(Al eackann Schottky Barrier Diodes for Detectors Technical Data Features Improved Detection Sensitivity TSS of -55 dBm at 10 GHz * Low 1/ Noise Typical Noise-Temperature Ratio = 4 dB at 1 kHz High Peak Power Dissipation 4.5 W RF Peak Pulse Power Description/ Applications The low 1/ noise and high voltage sensitivity make these Schottky barrier diodes ideally suited for narrow bandwidth video detectors, and Doppler mixers as required in Doppler radar equipment, ECM receivers, and measurement equipment. Package Characteristics The HP Outline 15 package has a glass hermetic seal with plated Dumet leads which should be restricted so that the bend starts at least 1.16" (1.6 mm) from the glass body. With this restriction, it will meet MIL-STD-750, Method 2036, Condition A (4 lb. [1.8 kg] tension for 30 minutes). The maximum soldering tempera- CATHODE bp = 2.3 0h (2824) Lp * 3.0nh Cp + .20 pF (2824) Cp = .07 pF Outline 15 5082-2750/51 5082-2755 5082-2787 5082-2824 1.63 (,064} | T53 (066) be CATHODE END |DIAMETER INDICATED BY t~ 30 23 COLOR aN t s + 1,63 (.064) lt] amie 2.08 {.082} .33 (.210) 1.78 .070) a E |__2.13 1.064) | 1.38 (078) Outline 49 + 050) 040) ( @ als als DIMENSIONS IN MILLIMETERS AND (INCHES). ~ CATHODE Lp > 30h 4 Cp + 13 pF Outline 44 ture is 230C for 5 seconds. Marking is by digital coding with a cathode band. The HP Outline 49 package has a metal-ceramic hermetic seal. The anode and cathode studs are gold-plated Kovar. The maximum soldering tempera- 3-90 ture is 230C for 5 seconds. Stud-stud TIR is 0.010" max. The HP Outline 44 package is a hermetically sealed ceramic package. The anode and cathode are gold-plated Kovar. The maximum soldering tempera- ture is 230C for 5 seconds. Maximum Ratings Junction Operating and Storage Temperature Range 5082-2824 -65C to +200 C All Others ...-60C to +150 C DC Power Dissipation Power Absorbed by Diode Derate Linearly to Zero at Maximum Temperature 5082-2824 0... ccccsesssessscsecscecnssoseesesesassesescoenssesseecarsnatssucecsnses 250 mW Al) Othe Ts 0... eececsccosssssccessccessseesencssressscneecssossseasansestaraseeees 100 mW Soldering Temperature ...........ccscccsecssecssesessenesercereses 260C for 5 sec. RF Peak Pulse Power at Tcasp = 25C (Pulse Width = 1 ps, Du = 0.001) 5082-2824 (Power Absorbed by Diode) ................c:csseccecsseessoes 4.5 W All Others (Power Incident)................. 2.0 W Maximum Peak Inverse Voltage (PIV)............::ccsscssssssenesseeceeereneees Var Note: The 2700 series diodes are ESD sensitive. Handle with care to avoid static discharge through the diode. Electrical Specifications at T, = 25C Typical Parameters Voltage Video Minimum |} Noise Tem- |Junction Part Maximum Sensitivity Resistance | Breakdown perature | Capaci- Number | Package | Tangential Sensitivity Minimum Ry &Q) Voltage Ratio atf | tance 5082- Outline TSS (dBm) + (mViW) Min. Max.| Vua(V) (dB) Cy5o (PF) 2824 16 -56 6.0 12 1.5 15 2 at 20 kHz 1.0 8 at 1 kHz 2787* -52 3.5 18 4 6.0 at 20 kHz 12 15.0 at 1 kHz 2755 -55 5 16 1 2751 49 2760 44 Test Video Bandwidth = 2 MHz} Same as for TSS at Tp=10pA Ry =50Q V=0 Conditions far = 2 GHz for 5082-2824,| RF Signal Power 10 GHz for all others Level of -40 dBm. Tpiag = 20 HA; Video Amp. | Load Resistance Eq. Noise, R, = 500 9. = 100kQ *RF Parameters for the 5082-2787 are sample tested only. NOISE TEMPERATURE RATIO (dB) Figure 1. Typical Flicker (1/f) Noise vs. Frequency. 30 1 at oT BIAS = 20 uA 20 WN 082-2750/51/55 0 pee 5082-2824 -10 po bs po 102 103 104% 108 FREQUENCY (Hz} tov iv 100 mv 10 mv Egyr - VOLTAGE OUTPUT 100 KV 10 nV EQUENCY = GHz = 204A LINEAR * SQUARE LAW POWER INPUT {dBm) (6082-2750 Series). 3-91 Figure 2. Typical Dynamic Transfer Characteristic. 62 | E TEST CONDITIONS o z | BW = 2 MHz >; & OC BIAS = 202A E \ Rg = 500 2 > = : . Ry = 100 KQ | PDS ON EEE 2 ' a 4 \ g002 2780/81/88 a 5082-2824 al < | | INQ N z BMP aN Qg <z < i F 52 | 1 2 4 6 8 10 12 14 16 18 20 5082.2750/51/55 1 2 4 5 5082-2824 SIGNAL FREQUENCY (GHz) Figure 3. Typical TSS vs. Frequency. 100 E 7? E fAV=ERg = F i 5082-2824 <q WE + = & ! | 4 bE FE 082-2750 SERIES 2 - 3 4 1 = 7 3 2 a o a a Ob: 4 = a & q = ~ / 7 = - 2 o0iL / 3 9.0015 02. O44 06 08 1.0 FORWARD DC VOLTAGE [v) Figure 5. Typical Forward Characteristics at T, = 25C. Figure 7. Typical Admittance Characteristics, 5082-2755 with External Bias. 68 om 4 = ToOoY a 2 56 > \ E > 54 N a z wi \ al z 2 \ 2 9 n 4 50 < e a 4g | t= 2 GHz: 5082-2824 2 f = 10 GHz: 5082-2750 SERIES = BW = 2 MHz 46 1 pol 1 1 Lip duit 1 ai 1 5 10 100 500 DC BIAS CURRENT (uA) Figure 4. Typical TSS vs. Bias. Figure 6. Typical Admittance Characteristics, 5082-2824 with External Bias. Figure 8. Typical Admittance Characteristics, 5082-2755 with Self Bias. 3-92 Figure 12. Typical Admittance Characteristics, 5082: 2750 with External Bias. i 10. i 2761 with External Bias. Figure 11. Typical Admittance Characteristics, 5082- 2750 with Self Bias. i 9. i with Self Bias. 3-93