MITSUBISHI SEMICONDUCTOR TRIAC BCR08AM-14 LOW POWER USE PLANAR PASSIVATION TYPE BCR08AM-14 OUTLINE DRAWING Dimensions in mm 5.0 MAX. VOLTAGE CLASS TYPE NAME 12.5 MIN. T1 TERMINAL T2 TERMINAL GATE TERMINAL CIRCUMSCRIBE CIRCLE 0.7 1.3 1.25 1.25 ............................................................... 0.8A ................................................................. 700V IFGT ! , IRGT ! , IRGT # ....................................... 5mA 3.9 MAX. 5.0 MAX. 4.4 IT (RMS) VDRM JEDEC : TO-92 APPLICATION Contactless AC switches, heating, refrigerator, washing machine, electric fan, vending machines, trigger circuit for low and medium triac, solid state relay, other general purpose control applications MAXIMUM RATINGS Symbol V DRM V DSM Voltage class Parameter Repetitive peak off-state Non-repetitive peak off-state voltage1 Symbol Unit 14 voltage1 V 700 840 Parameter V Conditions Ratings Unit I T (RMS) I TSM RMS on-state current Surge on-state current Commercial frequency, sine full wave 360 conduction, Tc=67C 60Hz sinewave 1 full cycle, peak value, non-repetitive 0.8 8 A A I 2t I 2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation PG (AV) VGM Average gate power dissipation Peak gate voltage I GM Tj Peak gate current Junction temperature T stg -- Storage temperature Weight Typical value 0.26 A2s 1 0.1 W W 6 V 1 -40 ~ +125 A C -40 ~ +125 0.23 C g 1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR08AM-14 LOW POWER USE PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Min. -- Typ. -- Max. 1.0 Unit I DRM Repetitive peak off-state current Tj=125C, VDRM applied V TM V FGT ! On-state voltage Tc=25C, ITM=1.2A, Instantaneous measurement -- -- -- -- 2.0 2.0 V RGT ! V RGT # Gate trigger voltage Tj=25C, VD=6V, RL=6, RG =330 -- -- -- -- 2.0 2.0 -- -- 5 -- -- -- -- 5 5 0.1 -- -- -- -- 50 C/ W 2 -- -- V/s ! @ # I FGT ! I RGT ! Gate trigger current I RGT # VGD Gate non-trigger voltage Tj=125C, VD=1/2VDRM Rth (j-c) Thermal resistance Junction to case 3 (dv/dt)c Critical-rate of rise of off-state commutating voltage ! @ Tj=25C, VD=6V, RL=6, RG =330 # mA V V V V mA mA mA V 2. The critical-rate of rise of the off-state commutating voltage is shown in the table below. 3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. Voltage class (dv/dt)c VDRM (V) Min. Commutating voltage and current waveforms (inductive load) Test conditions Unit SUPPLY VOLTAGE 1. Junction temperature Tj=125C 14 700 0.5 V/s 2. Rate of decay of on-state commutating current (di/dt) c=-0.4A/ms TIME (di/dt)c MAIN CURRENT TIME MAIN VOLTAGE (dv/dt)c 3. Peak off-state voltage VD=400V TIME VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 10 3 2 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 101 7 5 Tj = 25C 100 7 5 3 2 10-1 7 5 3 1.5 2.0 2.5 3.0 3.5 4.0 ON-STATE VOLTAGE (V) 5.0 8 6 4 2 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999