
AUIRF7484Q
2 2015-11-16
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400µs; duty cycle 2%.
Surface mounted on 1" in square Cu board.
Starting TJ = 25°C, L = 2.3mH, RG = 25, IAS = 14A. (See Fig. 12)
Limited by TJmax , see Fig.16b, 16c, 19, 20 for typical repetitive avalanche performance.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.040 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 10 mVGS = 7.0V, ID = 14A
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 40 ––– ––– S VDS = 10V, ID = 14A
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS =40V, VGS = 0V
––– ––– 250 VDS = 32V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 8.0V
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -8.0V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 69 100
nC
ID = 14A
Qgs Gate-to-Source Charge ––– 9.0 ––– VDS = 32V
Qgd Gate-to-Drain Charge ––– 16 ––– VGS = 7.0V
td(on) Turn-On Delay Time ––– 9.3 –––
ns
VDD = 20V
tr Rise Time ––– 5.0 ––– ID = 1.0A
td(off) Turn-Off Delay Time ––– 180 ––– RG = 6.2
tf Fall Time ––– 58 ––– VGS = 7.0V
Ciss Input Capacitance ––– 3520 –––
pF
VGS = 0V
Coss Output Capacitance ––– 660 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 76 ––– ƒ = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 2.3
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 110 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 2.3A,VGS = 0V
trr Reverse Recovery Time ––– 59 89 ns TJ = 25°C ,IF = 2.3A,
Qrr Reverse Recovery Charge ––– 110 170 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)