MITSUBISHI SEMICONDUCTORS <HVIC> M63991FP HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M63991FP is high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION (TOP VIEW) FEATURES 16 NC 2 15 GND VCC 3 14 LIN 13 NC 12 HIN 11 VDD VB 7 10 NC HO 8 9 NC LO 1 GND NC 4 NC 5 APPLICATIONS PDP. HID lamp. MOSFET and IGBT inverter module driver for refrigerator, air-conditioner, washing machine, AC-servomotor and general purpose. VS 6 M63991FP FLOATING SUPPLY VOLTAGE ................................... 600V OUTPUT CURRENT .............................................500mA HALF BRIDGE DRIVER SOP-16 NC:NO CONNECTION PACKAGE TYPE 16P2N BLOCK DIAGRAM VB HV LEVEL SHIFT VDD UV DETECT FILTER R Q HO R INTER LOCK HIN VDD/ VCC LEVEL SHIFT S PULSE GEN VS VCC UV DETECT FILTER R DELAY S Q LO LIN GND GND Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63991FP HIGH VOLTAGE HALF BRIDGE DRIVER ABSOLUTE MAXIMUM RATINGS Symbol VB VS VHO VCC VLO VDD VIN dVS/dt Pt Kq Rth(j-c) Tj Topr Tstg Parameter High Side Floating Supply Voltage Conditions High Side Floating Supply Offset Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Supply Voltage Logic Input Voltage Allowable Offset Supply Voltage Transient Package Power Dissipation HIN, LIN Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Ta > 25C, On Board Ratings -0.5~624 VB-24 ~ VB+0.5 Unit VS-0.5 ~ VB+0.5 -0.5 ~ 24 V V -0.5 ~ VCC+0.5 -0.5 ~ 7 V V V -0.5 ~ VDD+0.5 V V 50 0.89 V/ns W 8.9 45 mW/C C/W -20 ~ 125 -20 ~ 75 C C -40 ~ 125 C Ta = 25C, On Board Operation Temperature Storage Temperature RECOMMENDED OPERATING CONDITIONS Symbol Parameter Test Conditions VB High Side Floating Supply Voltage VS VCC High Side Floating Supply Offset Voltage Low Side Fixed Supply Voltage VDD VIN Logic Supply Voltage Logic Input Voltage HIN, LIN Min. VS+13.5 Limits Typ. -- Max. VS+20 -5 13.5 -- -- 500 20 V V 4.5 0 -- -- 5.5 VDD V V Unit V FUNCTION TABLE HIN LIN VBS UV VCC UV HO LO L L H H L L LO = OFF, HO = OFF L H H H L H H H H H H H L H L H L L LO = ON, HO = OFF X L H L L H H L L L H LO = OFF, HO = OFF, VBS UV tripped LO = ON, HO = OFF, VBS UV tripped L H X H H L L L (Note) H(Note) L L LO = OFF, HO = OFF, VCC UV tripped LO = OFF, HO = ON, VCC UV tripped Behavioral state LO = OFF, HO = ON LO = OFF, HO = OFF, LIN = HIN = H simultaneously Note : "L" state of VBS UV and VCC UV mean that UV trip voltage. Even VCC UV is tripped, HO state is not changed. When VCC is lower than UV trip voltage, HIN state can not be propagated to HO. Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63991FP HIGH VOLTAGE HALF BRIDGE DRIVER ELECTRICAL CHARACTERISTICS (Ta=25C, VCC=VBS=15V, VDD=5V unless otherwise specified) Symbol Parameter Test conditions Min. Limits Typ. Max. -- 0.2 -- 0.5 1.0 1.0 A mA Unit IFS IBS Floating Supply Leakage Current VBS standby Current ICC VCC standby Current 0.2 0.5 1.0 mA IDD VDD standby Current -- -- 100 A VOH VOL High Level Output Voltage Low Level Output Voltage IO=0A, LO, HO IO=0A, LO, HO 13.8 -- 14.4 -- -- 0.1 V V VIH High Level Input Threshold Voltage HIN, LIN 2.1 3.0 4.0 V VIL Low Level Input Threshold Voltage HIN, LIN 0.6 1.5 1.9 V IIH IIL High Level Input Bias Current Low Level Input Bias Current VIN=5V VIN=0V -- -- 25 -- 75 1.0 A A VBSUVT VBS Supply UV Trip Voltage 9.5 10.5 11.5 V VBSUVR VBS Supply UV Reset Voltage 10.0 11.0 12.0 V tVBSUV VCCUVT VBS Supply UV Filter Time VCC Supply UV Trip Voltage -- 9.5 7.5 10.5 -- 11.5 s V VCCUVR VCC Supply UV Reset Voltage 10.0 11.0 12.0 V tVCCUV VCC Supply UV Filter Time -- 7.5 -- s IOH IOL Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current VO=0V, VIN=5V, PW<10s VO=15V, VIN=0V, PW<10s -- -- -0.5 0.5 -- -- A A ROH Output High Level On resistance IO=-200mA, ROH=(VOH-VO)/IO -- 40 -- ROL Output Low Level On resistance IO=200mA, ROL=VO/IO -- 20 -- tdLH(HO) tdHL(HO) High Side Turn-On Propagation Delay High Side Turn-Off Propagation Delay CL=1000pF between HO - VS CL=1000pF between HO - VS 250 230 300 280 350 330 ns ns tr(HO) High Side Turn-On Rise Time CL=1000pF between HO - VS -- 80 -- ns tf(HO) High Side Turn-Off Fall Time CL=1000pF between HO - VS -- 60 -- ns tdLH(LO) tdHL(LO) Low Side Turn-On Propagation Delay Low Side Turn-Off Propagation Delay CL=1000pF between LO - GND CL=1000pF between LO - GND 250 230 300 280 350 330 ns ns tr(LO) Low Side Turn-On Rise Time CL=1000pF between LO - GND -- 80 -- ns tf(LO) Low Side Turn-Off Fall Time CL=1000pF between LO - GND -- 60 -- ns tdMon tdMoff Delay Matching, High Side and Low Side Turn-On Delay Matching, High Side and Low Side Turn-Off |tdLH(HO)-tdLH(LO)| |tdHL(HO)-tdHL(LO)| -- -- -- -- 30 30 ns ns VB=VS=600V Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63991FP HIGH VOLTAGE HALF BRIDGE DRIVER LEAD DEFINITIONS Lead symbol LO GND VCC Description Low side gate drive output Ground Low side supply High side floating supply (minus side) VS High side floating supply (plus side) High side gate drive output VB HO VDD HIN Logic supply Logic input for high side gate driver output (HO) LIN Logic input for low side gate driver output (LO) TIMING DIAGRAM 1. Input/Output Timing Diagram HIN LIN HO LO 2. VCC(VBS) Supply Undervoltage Lockout Timing Diagram VCC (VBS) VCCUVR (VBSUVR) VCCUVT (VBSUVT) tVCCU (tVBSUV) LO (HO) LIN (HIN) Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63991FP HIGH VOLTAGE HALF BRIDGE DRIVER PERFORMANCE CURVES IFS vs. Temperature IBS vs. Temperature 1.0 10 9 8 0.8 7 IBS (mA) IFS (A) 6 5 4 3 2 0.6 0.4 1 0 -1 -20 0 25 50 75 100 0.2 -20 125 0 25 50 75 100 125 100 125 100 125 Ta (C) Ta (C) VIH, VIL vs. Temperature ICC vs. Temperature 1.0 4.0 3.5 3.0 0.8 2.5 ICC (mA) VIH, VIL (V) VIH 2.0 VIL 1.5 1.0 0.6 0.4 0.5 0.0 -20 0 25 50 75 100 0.2 -20 125 0 25 75 Ta (C) Ta (C) UVT, UVR vs. Temperature IIH vs. Temperature 30 12.0 25 11.5 20 UVR 11.0 10.5 IIH (A) UVT, UVR (V) 50 UVT 15 10 10.0 9.5 -20 5 0 25 50 Ta (C) 75 100 125 0 -20 0 25 50 75 Ta (C) Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63991FP HIGH VOLTAGE HALF BRIDGE DRIVER IOH, IOL vs. Voltage 1000 900 900 IOH, IOL (mA) IOH, IOL (mA) IOH, IOL vs. Temperature 1000 800 700 600 500 -20 800 700 600 0 25 50 75 100 500 13 125 14 15 15.0 15.0 10.0 5.0 19 20 19 20 19 20 10.0 5.0 0 25 50 75 100 0.0 13 125 14 15 Ta (C) 16 17 18 VB, VCC (V) ROH vs. Temperature ROH vs. Voltage 35.0 35.0 30.0 30.0 ROH () ROH () 18 ROL vs. Voltage 20.0 ROL () ROL () ROL vs. Temperature 20.0 25.0 25.0 20.0 20.0 15.0 -20 17 VB, VCC (V) Ta (C) 0.0 -20 16 0 25 50 Ta (C) 75 100 125 15.0 13 14 15 16 17 18 VB, VCC (V) Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63991FP HIGH VOLTAGE HALF BRIDGE DRIVER tdLH, tdHL vs. Voltage 450 400 400 350 tdLH, tdHL (ns) tdLH, tdHL (ns) tdLH, tdHL vs. Temperature 450 tdLH (HO) tdLH (LO) 300 tdHL (HO) tdHL (LO) 250 350 tdLH (HO) tdLH (LO) 300 tdHL (HO) tdHL (LO) 250 200 -20 0 25 50 75 100 200 13 125 14 15 16 17 19 20 VB, VCC (V) Ta (C) Power Loss vs. Frequency Power Loss Frequency (HV=0V) 1000 10000 VB=VCC=15V, VDD=5V, CL=1000pF VB=VCC=15V VDD=5V CL=10000pF CL=1000pF 1000 Power Loss (mW) VS=400V Power Loss (mW) 18 VS=300V 100 VS=200V VS=100V 100 CL=0pF 10 10 1 10 100 1000 Frequency (kHz) 1 10 100 1000 Frequency (kHz) Power Dissipation Pt(W) Thermal Derating Factor Characteristics 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 Ambient Temperature Ta (C) Sep. 2000 MITSUBISHI SEMICONDUCTORS <HVIC> M63991FP HIGH VOLTAGE HALF BRIDGE DRIVER PACKAGE OUTLINE 16P2N-A Plastic 16pin 300mil SOP EIAJ Package Code SOP16-P-300-1.27 JEDEC Code - Weight(g) 0.2 Lead Material Cu Alloy e b2 9 E Recommended Mount Pad 8 1 Symbol F A D A2 A1 b y L e L1 HE e1 I2 16 A A1 A2 b c D E e HE L L1 y c Detail F b2 e1 I2 Dimension in Millimeters Min Nom Max - - 2.1 0 0.1 0.2 - - 1.8 0.5 0.35 0.4 0.25 0.2 0.18 10.2 10.1 10.0 5.4 5.3 5.2 1.27 - - 7.8 8.1 7.5 0.6 0.8 0.4 - 1.25 - 0.1 - - 0 - 8 - 0.76 - - 7.62 - - 1.27 - Sep. 2000