UTC 2SD468 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES *Low frequency power amplifier *Complement to 2SB562 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified) PARAMETER SYMBOL VALUE UNIT VCBO VCEO VEBO Ic Ic(peak) PC Tj TSTG 25 20 5 1 1.5 0.9 150 -55 ~ +150 V V V A A W C C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Collector Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector Cut-Off Current DC Current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Note: Pulse test V(BR)CBO V(BR)CEO Ic=10A, IE=0 Ic=1mA, RBE= 25 20 V(BR)EBO ICBO hFE VCE(sat) IE=10A, IC=0 VCB=20V, IE=0 VCE=2V, Ic=0.5A (note) Ic=0.8A, IB=0.08A (note) 5 VBE fT Cob VCE=2V, Ic=0.5A (note) VCE=2V, Ic=0.5A (note) VCB=10V, IE=0, f=1MHz UTC UNISONIC TECHNOLOGIES TYP MAX UNIT V V 85 0.2 1 240 0.5 0.79 190 22 1 CO. LTD V A V V MHz pF 1 QW-R211-003,A UTC 2SD468 NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE RANK RANGE B 85 - 170 C 120 - 240 TYPICAL PERFORMANCE CHARACTERISTICS UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R211-003,A UTC 2SD468 UTC NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO. LTD 3 QW-R211-003,A