IR IGBT
IRGB4630DPbF
IRGIB4630DPbF
IRGP4630D(-E)PbF
IRGS4630DPbF
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRGB4630DPbF TO-220AB Tube 50 IRGB4630DPbF
IRGP4630DPbF TO-247AC Tube 25 IRGP4630DPbF
IRGP4630D-EPbF TO-247AD Tube 25 IRGP4630D-EPbF
Tube 50 IRGS4630DPbF
IRGS4630DPbF D2Pak Tape and Reel Right 800 IRGS4630DTRRPbF
Tape and Reel Left 800 IRGS4630DTRLPbF
IRGIB4630DPbF TO-220AB Full-Pak Tube 50 IRGIB4630DPbF
VCES = 600V
IC = 30A, TC =100°C
tSC ≥ 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 18A
Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding
Features Benefits
Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching
frequencies
Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching
performance and high power capability
Positive VCE (ON) temperature coefficient and tight distribution
of parameters Excellent current sharing in parallel operation
5µs Short Circuit SOA Enables short circuit protection scheme
Lead-Free, RoHS Compliant Environmentally friendly
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
G C E
Gate Collector Emitter
IRGP4630DPbF
TO-247AC
E
G
n-channel
C
IRGS4630DPbF
D2Pak
IRGIB4630DPbF
TO-220AB Full-Pak
C E
G
C
C
C E
G
IRGP4630D-EPbF
TO-247AD
C E
G
C
IRGB4630DPbF
TO-220AB
C
E
C
G
E
C
G
1 2015-11-23
IRGB/IB/P/S4630D/EPbF
2 2015-11-23
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 47
A
IC @ TC = 100°C Continuous Collector Current 30
ICM Pulse Collector Current, VGE=15V 54
ILM Clamped Inductive Load Current, VGE=20V 72
IF @ TC = 25°C Diode Continuous Forward Current 30
IF @ TC = 100°C Diode Continuous Forward Current 18
VGE Continuous Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 206 W
PD @ TC = 100°C Maximum Power Dissipation 103
TJ Operating Junction and -40 to +175
C
TSTG Storage Temperature Range
Soldering Temperature, for 10 sec. (1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247) 10 lbf·in (1.1 N·m)
IFM Diode Maximum Forward Current 72
Transient Gate to Emitter Voltage ±30
Thermal Resistance
Parameter Min. Typ. Max.
Units
RθJC (IGBT) Thermal Resistance Junction-to-Case (D2Pak, TO-220) ––– ––– 0.73
°C/W
RθCS Thermal Resistance, Case-to-Sink (flat, greased surface-TO-220, D2Pak,
TO-220 Full-Pak ) ––– 0.5 –––
RθJA Thermal Resistance, Junction-to-Ambient (PCB Mount - D2Pak) ––– ––– 40
RθJC (Diode) Thermal Resistance Junction-to-Case (D2Pak, TO-220) ––– ––– 2.0
Thermal Resistance Junction-to-Case (TO-247) ––– ––– 0.78
Thermal Resistance Junction-to-Case (TO-247) ––– ––– 2.1
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220) ––– ––– 62
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-247) ––– ––– 40
Thermal Resistance Junction-to-Case (TO-220 Full-Pak) ––– ––– 3.4
Thermal Resistance Junction-to-Case (TO-220 Full-Pak) ––– ––– 4.6
Thermal Resistance Case-to-Sink (TO-247) ––– 0.24 –––
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220 Full-Pak) ––– ––– 65
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100µA
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 0.40 — V/°C VGE = 0V, IC = 1mA (25°C-175°C)
VCE(on) Collector-to-Emitter Saturation Voltage
— 1.65 1.95 IC = 18A, VGE = 15V, TJ = 25°C
— 2.05 — IC = 18A, VGE = 15V, TJ = 150°C
VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 500µA
ΔVGE(th)/ΔTJ Threshold Voltage Temp. Coefficient — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C)
gfe Forward Transconductance — 12 — S VCE = 50V, IC = 18A, PW = 80µs
ICES Collector-to-Emitter Leakage Current — 2.0 25 µA VGE = 0V, VCE = 600V
— 550 — VGE = 0V, VCE = 600V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
VFM Diode Forward Voltage Drop — 2.3 3.3 V IF = 18A
— 1.6 — IF = 18A, TJ = 175°C
— 2.15 — IC = 18A, VGE = 15V, TJ = 175°C
V
IRGB/IB/P/S4630D/EPbF
3 2015-11-23
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
Qg Total Gate Charge — 35 —
nC
IC = 18A
Qge Gate-to-Emitter Charge — 10 — VGE = 15V
Qgc Gate-to-Collector Charge — 15 — VCC = 400V
Eon Turn-On Switching Loss — 95 —
µJ IC = 18A, VCC = 400V, VGE=15V
RG = 22Ω, L = 200µH, LS = 150nH,
TJ = 25°C
Energy losses include tail & diode
reverse recovery
Eoff Turn-Off Switching Loss — 350 —
Etotal Total Switching Loss — 445 —
td(on) Turn-On delay time — 40 —
ns
tr Rise time — 25 —
td(off) Turn-Off delay time — 105 —
tf Fall time — 25 —
Eon Turn-On Switching Loss — 285 —
µJ IC = 18A, VCC = 400V, VGE=15V
RG = 22Ω, L = 200µH, LS = 150nH,
TJ = 175°C
Energy losses include tail & diode
reverse recovery
Eoff Turn-Off Switching Loss — 570 —
Etotal Total Switching Loss — 855 —
td(on) Turn-On delay time — 40 —
ns
tr Rise time — 25 —
td(off) Turn-Off delay time — 120 —
tf Fall time — 40 —
Cies Input Capacitance — 1040 — VGE = 0V
Coes Output Capacitance — 87 — pF VCC = 30V
Cres Reverse Transfer Capacitance — 32 — f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area
TJ = 175°C, IC = 72A
FULL SQUARE VCC = 480V, Vp ≤ 600V
RG = 22Ω, VGE = +20V to 0V
SCSOA Short Circuit Safe Operating Area 5.0 — — µs VCC = 400V, Vp ≤ 600V
RG = 22Ω, VGE = +15V to 0V
Erec Reverse Recovery Energy of the Diode — 260 — µJ TJ = 175°C
trr Diode Reverse Recovery Time — 100 — ns VCC = 400V, IF = 18A, VGE = 15V,
Irr Peak Reverse Recovery Current — 23 — A Rg = 22Ω, L = 200µH, LS = 150nH
Notes:
Limited by maximum junction temperature. Not applicable for Full-Pak package: current value limited by Rθ JC.
R
θ is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Pulse width limited by maximum junction temperature.
Values influenced by parasitic L and C in measurement.
When mounted on 1” square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994.http://www.irf.com/technical-info/appnotes/an-994.pdf
V
CC = 80% (VCES), VGE = 20V, L = 100µH, RG = 22Ω.
IRGB/IB/P/S4630D/EPbF
4 2015-11-23
25 50 75 100 125 150 175
TC (°C)
0
10
20
30
40
50
IC (A)
1 10 100 1000 10000
VCE (V)
0.1
1
10
100
IC (A)
1msec
10µsec
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
25 50 75 100 125 150 175
TC (°C)
0
50
100
150
200
250
Ptot (W)
10 100 1000
VCE (V)
1
10
100
IC (A)
Fig. 2 - Power Dissipation vs.
Case Temperature
012345678
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
012345678
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
IRGB/IB/P/S4630D/EPbF
5 2015-11-23
0.0 1.0 2.0 3.0 4.0 5.0
VF (V)
0
20
40
60
80
100
IF (A)
-40°c
25°C
175°C
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 9.0A
ICE = 18A
ICE = 36A
Fig. 8 - Typ. Diode Forward Voltage Drop
Characteristics
012345678
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 9.0A
ICE = 18A
ICE = 36A
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80µs
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 9.0A
ICE = 18A
ICE = 36A
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
0 5 10 15 20
VGE (V)
0
20
40
60
80
100
120
140
160
180
ICE (A)
TJ = 25°C
TJ = 175°C
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
IRGB/IB/P/S4630D/EPbF
6 2015-11-23
010 20 30 40
IF (A)
0
5
10
15
20
25
30
35
IRR (A)
RG = 10Ω
RG = 22Ω
RG = 47Ω
RG = 100Ω
5 10152025303540
IC (A)
0
200
400
600
800
1000
1200
1400
Energy (µJ)
EOFF
EON
0255075100125
Rg ( Ω)
0
100
200
300
400
500
600
700
800
900
Energy (µJ)
EOFF
EON
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 18A; VGE = 15V
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15V
025 50 75 100 125
RG (Ω)
0
5
10
15
20
25
30
35
40
IRR (A)
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 175°C
510 15 20 25 30 35 40 45
IC (A)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
025 50 75 100 125
RG (Ω)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 18A; VGE = 15V
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15V
IRGB/IB/P/S4630D/EPbF
7 2015-11-23
0 500 1000 1500
diF /dt (A/µs)
400
600
800
1000
1200
1400
1600
QRR (µC)
10Ω
22Ω
100Ω
47Ω
18A
36A
9.0A
8 1012141618
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
Time (µs)
20
30
40
50
60
70
80
90
100
110
120
Current (A)
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
010 20 30 40
IF (A)
0
50
100
150
200
250
300
350
400
Energy (µJ)
RG = 10Ω
RG = 22Ω
RG = 47Ω
RG = 100Ω
020 40 60 80 100
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 175°C
0500 1000 1500
diF /dt (A/µs)
0
5
10
15
20
25
30
35
40
IRR (A)
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 18A; TJ = 175°C
0 5 10 15 20 25 30 35
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES = 300V
VCES = 400V
Fig. 23 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
Fig. 24 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 25 - Typical Gate Charge vs. VGE
ICE = 18A; L = 600µH
IRGB/IB/P/S4630D/EPbF
8 2015-11-23
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT-TO-220Pak)
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE- TO-220Pak)
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
C
τ
C
Ci= τi/Ri
Ci= τi/Ri
Ri (°C/W) τi (sec)
0.244 0.000084
1.102 0.001770
0.655 0.013544
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
C
τ
C
Ci = τi/Ri
Ci= τi/Ri
Ri (°C/W) τi (sec)
0.3193 0.000273
0.4104 0.004525
IRGB/IB/P/S4630D/EPbF
9 2015-11-23
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit
0
1K
VCC
DUT
L
L
Rg
80 V
DUT VCC
+
-
DC
4X
DUT
VCC
R
SH
L
Rg
VCC
DUT /
DRIVER
diode clamp /
DUT
-5V
Rg
VCC
DUT
R = VCC
ICM
G force
C sense
100K
DUT
0.0075µF
D1 22K
E force
C force
E sense
IRGB/IB/P/S4630D/EPbF
10 2015-11-23
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
-5
0
5
10
15
20
25
30
-100
0
100
200
300
400
500
600
-5.70 -5.20 -4.70 -4.20
I
CE
(A)
V
CE
(V)
Time
(µ
s
)
E
OFF
Loss
5% V
CE
5% I
CE
90% I
CE
tf
-10
0
10
20
30
40
50
60
-100
0
100
200
300
400
500
600
-0.15 0.05 0.25
ICE (A)
VCE (V)
Time (µs)
EON
TEST
90% test
10% test current
5% V
CE
tr
-40
-30
-20
-10
0
10
20
30
-0.05 0.05 0.15
I
RR
(A)
Time (µs)
Peak
I
RR
Q
RR
t
RR
10%
Peak
I
RR
-50
0
50
100
150
200
250
-100
0
100
200
300
400
500
-5.00 0.00 5.00 10.00
I
CE
(A)
V
CE
(V)
Time (µs)
V
CE
I
CE
IRGB/IB/P/S4630D/EPbF
11 2015-11-23
LOT CODE 1789
EXAM PLE: TH IS IS AN IRF1010
N o te : "P " in a s s e m b ly lin e p o s itio n
indicates "Lead - Free"
IN TH E ASSEM BLY LIN E "C"
ASSEM B LED O N W W 19, 2000
IN T E R N A T IO N A L PART NUMBER
R E C T IF IE R
LO T C O D E
ASSEM BLY
LO G O
YEAR 0 = 2000
DATE CODE
WEEK 19
LIN E C
TO-220AB package is not recommended for Surface Mount Application.
TO-220AB Part Marking Information
TO-220AB Package Outline
(Dimensions are shown in millimeters (inches))
IRGB/IB/P/S4630D/EPbF
12 2015-11-23
TO-220AB Full-Pak package is not recommended for Surface Mount Application.
TO-220AB Full– Pak Part Marking Information
TO-220AB Full– Pak Package Outline
(Dimensions are shown in millimeters (inches))
IRGB/IB/P/S4630D/EPbF
13 2015-11-23
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
YEAR 1 = 2001
DATE CODE
PART NUMBER
INTERNATIONAL
LOGO
RECTIFIER
ASSEMBLY
56 57
IRFPE30
135H
LINE H
indicates "Lead-Free" WEEK 35
LOT CODE
IN THE ASSEMBLY LINE "H"
ASSEMBLED ON WW 35, 2001
Notes: This part marking information applies to devices produced after 02/26/2001
Note: "P" in assembly line position
EXAMPLE:
WITH ASSEMBLY
THIS IS AN IRFPE30
LOT CODE 5657
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
IRGB/IB/P/S4630D/EPbF
14 2015-11-23
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
ASSEM BLY YEAR 0 = 2000
ASSEM BLED O N WW 35, 2000
IN THE ASSEM BLY LINE "H "
EXAM PLE: THIS IS AN IRGP30B120KD-E
LOT CO D E 5657
WITH ASSEMBLY PART NUMBER
DATE CODE
IN T E R N A T IO N A L
RECTIFIER
LO G O
035H
5 6 57
WEEK 35
LIN E H
LOT CODE
N o te : "P " in a s s e m b ly lin e p o s itio n
indicates "Lead-Free"
TO-247AD Part Marking Information
TO-247AD package is not recommended for Surface Mount Application.
IRGB/IB/P/S4630D/EPbF
15 2015-11-23
D2-PAK (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2-Pak (TO-263AB) Part Marking Information
DATE CODE
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
RECTIFIER
INTERNATIONAL PART NUMBER
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
F530S
IN THE ASSEMBLY LINE "L"
ASSEMBLED ON WW 02, 2000
THIS IS AN IRF530S WITH
LOT CODE 8024 INTERNATIONAL
LOGO
RECTIFIER
LOT CODE
ASSEMBLY YEAR 0 = 2000
PART NUMBER
DATE CODE
LINE L
WEEK 02
OR
F530S
LOGO
ASSEMBLY
LOT CODE
IRGB/IB/P/S4630D/EPbF
16 2015-11-23
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
D2Pak Tape & Reel Information
(Dimensions are shown in millimeters (inches))
IRGB/IB/P/S4630D/EPbF
17 2015-11-23
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Qualification Information†
Qualification Level Industrial
(per JEDEC JESD47F) ††
TO-220AB
TO-220AB-Full-Pak
Moisture Sensitivity Level TO-247AC
TO-247AD
D2Pak MSL1
RoHS Compliant Yes
N/A
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
