Sep. 2000
UV
DETECT
FILTER
DELAY S
RQ
UV
DETECT
FILTER
HV
LEVEL
SHIFT
PULSE
GEN
VDD/
VCC
LEVEL
SHIFT
INTER
LOCK
RQ
R
S
VDD
HIN
LIN
GND GND
LO
VCC
VS
HO
VB
M63991FP
LO 1
8
2
7
3
6
4
5
16
9
15
10
14
11
13
12
GND
VCC
NC
NC
VS
VB
HO
NC
GND
LIN
NC
HIN
VDD
NC
NC
APPLICATIONS
PDP. HID lamp.
MOSFET and IGBT inverter module driver for refr igerator,
air-conditioner, washing machine, AC-ser vomotor and gen-
eral purpose.
FEATURES
¡FLOATING SUPPLY VOLTAGE...................................600V
¡OUTPUT CURRENT .............................................±500mA
¡HALF BRIDGE DRIVER
¡SOP-16
DESCRIPTION
M63991FP is high voltage Power MOSFET and IGBT mod-
ule driver for half bridge applications.
BLOCK DIAGRAM
PIN CONFIGURATION (TOP VIEW)
PACKAGE TYPE 16P2N
NC:NO CONNECTION
MITSUBISHI SEMICONDUCTORS <HVIC>
M63991FP
HIGH VOLTAGE HALF BRIDGE DRIVER
Sep. 2000
V
V
V
V
V
VS+13.5
–5
13.5
4.5
0
—
—
—
—
—
VS+20
500
20
5.5
VDD
ABSOLUTE MAXIMUM RATINGS
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
Low Side Fixed Supply Voltage
Logic Supply Voltage
Logic Input Voltage
Symbol UnitParameter Test Conditions Limits
Min. Typ. Max.
HIN, LIN
VB
VS
VCC
VDD
VIN
–0.5~624
VB–24 ~ VB+0.5
VS–0.5 ~ VB+0.5
–0.5 ~ 24
–0.5 ~ VCC+0.5
–0.5 ~ 7
–0.5 ~ VDD+0.5
±50
0.89
8.9
45
–20 ~ 125
–20 ~ 75
–40 ~ 125
HIN, LIN
Ta = 25°C, On Board
Ta > 25°C, On Board
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
High Side Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Supply Voltage
Logic Input Voltage
Allowable Offset Supply Voltage Transient
Package Power Dissipation
Linear Derating Factor
Junction-Case Thermal Resistance
Junction Temperature
Operation Temperature
Storage Temperature
V
V
V
V
V
V
V
V/ns
W
mW/°C
°C/W
°C
°C
°C
VB
VS
VHO
VCC
VLO
VDD
VIN
dVS/dt
Pt
K q
Rth(j-c)
Tj
Topr
Tstg
Symbol Parameter Conditions Ratings Unit
RECOMMENDED OPERATING CONDITIONS
FUNCTION T ABLE
LO = OFF, HO = OFF
LO = ON, HO = OFF
LO = OFF, HO = ON
LO = OFF, HO = OFF, LIN = HIN = H simultaneously
LO = OFF, HO = OFF, VBS UV tripped
LO = ON, HO = OFF, VBS UV tripped
LO = OFF, HO = OFF, VCC UV tripped
LO = OFF, HO = ON, VCC UV tripped
L
L
H
H
X
✕
L
H
HIN Behavioral state
LIN VBS UV VCC UV HO LO
L
H
L
H
L
H
X
✕
H
H
H
H
L
L
H
H
H
H
H
H
H
H
L
L
L
L
H
L
L
L
L (Note)
H(Note)
L
H
L
L
L
H
L
L
Note : “L” state of VBS UV and VCC UV mean that UV trip voltage.
Even VCC UV is tripped, HO state is not changed.
When VCC is lower than UV trip voltage, HIN state can not be propagated to HO.
MITSUBISHI SEMICONDUCTORS <HVIC>
M63991FP
HIGH VOLTAGE HALF BRIDGE DRIVER
Sep. 2000
MITSUBISHI SEMICONDUCTORS <HVIC>
M63991FP
HIGH VOLTAGE HALF BRIDGE DRIVER
µA
mA
mA
µA
V
V
V
V
µA
µA
V
V
µs
V
V
µs
A
A
Ω
Ω
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
—
0.2
0.2
—
13.8
—
2.1
0.6
—
—
9.5
10.0
—
9.5
10.0
—
—
—
—
—
250
230
—
—
250
230
—
—
—
—
—
0.5
0.5
—
14.4
—
3.0
1.5
25
—
10.5
11.0
7.5
10.5
11.0
7.5
–0.5
0.5
40
20
300
280
80
60
300
280
80
60
—
—
1.0
1.0
1.0
100
—
0.1
4.0
1.9
75
1.0
11.5
12.0
—
11.5
12.0
—
—
—
—
—
350
330
—
—
350
330
—
—
30
30
Floating Supply Leakage Current
VBS standby Current
VCC standby Current
VDD standby Current
High Level Output Voltage
Low Level Output Voltage
High Level Input Threshold Voltage
Low Lev el Input Threshold Voltage
High Level Input Bias Current
Low Level Input Bias Current
VBS Supply UV Trip Voltage
VBS Supply UV Reset Voltage
VBS Supply UV Filter Time
VCC Supply UV Tr ip Voltage
VCC Supply UV Reset Voltage
VCC Supply UV Filter Time
Output High Level Short Circuit Pulsed Current
Output Low Level Short Circuit Pulsed Current
Output High Level On resistance
Output Low Level On resistance
High Side Turn-On Propagation Delay
High Side Turn-Off Propagation Delay
High Side Turn-On Rise Time
High Side Tur n-Off Fall Time
Low Side Turn-On Propagation Delay
Low Side Turn-Off Propagation Delay
Low Side Tur n-On Rise Time
Low Side Turn-Off Fall Time
Delay Matching, High Side and Low Side Turn-On
Delay Matching, High Side and Low Side Turn-Off
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
VB=VS=600V
IO=0A, LO, HO
IO=0A, LO, HO
HIN, LIN
HIN, LIN
VIN=5V
VIN=0V
VO=0V, VIN=5V, PW<10µs
VO=15V, VIN=0V, PW<10µs
IO=–200mA, ROH=(VOH-VO)/IO
IO=200mA, ROL=VO/IO
CL=1000pF between HO – VS
CL=1000pF between HO – VS
CL=1000pF between HO – VS
CL=1000pF between HO – VS
CL=1000pF between LO – GND
CL=1000pF between LO – GND
CL=1000pF between LO – GND
CL=1000pF between LO – GND
|tdLH(HO)-tdLH(LO)|
|tdHL(HO)-tdHL(LO)|
IFS
IBS
ICC
IDD
VOH
VOL
VIH
VIL
IIH
IIL
VBSUVT
VBSUVR
tVBSUV
VCCUVT
VCCUVR
tVCCUV
IOH
IOL
ROH
ROL
tdLH(HO)
tdHL(HO)
tr(HO)
tf(HO)
tdLH(LO)
tdHL(LO)
tr(LO)
tf(LO)
tdMon
tdMoff
ELECTRICAL CHARACTERISTICS (Ta=25°C, VCC=VBS=15V, VDD=5V unless otherwise specified)
Sep. 2000
MITSUBISHI SEMICONDUCTORS <HVIC>
M63991FP
HIGH VOLTAGE HALF BRIDGE DRIVER
Low side gate drive output
Ground
Low side supply
High side floating supply (minus side)
High side floating supply (plus side)
High side gate drive output
Logic supply
Logic input for high side gate driver output (HO)
Logic input for low side gate driver output (LO)
Lead symbol Description
LO
GND
VCC
VS
VB
HO
VDD
HIN
LIN
LEAD DEFINITIONS
TIMING DIAGRAM
1. Input/Output Timing Diagram
HIN
LIN
HO
LO
2. VCC(VBS) Supply Undervoltage Lockout Timing Diagram
VCC (VBS)
LO (HO)
LIN (HIN)
tVCCU (tVBSUV)
VCCUVT (VBSUVT) VCCUVR (VBSUVR)
Sep. 2000
MITSUBISHI SEMICONDUCTORS <HVIC>
M63991FP
HIGH VOLTAGE HALF BRIDGE DRIVER
PERFORMANCE CURVES
IFS vs. Temperature IBS vs. Temperature
10
7
8
9
6
5
3
2
1
0
–20 2507550 125100 –20 2507550 125100
4
–1
Ta (°C)
IFS (µA)
IIH (µA)
Ta (°C)
–20 2507550 125100 –20 2507550 125100
VIH, VIL vs. Temperature ICC vs. Temperature
1.0
0.8
0.6
0.4
0.2
IBS (mA)
–20 2507550 125100 –20 2507550 125100
UVT, UVR vs. Temperature IIH vs. Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VIH, VIL (V)
VIH
VIL
Ta (°C)
1.0
0.8
0.6
0.4
0.2
ICC (mA)
Ta (°C)
30
25
20
15
10
5
0
Ta (°C)
12.0
11.5
11.0
10.5
10.0
9.5
UVT, UVR (V)
Ta (°C)
UVT
UVR
Sep. 2000
MITSUBISHI SEMICONDUCTORS <HVIC>
M63991FP
HIGH VOLTAGE HALF BRIDGE DRIVER
IOH, IOL vs. Temperature IOH, IOL vs. Voltage
1000
700
800
900
600
500
–20 2507550 125100 1413 1615 20191817
Ta (°C)
IOH, IOL (mA)
ROH (Ω)
VB, VCC (V)
–20 2507550 125100
ROL vs. Temperature ROL vs. Voltage
1000
900
800
700
600
500
IOH, IOL (mA)
–20 2507550 125100
ROH vs. Temperature ROH vs. Voltage
20.0
15.0
5.0
10.0
0.0
ROL (Ω)
Ta (°C)
20.0
15.0
10.0
5.0
0.0
ROL (Ω)
VB, VCC (V)
35.0
30.0
25.0
20.0
15.0
VB, VCC (V)
35.0
30.0
25.0
20.0
15.0
ROH (Ω)
Ta (°C)
1413 1615 20191817
1413 1615 20191817
Sep. 2000
MITSUBISHI SEMICONDUCTORS <HVIC>
M63991FP
HIGH VOLTAGE HALF BRIDGE DRIVER
tdLH, tdHL vs. Temperature tdLH, tdHL vs. Voltage
450
400
350
250
200
–20 2507550 125100 1413 1615 20191817
300
450
400
350
250
200
300
Ta (°C)
tdLH, tdHL (ns)
VB, VCC (V)
10 100 1000
Power Loss vs. Frequency Power Loss Frequency (HV=0V)
tdLH, tdHL (ns)
10000
1000
100
10
1
Power Loss (mW)
Frequency (kHz)
Power Loss (mW)
Frequency (kHz)
10 100 1000
1000
100
10
1
2.0
1.5
1.0
0.5
01251007550250
Power Dissipation Pt(W)
Ambient Temperature Ta (°C)
Thermal Derating Factor Characteristics
tdLH (HO)
tdLH (LO)
tdHL (HO)
tdHL (LO)
tdLH (HO)
tdLH (LO)
VB=VCC=15V, VDD=5V, CL=1000pF VB=VCC=15V
VDD=5V
VS=400V
VS=300V
CL=10000pF
CL=1000pF
CL=0pF
VS=200V
VS=100V
tdHL (HO)
tdHL (LO)
Sep. 2000
MITSUBISHI SEMICONDUCTORS <HVIC>
M63991FP
HIGH VOLTAGE HALF BRIDGE DRIVER
SOP16-P-300-1.27 Weight(g)
–
JEDEC Code 0.2
EIAJ Package Code Lead Material
Cu Alloy
16P2N-A
Plastic 16pin 300mil SOP
Symbol Min Nom Max
A
A
2
b
c
D
E
L
L
1
y
Dimension in Millimeters
H
E
A
1
I
2
–
–
.350
0
.180.010.25–
.57.40–
–
–
.271
.10–
.81.40.20.110.35.271.87.60.251–
.627–
.20.12
–
.50.250.210.45–
.18.80–
.10
–
b
2
–.760–
–
0°–8°
e
e
1
16
9
8
1
H
E
E
D
bey
FA
A
2
A
1
L
1
L
c
eb
2
e
1
I
2
Recommended Mount Pad
Detail F
PACKAGE OUTLINE
