NTMFS4C029N
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2
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 17 Apk, EAS = 14 mJ.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 5.3
°C/W
Junction−to−Ambient – Steady State (Note 4) RqJA 50.3
Junction−to−Ambient – Steady State (Note 5) RqJA 165.9
Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 22.2
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA30 V
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt VGS = 0 V, ID(aval) = 7.1 A,
Tcase = 25°C, ttransient = 100 ns
34 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
14.5 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 24 V
TJ = 25°C 1.0
mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.3 2.2 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ4.7 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 4.9 5.88
mW
VGS = 4.5 V ID = 15 A 7.41 9.0
Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 43 S
Gate Resistance RGTA = 25°C 0.3 1.0 2.0 W
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 15 V
987
pF
Output Capacitance COSS 574
Reverse Transfer Capacitance CRSS 162
Capacitance Ratio CRSS/CISS VGS = 0 V, VDS = 15 V, f = 1 MHz 0.165
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 30 A
9.7
nC
Threshold Gate Charge QG(TH) 1.5
Gate−to−Source Charge QGS 2.8
Gate−to−Drain Charge QGD 4.8
Gate Plateau Voltage VGP 3.2 V
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 18.6 nC
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
9.0
ns
Rise Time tr34
Turn−Off Delay Time td(OFF) 14
Fall Time tf7.0