BD434/BD436/BD438
PNP Silicon
Power Transistors
Features
Intended for use in medium power near and switching applications
With TO-126 package
The complementary NPN type is BD433, BD435, BD437
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: B 2013/01/01
TM
Micro Commercial Components
www.mccsemi.com
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Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage BD434
BD436
BD438
-22
-32
-45
V
VCBO Collector-Base Voltage BD434
BD436
BD438
-22
-32
-45
V
VEBO Emitter-Base Voltage BD434
BD436
BD438 -5.0 V
IC Collector Current -4.0 A
PC Collector power dissipation 1.25 W
TJ Junction Temperature -55 to +150 к
TSTG Storage Temperature -55 to +150 к
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=-10mAdc, IB=0) BD434
BD436
BD438
-22
-32
-45
---
---
---
Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=-1mAdc, IE=0) BD434
BD436
BD438
-22
-32
-45
---
---
---
Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=-1mAdc, IC=0) -5 --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=-22Vdc,IE=0) BD434
(VCB=-32Vdc,IE=0) BD436
(VCB=-45Vdc,IE=0) BD438
--- -100 uAdc
ICEO Collector-Base Cutoff Current
(VCE=-22Vdc,IE=0) BD434
(VCE=-32Vdc,IE=0) BD436
(VCE=-45Vdc,IE=0) BD438
--- -100 uAdc
IEBO Emitter-Base Cutoff Current
(VEB=-5.0Vdc, IC=0) --- -1.0 mAdc
xMarking:Type Number
Maximum Ratings

 
     
0.291 0.3077.40 7.80
0.417 0.433 10.60 11.00
0.602 0.618 15.30 15.70
4 1 3.90 4.10
0.118 0.126 3.00 3.20
0.026 0.034 0.66 0.86
0.046 0.054 1.17 1.37
0.090TYP 2.290TYP
0.098 0.114 2.50 2.90
D
B
N
A
C
E
F
G
Q
K
M
N 0.043 0.059 1.10 1.50
Q 0.018 0.024 0.45 0.60
L
JPIN 1. EMITTER
PIN 2. COLLECTOR
PIN 3. BASE
1 2 3
L 0.083 0.091 2.10 2.30
M 0.000 0.012 0.00 0.30
DIMENSIONS
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.
Halogen free available upon request by adding suffix "-HF"
ON CHARACTERISTICS
hFE-1 DC Current Gain
(IC=-500mAdc, VCE=-1.0Vdc) 85 --- ---
hFE-2 DC Current Gain
(IC=-10mAdc, VCE=-5.0Vdc) BD434/BD436
BD438 40
30 ---
--- ---
hFE-3 DC Current Gain
(IC=-2Adc, VCE=-1.0Vdc) BD434/BD436
BD438 50
40 ---
--- ----
VCE(sat) Collector-Emitter Saturation Voltage
(IC=-2.0Adc, IB=-0.2Adc) BD434/BD436
BD438 -0.5
-0.6 ---
--- Vdc
VBE Base-Emitter Voltage
(VCE=-1.0Vdc,IC=-2.0Adc) BD434/BD436
BD438 -1.1
-1.2 ---
--- Vdc
fT Transition Frequency
(IC=-250mAdc, VCE=-1.0Vdc) 3.0 --- MHz
Revision: B 2013/01/01
MCC
BD434, BD436, BD438
TM
Micro Commercial Components
www.mccsemi.com
2 of 3
MCC
Revision: B 2013/01/01
TM
Micro Commercial Components
www.mccsemi.com
3 of 3
Ordering Information :
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approval of Micro Commercial Components Corporation.
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Device Packing
Part Number-BP
Bulk;1Kpcs/Box
Note : Adding "-HF" suffix for halogen free, eg. Part Number-BP-HF