UNISONIC TECHNOLOGIES CO., LTD
UT50N03
Power MOSFET
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Copyright © 2008 Unisonic Technologies Co., Ltd QW-R502-168.A
N-CHANNEL
ENHANCEMENT MODE
FEATURES
* RDS(ON) = 14mΩ @VGS = 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
1.Gate
3.Source
2.Drain
*Pb-free plating product number: UT50N03L
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Plating Package 1 2 3 Packing
UT50N03-TN3-R UT50N03L-TN3-R TO-252 G D S Tape Reel
UT50N03-TN3-T UT50N03L-TN3-T TO-252 G D S Tube
UT50N03 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS (TJ = 25℃, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 25 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current ID 45 A
Pulsed Drain Current (Note 4) IDM 180 A
Single Pulsed Avalanche Energy (Note 3) EAS 20 mJ
Total Power Dissipation P
D 50 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL MIN TYP MAX UNIT
Junction-to-Ambient (Note 4) θJA 71.4
℃/W
Junction-to-Case θJC 3.0
℃/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS V
GS =0V, ID =250 µA 25 V
Drain-Source Leakage Current IDSS V
DS=20V, VGS =0V 1.5 µA
Gate-Source Leakage Current IGSS V
DS =0V, VGS = ±20V ±100 nA
ON CHARACTERISTICS
Gate-Threshold Voltage VGS(TH) VDS =VGS, ID =250 µA 1.0 1.7 2.0 V
ID = 30 A 12
VGS = 11.5V ID = 15 A 11.7
VGS = 10 V ID = 30 A 12.5 14
ID = 30 A 21
Drain-Source On-State Resistance RDS(ON)
VGS = 4.5V ID = 15 A 19 23
mΩ
DYNAMIC PARAMETERS
Input Capacitance CISS 610 750
Output Capacitance COSS 300
Reverse Transfer Capacitance CRSS
VDS=12V, VGS =0V, f=1MHz
125
pF
SWITCHING PARAMETERS
Turn-ON Delay Time tD(ON) 8.2
Turn-ON Rise Time tR 9.6
Turn-OFF Delay Time tD(OFF) 11.2
Turn-OFF Fall-Time tF
VGS = 4.5 V, VDS =15 V,
ID = 30 A, RG = 3.0Ω
6.8
ns
Turn-ON Delay Time tD(ON) 5.0
Turn-ON Rise Time tR 84
Turn-OFF Delay Time tD(OFF) 15
Turn-OFF Fall-Time tF
VGS = 11.5 V, VDS =15 V,
ID = 30 A, RG = 3.0Ω
4.0
ns
Total Gate Charge QG 6.0 10
Gate-to-Source Charge QGS 1.9
Gate-to-Drain Charge QGD
VDS =15V,VGS =4.5V,
ID =30 A 3.7
nC
Total Gate Charge QG 15
Gate-to-Source Charge QGS 1.9
Gate-to-Drain Charge QGD
VDS =15V,VGS =11.5V,
ID =30 A 3.9
nC
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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage VSD I
S=30 A, VGS =0V 0.85 1.1 V
Maximum Continuous Drain-Source Diode
Forward Current IS 45 A
Reverse Recovery Time tRR 24 ns
Reverse Recovery Charge QRR
IS = 30 A, VGS = 0 V,
dI /dt = 100 A/µs 14 nC
Note: 1. Pulse width limited by TJ(MAX)
2. Pulse Test: Pulse Width≤300 s, Duty Cycle≤2%.
3. L = 19.5mH, IAS = 6.3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. Surface-mounted on FR4 board using 1 sq in pad, 1 oz Cu.
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TYPICAL CHARACTERISTICS
Drain Current,ID(A)
Drain Current,ID(A)
ID=15A
TJ=25℃
0.065
0.055
0.045
0.035
0.025
0.015
0.005
10987654
32
Gate-to-Source Voltage,VGS (V)
Drain-to-Source Resistance,RDS(ON) (Ω)
On-Resistance versus Gate-to-
Source Voltage
VGS=4.5V
VGS=10V
TJ=25℃
10 20 30 40 50
Drain Current,ID(A)
0.030
0.025
0.020
0.015
0.010
0.005
0
On-Resistance versus Drain Current
and Gate Voltage
Drain-to-Source Resistance,RDS(ON) (Ω)
Capacitance,C (pF)
Leakage,IDSS (nA)
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TYPICAL CHARACTERISTICS(Cont.)
Source Current,I
S
(A)
t,TIME (ns)
Drain Current,ID(A)
Gate-to-Source Voltage,V
GS
(V)
Drain-to-Source Voltage,VDS (V)
Effective Transient Thermal Resistance
(Normalized),r (t)
UT50N03 Power MOSFET
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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
