Rev. A, November 2002
SSN1N45B
©2002 Fairchild Semiconductor Corporation
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 75mH, IAS = 1.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 0.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
5. Essentially independent of operating temperature
6. a) Reference point of the RθJL is the drain lead
b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment
(RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RθCA is determined by the user’s board design)
Symbol Parame ter Test Condition s Min Typ Max Units
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, ID = 250 µA450 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 450 V, VGS = 0 V -- -- 10 µA
VDS = 360 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 50 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -50 V, VDS = 0 V -- -- -100 nA
On Characteri st ics
VGS(th) G ate Threshold Voltage VDS = VGS, ID = 250 µA2.3 3.0 3.7 V
VDS = VGS, ID = 250 mA 3.5 4.2 4.9 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 0.25 A -- 3.4 4.25 Ω
gFS Forward Transconductance VDS = 50 V, ID = 0.25 A -- 0.7 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 185 240 pF
Coss Output Capacitance -- 29 40 pF
Crss Reverse Transfer Capacitance -- 6.5 8.5 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 225 V, ID = 0.5 A,
RG = 25 Ω
(Note 4,5)
-- 7.5 25 ns
trTurn-On Rise Time -- 21 50 ns
td(off) Turn-Off De l a y Time -- 23 55 ns
tfTurn -Off Fall Time -- 3 6 80 ns
QgTotal Gate Charge VDS = 360 V, ID = 0.5 A,
VGS = 10 V
(Note 4,5)
-- 6.5 8.5 nC
Qgs Gate-Source Charge -- 0.9 -- nC
Qgd Gate-Drain Charge -- 3.2 -- nC
Drain-Source Di ode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 0.5 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 4.0 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 0.5 A,
dIF / dt = 100 A/µs (Note 4)
-- 102 -- ns
Qrr Reverse Recovery Charge -- 0.26 - - µC