SSN1N45B SSN1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic ballasts based on half bridge configuration. * * * * * * 0.5A, 450V, RDS(on) = 4.25 @VGS = 10 V Low gate charge ( typical 6.5 nC) Low Crss ( typical 6.5 pF) 100% avalanche tested Improved dv/dt capability Gate-Source Voltage 50V guaranteed D ! G! TO-92 Absolute Maximum Ratings Symbol VDSS ID ! S SSN Series GDS TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) IDM Drain Current - Pulsed (Note 1) SSN1N45B 450 Units V 0.5 A 0.32 A 4.0 A 50 V 108 mJ VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 0.5 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) (Note 1) 0.25 5.5 0.9 mJ V/ns W 2.5 0.02 -55 to +150 W W/C C 300 C dv/dt PD (Note 3) Power Dissipation (TL = 25C) TJ, Tstg TL - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJL Parameter Thermal Resistance, Junction-to-Lead (Note 6a) Typ -- Max 50 Units C/W RJA Thermal Resistance, Junction-to-Ambient (Note 6b) -- 140 C/W (c)2002 Fairchild Semiconductor Corporation Rev. A, November 2002 Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 450 -- -- V -- 0.5 -- V/C VDS = 450 V, VGS = 0 V -- -- 10 A VDS = 360 V, TC = 125C -- -- 100 A Gate-Body Leakage Current, Forward VGS = 50 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -50 V, VDS = 0 V -- -- -100 nA VDS = VGS, ID = 250 A 2.3 3.0 3.7 V VDS = VGS, ID = 250 mA 3.5 4.2 4.9 V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.25 A -- 3.4 4.25 gFS Forward Transconductance VDS = 50 V, ID = 0.25 A -- 0.7 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 185 240 pF -- 29 40 pF -- 6.5 8.5 pF -- 7.5 25 ns -- 21 50 ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 225 V, ID = 0.5 A, RG = 25 (Note 4,5) VDS = 360 V, ID = 0.5 A, VGS = 10 V (Note 4,5) -- 23 55 ns -- 36 80 ns -- 6.5 8.5 nC -- 0.9 -- nC -- 3.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 0.5 A ISM -- -- 4.0 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 0.5 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 102 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 0.5 A, dIF / dt = 100 A/s -- 0.26 -- C (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 75mH, IAS = 1.6A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 0.5A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature 6. a) Reference point of the RJL is the drain lead b) When mounted on 3"x4.5" FR-4 PCB without any pad copper in a still air environment (RJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RCA is determined by the user's board design) (c)2002 Fairchild Semiconductor Corporation Rev. A, November 2002 SSN1N45B Electrical Characteristics SSN1N45B Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 0 ID, Drain Current [A] 10 ID , Drain Current [A] Top : -1 10 0 150 10 25 -55 Notes : 1. 250 s Pulse Test 2. TC = 25 Notes : 1. VDS = 50V 2. 250 s Pulse Test -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 12 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 10 VGS = 10V 8 VGS = 20V 6 4 2 0 10 150 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 -1 0 0 1 2 3 4 5 10 0.2 0.4 0.6 1.0 1.2 1.4 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 400 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 VDS = 90V 10 VDS = 225V Ciss 200 Coss 100 Crss Note ; 1. VGS = 0 V 2. f = 1 MHz VGS, Gate-Source Voltage [V] 300 Capacitance [pF] 0.8 ID, Drain Current [A] VDS = 360V 8 6 4 2 Note : ID = 0.5 A 0 -1 10 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics (c)2002 Fairchild Semiconductor Corporation 0 0 1 2 3 4 5 6 7 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A, November 2002 SSN1N45B Typical Characteristics (Continued) 3.0 1.2 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 0.25 A 0.5 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 0.6 Operation in This Area is Limited by R DS(on) 1 0.5 100 s 1 ms 10 ms 100 ms 1s 0 10 0.4 ID, Drain Current [A] ID, Drain Current [A] 10 0.3 -1 10 DC 0.2 Notes : o -2 1. TC = 25 C 10 o 2. TJ = 150 C 3. Single Pulse 0.1 -3 10 0 1 10 2 10 0.0 25 3 10 10 50 75 2 10 1 125 150 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 0 .2 0 .1 PDM 0 .0 5 10 t1 0 .0 2 0 t2 0 .0 1 J L Z (t), T h e rm a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 100 TC, Case Temperature [] VDS, Drain-Source Voltage [V] 10 N o te s : 1 . Z J L (t) = 5 0 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T L = P D M * Z J L (t) s i n g l e p u ls e -1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t 1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve (c)2002 Fairchild Semiconductor Corporation Rev. A, November 2002 SSN1N45B Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp (c)2002 Fairchild Semiconductor Corporation ID (t) VDS (t) VDD tp Time Rev. A, November 2002 SSN1N45B Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2002 Fairchild Semiconductor Corporation Rev. A, November 2002 SSN1N45B Package Dimensions TO-92 +0.25 4.58 0.20 4.58 -0.15 0.10 14.47 0.40 0.46 1.27TYP [1.27 0.20] 1.27TYP [1.27 0.20] 0.20 (0.25) +0.10 0.38 -0.05 1.02 0.10 3.86MAX 3.60 +0.10 0.38 -0.05 (R2.29) Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2002 Fairchild Semiconductor Corporation Rev. I1