Aug. 2015. Version 1.2 MagnaChip Semiconductor Ltd.
1
MDV3605– Single P-Channel Trench MOSFET
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
V
Gate-Source Voltage
VGSS
V
Continuous Drain Current (1)
TC=25 oC (Package limited)
ID
A
TC=25 oC (Silicon limited)
TC=70 oC (Silicon limited)
TA=25oC
TA=70oC
Pulsed Drain Current
IDM
A
Power Dissipation
TC=25oC
PD
25.0
W
TC=70oC
16
TA=25oC
3.4(3)
TA=70oC
2.2
Single Pulse Avalanche Energy (2)
EAS
60.5
mJ
Junction and Storage Temperature Range
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Symbol
Rating
Unit
Thermal Resistance, Junction-to-Ambient (Note 1)
RθJA
36
oC/W
Thermal Resistance, Junction-to-Case
RθJC
5.0
MDV3605
Single P-Channel Trench MOSFET, -30V, -20A, 18.0mΩ
General Description
The MDV3605 uses advanced MagnaChip’s MOSFET
Technology to provide low on-state resistance.
This device is suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
Features
VDS = -30V
ID = -20A @VGS = -10V
RDS(ON)
< 18.0mΩ @VGS = -10V
< 33.0mΩ @VGS = -4.5V
Applications
Load Switch
General purpose applications
Smart Module for Note PC Battery
PDFN33
S
S
S
G
G
S
S
S
D
D
D
D
D
D
D
D
D
G
S
G
S
Aug. 2015. Version 1.2 MagnaChip Semiconductor Ltd.
2
MDV3605– Single P-Channel Trench MOSFET
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDV3605URH
-55~150oC
PDFN33
Tape & Reel
Halogen Free
Electrical Characteristics (Ta = 25oC unless otherwise noted)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = -250μA, VGS = 0V
-30
-
-
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = -250μA
-1.0
-2.0
-3.0
Drain Cut-Off Current
IDSS
VDS = -30V, VGS = 0V
-
-1
μA
Gate Leakage Current
IGSS
VGS = ±25V, VDS = 0V
-
-
±0.1
Drain-Source ON Resistance
RDS(ON)
VGS = -10V, ID = -8A
-
14.0
18.0
mΩ
VGS = -5.0V, ID = -8A
21.0
28.0
VGS = -4.5V, ID = -8A
25.0
33.0
Forward Transconductance
gFS
VDS = -5V, ID = -10A
21.5
-
S
Dynamic Characteristics
Total Gate Charge
Qg
VDS = -15V, ID = -8A
VGS = -10V
-
22.0
-
nC
Gate-Source Charge
Qgs
-
3.3
-
Gate-Drain Charge
Qgd
-
4.3
-
Input Capacitance
Ciss
VDS = -15V, VGS = 0V,
f = 1.0MHz
-
1035
-
pF
Reverse Transfer Capacitance
Crss
-
150
-
Output Capacitance
Coss
-
260
-
Gate Resistance
Rg
f = 1.0MHz
-
6.4
-
Ω
Turn-On Delay Time
td(on)
VGS = -10V ,VDS = -15V,
ID = -8A, RGEN = 3Ω
-
12.0
-
ns
Turn-On Rise Time
tr
-
12.4
-
Turn-Off Delay Time
td(off)
-
52.1
-
Turn-Off Fall Time
tf
-
8.9
-
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
VSD
IS = -1A, VGS = 0V
-
-0.71
-1.0
V
Body Diode Reverse Recovery Time
trr
IF = -8A, di/dt = 100A/μs
-
30.8
ns
Body Diode Reverse Recovery Charge
Qrr
-
26.4
-
nC
Note :
1. Surface mounted RF4 board with 2oz. Copper.
2. Starting TJ=25°C, L=1.0mH, IAS= -11.0A VDD=-20.0V, VGS=-10.0V. Tested at IAS=-8.5A.
3. T < 10sec
Aug. 2015. Version 1.2 MagnaChip Semiconductor Ltd.
3
MDV3605– Single P-Channel Trench MOSFET
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
0 1 2 3 4 5
0
5
10
15
20
25
30
35
40
45
50
VGS=-4.0V
-8.0V
-6.0V
VGS=-3.0V
VGS=-2.5V
-10.0V
-5.0V
VGS=-3.5V
-ID [A]
-VDS [V]
010 20 30 40
0
5
10
15
20
25
30
35
40
VGS=-5V
VGS=-10V
RDS(ON) [mΩ ]
-ID [A]
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
*Note; ID=-8A
VGS=-10V
RDS(ON), (Normalized)
Drain-Source On-Resistance [mΩ ]
TJ, Junction Temperature [℃]
2 3 4 5 6 7 8 9 10
5
10
15
20
25
30
35
40
*Note ; ID=-8A
RDS(ON) [mΩ ]
-VGS [V]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
5
10
15
20
25
30
* Note ; VDS=-5V
-ID [A]
-VGS [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
100
101
※ Notes :
VGS = 0V
-IS, Reverse Drain Current [A]
-VSD, Source-Drain voltage [V]
Aug. 2015. Version 1.2 MagnaChip Semiconductor Ltd.
4
MDV3605– Single P-Channel Trench MOSFET
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs.
Ambient Temperature
Fig.11 Transient Thermal Response Curve
0 5 10 15 20 25 30
0
300
600
900
1200
1500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
-VDS [V]
10-1 100101102
10-1
100
101
102
103
10s
100s
1s
100 ms
DC
10 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
TJ=Max Rated
TC=25℃
-ID [A]
-VDS [V]
25 50 75 100 125 150
0
10
20
30
40
-ID [A]
TC [℃]
10-4 10-3 10-2 10-1 100101102103
10-2
10-1
100
101
* Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC
* Rθ JC
(t) + TC
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ JC
, Thermal Response
t1, Rectangular Pulse Duration [s]
0 5 10 15 20 25 30
0
2
4
6
8
10
* Note :VDS = -15V
ID = -8A
-VGS [V]
-Qg [nC]
Aug. 2015. Version 1.2 MagnaChip Semiconductor Ltd.
5
MDV3605– Single P-Channel Trench MOSFET
Package Dimension
PowerDFN33 (3.3x3.3mm)
Dimensions are in millimeters, unless otherwise specified
Aug. 2015. Version 1.2 MagnaChip Semiconductor Ltd.
6
MDV3605– Single P-Channel Trench MOSFET
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.