DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
NPN SILICON RF TRANSISTO R
NE85634 / 2SC3357
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN POWER MINIMOLD
Document No. PU10211EJ01V0DS (1st edition)
(Previous No. P10357EJ4V1DS00)
Date Published January 2003 CP(K)
The mark •
••
• shows major revised poi nts.
FEATURES
• Low noise and high gain
NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz
• High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
• Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate)
• Small package : 3-pin power minimold package
ORDERING INFORMATION
Part Number Quantity Supplyi ng Form
NE85634-A
2SC3357-A 25 pcs (Non reel) • 12 mm wide embossed tapi ng
NE85634-T1-A
2SC3357-T1-A 1 kpcs / reel •Collect or f ace the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC100 mA
Total Power Dissipation Ptot Note 1.2 W
Junction Temperature Tj150 °C
Storage Temperat ure Tstg −65 to +150 °C
Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate
JEITA
Part No.
PHASE-OUT
Data Sheet PU10211EJ01V0DS
2
NE85634 / 2SC3357
THERMAL RESISTANCE
Parameter Symbol Value Unit
Junction to Ambient Resistance Rth (j-a) Note 62.5 °C/W
Note Mounted on 16 cm2× 0.7 mm (t) ceramic substrate
ELECTRICAL CHARACTERISTICS (TA = +25°
°°
°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 10 V, IE = 0 mA – – 1.0
μ
A
Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 mA – – 1.0
μ
A
DC Current Gain hFE Note 1 VCE = 10 V, IC = 20 mA 50 120250 –
RF Characteristics
Gain Bandwidth Product fTVCE = 10 V, IC = 20 mA – 6.5 – GHz
Insertion Power Gain ⏐S21e⏐2VCE = 10 V, IC = 20 mA, f = 1 GHz – 9.0 – dB
VFN)1( erugiF esioN CE = 10 V, IC = 7 mA, f = 1 GHz – 1.1 – dB
VFN)2( erugiF esioN CE = 10 V, IC = 40 mA, f = 1 GHz – 1.8 3.0 dB
Reverse Transfer Capacitance Cre Note 2 VCB = 10 V, IE = 0 mA, f = 1 MHz – 0.65 1.0 pF
Notes 1.Pulse measurement: PW ≤ 350
μ
s, Duty Cycle ≤ 2%
2. The emitter terminal and the case shall be connected to the guard terminal of the three-terminal
capacitance bridge.
hFE CLASSIFICATION
Rank RH RF RE
Marking RH RF RE
hFE Value 50 to 10080 to 160125 to 250
PHASE-OUT
Data Sheet PU10211EJ01V0DS 3
TYPICAL CHARACTERISTICS (TA = +25°
°°
°C, unless otherwise specified)
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
50
100
10
20
1 5 10 055.0
V
CE
= 10 V
2
1
025 50 75 100 125 150
Total Power Dissipation P
tot
(W)
Ambient Temperature T
A
(˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Ceramic substrate
16 cm
2
× 0.7 mm (t)
Free air R
th (j-a)
312.5˚C/W
Reverse Transfer Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
1
0.5
0.3 0.50.2 1 2 5 10 3020
f = 1 MHz
V
CE
= 10 V
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
3
2
5
0.2
0.3
0.5
1
0.1 1 5 10 50 0015.01.0
V
CE
= 10 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
15
10
0
5
0.5 1 10 50 075
V
CE
= 10 V
I
C
= 20 mA
Frequency f (GHz)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
25
15
20
5
10
0
0.05 0.1 0.5 1 22.0
MAG
|S
21e
|
2
NE85634 / 2SC3357
PHASE-OUT
Data Sheet PU10211EJ01V0DS
4
90
100
80
70
60
40
50
30 20 30 40 50 60 70
Collector Current I
C
(mA)
IM
2
, IM
3
vs. COLLECTOR CURRENT
2nd Order Intermodulation Distortion IM
2
(dBc)
3rd Order Intermodulation Distortion IM
3
(dBc)
IM
2
IM
3
V
CE
= 10 V
V
o
= 100 dB V/50 Ω
R
g
= R
e
= 50 Ω
IM
2
: f = 90 + 100 MHz
IM
3
: f = 2 × 200 – 190 MHz
μ
7
0
1
2
3
4
5
6
0.5 1 5 10 50 70
Collector Current I
C
(mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
Noise Figure NF (dB)
V
CE
= 10 V
f = 1 GHz
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
NE85634 / 2SC3357
PHASE-OUT
Data Sheet PU10211EJ01V0DS 5
SMITH CHART
S
21e
-FREQUENCY
CONDITION : V
CE
= 10 V, I
C
= 20 mA
90˚
0˚
30˚
–30˚
60˚
–60˚
180˚
150˚
–150˚
120˚
–120˚
–90˚
3 6 9 12 15
S
21e
f = 0.2 GHz
f = 2.0 GHz
S
12e
-FREQUENCY
CONDITION : V
CE
= 10 V, I
C
= 20 mA
90˚
0˚
30˚
–30˚
60˚
–60˚
180˚
150˚
–150˚
120˚
–120˚
–90˚
0.1 0.2 0.3 0.4 0.5
S
12e
f = 0.2 GHz
f = 2.0 GHz
S
11e
, S
22e
-FREQUENCY
CONDITION : V
CE
= 10 V
60
20
30
40
50
70
80
90
100
110
120
130
140
150
−160
−150
−140
−130
−120
−110
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
10
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.02
0.01
0
0.49
0.48
0.47
0.46
0.45
0.44
0.43
0.42
0.41
0.40
0.39
0.38
0.37
0.36
0.35
0.34
0.33
0.32
0.31
0.30
0.29
0.28
0.27
0.26
52.0
0.24
0.23
0.28
0.30
0.32
0.34
0.36
0.38
0.40
0.42
0.44
0.46
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
0.48
0.49
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.20
0.21
0.22
0.23
0.24
52.0
0.26
0.27
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
I
N
D
E
G
R
E
E
S
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
REACTANCE COMPONENT
(
R
––––
Z
O
)
(
+JX
––––
Z
O
)
P
OS
ITIVE
R
EA
C
TA
NC
E
CO
M
P
ON
EN
T
NE
G
AT
IVE
R
E
AC
TA
N
CE
C
OM
PO
NE
NT
(
−JX
––––
Z
O
)
0.8
0.7
0.6
0.3
0.2
0.1
0.4
0.5
5.0
10
50
3.0
4.0
1.8
2.0
1.2
0.1
0.9
1.4
1.6
20
2.0
50
10
6.0
4.0
3.0
1.8
1.6
1.4
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.1
20
0.2
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
0.2
1.0
0.8
0.6
0.4
1.0
0.8
0.6
0.2
0.4
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0
1.2
f = 0.2 GHz
f = 0.2 GHz
f = 2.0 GHz
f = 20 GHz
S
11e
S
22e
: I
C
= 20 mA
: I
C
= 40 mA
NE85634 / 2SC3357
PHASE-OUT
Data Sheet PU10211EJ01V0DS
6
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (UNIT: mm)
1.5±0.1
0.41
+0.03
–0.06
4.5±0.1
0.42±0.060.42±0.06
1.6±0.2
3.0
1.5
C
E B
2.5±0.1
4.0±0.25
0.8 MIN.
0.47±0.06
E : Emitter
C : Collector (Fin)
B : Base
(IEC : SOT-89)
PIN CONNECTIONS
NE85634 / 2SC3357
PHASE-OUT
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PHASE-OUT