ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW20N135R3 Datasheet IndustrialPowerControl IHW20N135R3 ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode Features: C *Offersnewhigherbreakdownvoltageto1350Vforimproved reliability *Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly *TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat *LowEMI *QualifiedaccordingtoJESD-022fortargetapplications *Pb-freeleadplating;RoHScompliant *Halogenfree(accordingtoIEC61249-2-21) *CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G G C E E Applications: *Inductivecooking *Inverterizedmicrowaveovens *Resonantconverters *Softswitchingapplications Packagepindefinition: *Pin1-gate *Pin2&backside-collector *Pin3-emitter KeyPerformanceandPackageParameters Type IHW20N135R3 VCE IC VCEsat,Tvj=25C Tvjmax Marking Package 1350V 20A 1.6V 175C H20R1353 PG-TO247-3 2 Rev.2.2,2015-01-26 IHW20N135R3 ResonantSwitchingSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 3 Rev.2.2,2015-01-26 IHW20N135R3 ResonantSwitchingSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emitter voltage VCE 1350 V DCcollectorcurrent,limitedbyTvjmax TC=25C TC=100C IC 40.0 20.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 60.0 A TurnoffsafeoperatingareaVCE1350V,Tvj175C - 60.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25C TC=100C IF 40.0 20.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 60.0 A Gate-emitter voltage TransientGate-emittervoltage(tp10s,D<0.010) VGE 20 25 V PowerdissipationTC=25C PowerdissipationTC=100C Ptot 310.0 155.0 W Operating junction temperature Tvj -40...+175 C Storage temperature Tstg -55...+175 C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.48 K/W Diode thermal resistance, junction - case Rth(j-c) 0.48 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W 4 Rev.2.2,2015-01-26 IHW20N135R3 ResonantSwitchingSeries ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. 1350 - - VGE=15.0V,IC=20.0A Tvj=25C Tvj=125C Tvj=175C - 1.60 1.80 1.90 1.80 - - 1.60 1.73 1.80 1.80 6.4 Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA Collector-emitter saturation voltage VCEsat V V Diode forward voltage VF VGE=0V,IF=20.0A Tvj=25C Tvj=125C Tvj=175C Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 5.1 5.8 Zero gate voltage collector current ICES VCE=1350V,VGE=0V Tvj=25C Tvj=175C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=20.0A - 14.8 - S Integrated gate resistor rG V V 100.0 A 2500.0 none ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. - 1500 - - 55 - - 45 - - 195.0 - Unit DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG VCE=25V,VGE=0V,f=1MHz VCC=1080V,IC=20.0A, VGE=15V pF nC SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 335 - ns - 50 - ns - 1.30 - mJ IGBTCharacteristic,atTvj=25C Turn-off delay time td(off) Fall time tf Turn-off energy Eoff Tvj=25C, VCC=600V,IC=20.0A, VGE=0.0/15.0V, RG(on)=15.0,RG(off)=15.0, L=175nH,C=40pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. 5 Rev.2.2,2015-01-26 IHW20N135R3 ResonantSwitchingSeries SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 405 - ns - 100 - ns - 2.25 - mJ IGBTCharacteristic,atTvj=175C Turn-off delay time td(off) Fall time tf Turn-off energy Eoff Tvj=175C, VCC=600V,IC=20.0A, VGE=0.0/15.0V, RG(on)=15.0,RG(off)=15.0, L=175nH,C=40pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. 6 Rev.2.2,2015-01-26 IHW20N135R3 ResonantSwitchingSeries 70 100 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 60 50 40 TC=80 30 TC=110 20 tp=1s 10 5s 10s 50s 1ms 1 10ms DC 10 0 1 10 100 0.1 1000 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tvj175C,D=0.5,VCE=600V,VGE=0/15V, RG=15) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25C,Tvj175C;VGE=15V) 350 45 40 300 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 35 250 200 150 100 30 25 20 15 10 50 0 5 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[C] 25 50 75 100 125 150 175 TC,CASETEMPERATURE[C] Figure 3. Powerdissipationasafunctionofcase temperature (Tvj175C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE15V,Tvj175C) 7 Rev.2.2,2015-01-26 IHW20N135R3 ResonantSwitchingSeries 60 60 VGE=20V VGE=20V 50 17V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 50 15V 40 13V 11V 9V 30 7V 20 10 0 17V 15V 40 13V 11V 9V 30 7V 5V 20 10 0 1 2 3 4 0 5 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=25C) 3 4 5 3.0 VCEsat,COLLECTOR-EMITTERSATURATION[V] Tj=25C Tj=175C 60 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tvj=175C) 70 50 40 30 20 10 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 0 2 4 6 8 10 IC=10A IC=20A IC=40A 2.5 2.0 1.5 1.0 12 VGE,GATE-EMITTERVOLTAGE[V] 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 7. Typicaltransfercharacteristic (VCE=20V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.2,2015-01-26 IHW20N135R3 ResonantSwitchingSeries td(off) tf td(off) tf 1000 t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 100 10 0 10 20 30 100 10 40 10 20 IC,COLLECTORCURRENT[A] 30 40 50 RG,GATERESISTANCE[] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=175C,VCE=600V, VGE=0/15V,RG(on)=15,RG(off)=15,dynamic test circuit in Figure E) Figure 10. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,Tvj=175C,VCE=600V, VGE=0/15V,IC=20A,dynamictestcircuitin Figure E) 8 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf t,SWITCHINGTIMES[ns] 1000 100 10 25 50 75 100 125 150 7 6 5 4 3 2 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=600V,VGE=0/15V, IC=20A,RG(on)=15,RG(off)=15,dynamic test circuit in Figure E) typ. max. min. 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.5mA) 9 Rev.2.2,2015-01-26 IHW20N135R3 ResonantSwitchingSeries 4 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 4 Eoff 3 2 1 0 0 10 20 30 2 1 0 40 Eoff 3 10 20 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175C,VCE=600V, VGE=0/15V,RG(on)=15,RG(off)=15, dynamic test circuit in Figure E) 50 4 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 40 Figure 14. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,Tvj=175C,VCE=600V, VGE=0/15V,IC=20A,dynamictestcircuitin Figure E) 4 Eoff 3 2 1 0 30 RG,GATERESISTANCE[] 25 50 75 100 125 150 Eoff 2 1 0 400 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=600V,VGE=0/15V, IC=20A,RG(on)=15,RG(off)=15,dynamic test circuit in Figure E) 3 500 600 700 800 900 1000 1100 1200 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175C,VGE=0/15V, IC=20A,RG(on)=15,RG(off)=15,dynamic test circuit in Figure E) Rev.2.2,2015-01-26 IHW20N135R3 ResonantSwitchingSeries 2.5 16 IC=40A, Tj=25C IC=40A, Tj=175C 270V 1080V 2.0 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 14 1.5 1.0 0.5 12 10 8 6 4 2 0.0 100 0 1000 0 50 dv/dt,VOLTAGESLOPE[V/s] 100 150 200 QGE,GATECHARGE[nC] Figure 17. Typicalturnoffswitchingenergylossfor softswitching (inductiveload,Tvj=175C,VGE=0/15V, IC=20A,RG=15,dynamictestcircuitin Figure E) Figure 18. Typicalgatecharge (IC=20A) 1 Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] Ciss Coss Crss C,CAPACITANCE[pF] 1000 100 10 0 10 20 30 40 50 60 70 80 90 D=0.5 0.2 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 6 ri[K/W]: 9.8E-3 0.01407993 0.0698 0.1158 0.1569 0.1137 i[s]: 2.8E-5 4.7E-5 2.0E-4 1.2E-3 9.9E-3 0.08835259 0.001 1E-6 100 VCE,COLLECTOR-EMITTERVOLTAGE[V] 0.1 0.1 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 19. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 20. IGBTtransientthermalresistance (D=tp/T) 11 Rev.2.2,2015-01-26 IHW20N135R3 ResonantSwitchingSeries 1 40 Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] Tj=25C Tj=175C D=0.5 IF,FORWARDCURRENT[A] 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 30 20 10 i: 1 2 3 4 5 6 ri[K/W]: 9.8E-3 0.0141 0.0698 0.1158 0.1569 0.1137 i[s]: 2.8E-5 4.7E-5 2.0E-4 1.2E-3 9.9E-3 0.08835259 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 0 1 tp,PULSEWIDTH[s] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF,FORWARDVOLTAGE[V] Figure 21. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) Figure 22. Typicaldiodeforwardcurrentasafunction offorwardvoltage 3.0 VF,FORWARDVOLTAGE[V] IC=10A IC=20A IC=40A 2.5 2.0 1.5 1.0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 23. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 12 Rev.2.2,2015-01-26 IHW20N135R3 ResonantSwitchingSeries PG-TO247-3 13 Rev.2.2,2015-01-26 IHW20N135R3 ResonantSwitchingSeries VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 14 Rev.2.2,2015-01-26 IHW20N135R3 Resonant Switching Series Revision History IHW20N135R3 Revision: 2015-01-26, Rev. 2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2011-05-03 Final data sheet 2.2 2015-01-26 Minor changes We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 Munchen, Germany (c) 2015 Infineon Technologies AG All Rights Reserved. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 15 Rev. 2.2, 2015-01-26 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: IHW20N135R3FKSA1