1 = Gate
2,4 = Drain
3 = Source
ISOPLUS247 (IXFR) Outline
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
© 2011 IXYS CORPORATION, All Rights Reserved
IXFR32N100Q3
Fi g . 1. Ou tp ut C har acter isti cs @ T
J
= 25ºC
0
4
8
12
16
20
24
28
32
012345678910
V
DS
- Volts
I
D
- Ampere s
V
GS
= 10V
6
V
7
V
8
V
Fi g . 2. Exte n d ed Ou tpu t Ch ar acter isti cs @ T
J
= 25ºC
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30
V
DS
- V o lts
I
D
- Amperes
V
GS
= 10V
7
V
6
V
8
V
Fi g . 3. Ou tpu t C har acter isti cs @ T
J
= 125º C
0
4
8
12
16
20
24
28
32
0 5 10 15 20 25
V
DS
- Volts
I
D
- Ampere s
6
V
7V
5V
V
GS
= 10V
Fig. 4. R
DS(on)
No r mali zed to I
D
= 16A Valu e vs.
Junction T emperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Deg re es Centigrad e
R
DS(on)
- Normali zed
V
GS
= 10V
I
D
= 32A
I
D
= 16A
Fig. 5. R
DS(on)
Normalized to I
D
= 16A Valu e vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
0 10203040506070
I
D
- Amp e res
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 6. Maximu m Dr ai n Curr en t vs.
Ca se Temper a tu r e
0
4
8
12
16
20
24
-50 -25 0 25 50 75 100 125 150
T
C
- Deg rees Ce ntigrade
I
D
- Amper es
IXFR32N100Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Adm ittance
0
5
10
15
20
25
30
35
40
45
50
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30 35 40 45 50
I
D
- A mp e re s
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
10
20
30
40
50
60
70
80
90
100
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig . 10. Gate Ch ar g e
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 50 0V
I
D
= 16A
I
G
= 10mA
Fig. 11. Capaci tance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
10 100 1,000 10,000
V
DS
- Vo lt s
I
D
- Am pe re s
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
1ms
R
DS(on)
Limit
© 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_32N100Q3(Q8) 7-20-11-A
IXFR32N100Q3
Fi g . 13. Maximu m Tran sien t Thermal Imp ed an ce
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
