BD241C* (NPN), BD242B (PNP), BD242C* (PNP) *Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMPERES 80, 100 VOLTS 40 WATTS * Collector-Emitter Saturation Voltage - * * * * * VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) BD241C, BD242C High Current Gain - Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO-220 AB Package Epoxy Meets UL94, V-0 @ 0.125 in. ESD Ratings: Human Body Model, 3B 8000 V Machine Model, C 400 V MARKING DIAGRAM IIIIIIIIIIIIIIIIIIII IIIIIIII IIII IIII IIII IIII IIIIIIIIIIIIIIIIIIII IIIIIIII IIII IIII IIII IIII I III IIIIIIII IIII IIII IIII IIII I III IIIIIIII IIII IIII IIII IIII IIIIIIII IIII IIIIIII IIII IIII IIII IIIIIIII IIII IIIIIII IIII IIIIIIII IIII IIIIIII IIII IIIIIIII IIII IIIIIII IIII IIIIIIII IIII IIIIIII IIII IIIIIIII IIII IIIIIII IIII IIIIIIII IIII IIIIIII IIII IIIIIIII IIII IIIIIII IIII IIIIIIII IIII IIIIIII IIII IIIIIIIIIIIIIIIIIIII IIIIIIII IIII IIIIIII IIII IIIIIIIIIIII IIII III IIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIII IIIIIIIIIIII IIII III IIII IIIIIIIIIIII IIII III IIII MAXIMUM RATINGS Rating Symbol BD242B BD241C BD242C Collector-Emitter Voltage VCEO 80 100 Collector-Emitter Voltage VCES Emitter-Base Voltage VEB 90 115 Unit Vdc Vdc 5.0 Vdc Collector Current Continuous Peak IC Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 40 Watts 0.32 W/C - 65 to + 150 C Operating and Storage Junction Temperature Range TO-220AB CASE 221A STYLE 1 1 2 STYLE 1: PIN 1. 2. 3. 4. 3 BASE COLLECTOR EMITTER COLLECTOR Adc 3.0 5.0 TJ, Tstg AYWW BDxxx THERMAL CHARACTERISTICS xxx A Y WW = Specific Device Code: 241C, 242B, 242C = Assembly Location = Year = Work Week ORDERING INFORMATION Device Package Shipping BD241C TO-220AB 50 Units/Rail Symbol Max Unit BD242B TO-220AB 50 Units/Rail Thermal Resistance, Junction to Ambient RJA 62.5 C/W BD242C TO-220AB 50 Units/Rail Thermal Resistance, Junction to Case RJC 3.125 C/W Characteristic Semiconductor Components Industries, LLC, 2003 August, 2003 - Rev. 5 1 Publication Order Number: BD241C/D BD241C* (NPN), BD242B (PNP), BD242C* (PNP) PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) Figure 1. Power Derating http://onsemi.com 2 140 160 BD241C* (NPN), BD242B (PNP), BD242C* (PNP) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) VCEO BD242B BD241C, BD242C Collector Cutoff Current (VCE = 50 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) BD242B BD241C, BD242C Collector Cutoff Current (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) BD242B BD241C, BD242C Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Vdc 80 100 ICEO 0.3 mAdc ICES 200 Adc IEBO 1.0 mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) hFE 25 10 Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) VCE(sat) 1.2 Vdc Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) 1.8 Vdc DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 MHz 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. fT = |hfe| * ftest. 2.0 TURN-ON PULSE APPROX + 11 V VCC Vin RL 0.7 0.5 SCOPE RK VEB(off) t1 APPROX + 11 V t3 t, TIME (s) CjdCeb Vin 0 - 4.0 V t1 7.0 ns 100 t2 500 s t3 15 ns 0.3 tr @ VCC = 30 V tr @ VCC = 10 V 0.1 0.07 0.05 Vin t2 TURN-OFF PULSE IC/IB = 10 TJ = 25C 1.0 0.03 0.02 0.03 DUTY CYCLE 2.0% APPROX - 9.0 V Figure 2. Switching Time Equivalent Circuit td @ VBE(off) = 2.0 V 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn-On Time http://onsemi.com 3 3.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BD241C* (NPN), BD242B (PNP), BD242C* (PNP) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 P(pk) ZJC (t) = r(t) RJC RJC = 3.125C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. Thermal Response 10 5.0 1.0 ms 5.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 s 2.0 1.0 SECOND BREAKDOWN LIMITED @ TJ 150C THERMAL LIMITATION @ TC = 25C BONDING WIRE LIMITED 0.5 0.2 CURVES APPLY BELOW RATED VCEO BD241C, BD242C 0.1 5.0 10 20 50 IC, COLLECTOR CURRENT (AMP) 100 Figure 5. Active Region Safe Operating Area 1.0 0.7 0.5 0.3 0.2 ts tf @ VCC = 30 V 300 IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C TJ = + 25C 200 CAPACITANCE (pF) t, TIME (s) 3.0 2.0 tf @ VCC = 10 V 0.1 Ceb 70 50 0.07 0.05 0.03 0.03 100 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 30 0.1 2.0 3.0 Figure 6. Turn-Off Time Ccb 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4 20 30 40 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) BD241C* (NPN), BD242B (PNP), BD242C* (PNP) 500 hFE, DC CURRENT GAIN 300 100 70 VCE = 2.0 V TJ = 150C 25C -55 C 50 30 10 7.0 5.0 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 TJ = 25C 1.6 1.2 IC = 0.3 A 0.4 0 3.0 1.0 V, TEMPERATURE COEFFICIENTS (mV/C) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (A) +1.5 +1.0 *VC FOR VCE(sat) +0.5 0 -0.5 -1.0 -1.5 VB FOR VBE -2.0 0.05 0.1 0.2 0.3 0.5 1.0 Figure 10. "On" Voltages Figure 11. Temperature Coefficients 101 TJ = 150C 100 100C REVERSE FORWARD 25C ICES -0.1 0 +0.1 +0.2 +0.3 1000 *APPLIES FOR IC/IB 5.0 TJ = - 65C TO + 150C +2.0 IC, COLLECTOR CURRENT (AMP) VCE = 30 V 10- 3 -0.4 -0.3 -0.2 500 IC, COLLECTOR CURRENT (AMPS) 102 10- 2 10 20 50 100 200 IB, BASE CURRENT (mA) -2.5 0.003 0.005 0.01 0.02 2.0 3.0 103 10-1 5.0 +2.5 RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) V, VOLTAGE (VOLTS) TJ = 25C 0 0.003 0.005 0.01 0.020.03 0.05 2.0 Figure 9. Collector Saturation Region 1.4 0.2 3.0 A 0.8 Figure 8. DC Current Gain 1.2 1.0 A +0.4 +0.5 +0.6 2.0 3.0 107 VCE = 30 V IC = 10 x ICES 106 105 IC ICES IC = 2 x ICES 104 103 102 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 20 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 12. Collector Cut-Off Region Figure 13. Effects of Base-Emitter Resistance http://onsemi.com 5 BD241C* (NPN), BD242B (PNP), BD242C* (PNP) PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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