2SK4030LS Ordering number : ENN8363 N-Channel Silicon MOSFET 2SK4030LS General-Purpose Switching Device Applications Features * * Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 200 Gate-to-Source Voltage VGSS 20 V 9 A Drain Current (DC) ID Drain Current (Pulse) IDP PW10s, duty cycle1% V 36 A 2.0 W Allowable Power Dissipation PD 25 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS 21 mJ Avalanche Current *2 IAV 9 A Tc=25C Note : *1 VDD=10V, L=500H, IAV=9A *2 L200H, Single pulse Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min ID=1mA, VGS=0V VDS=100V, VGS=0V VGS= 16V, VDS=0V 200 VDS=10V, ID=1mA VDS=10V, ID=4.5A 1.5 Forward Transfer Admittance VGS(off) yfs Static Drain-to-Source On-State Resistance RDS(on) ID=4.5A, VGS=10V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS Conditions IDSS IGSS typ max V 100 10 3.5 2.5 6 250 Marking : K4030 Unit A A V S 350 m Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005QA MS IM TB-00001579 No.8363-1/4 2SK4030LS Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 700 Output Capacitance 140 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 55 pF Turn-ON Delay Time td(on) See specified Test Circuit. 14 ns Rise Time tr td(off) See specified Test Circuit. 19 ns See specified Test Circuit. 200 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge 80 ns VDS=50V, VGS=10V, ID=9A See specified Test Circuit. 37.5 nC 2.4 nC 15.6 Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=50V, VGS=10V, ID=9A VDS=50V, VGS=10V, ID=9A Diode Forward Voltage VSD IS=9A, VGS=0V nC 1.0 1.5 V Package Dimensions unit : mm 7509-002 4.5 10.0 2.8 0.6 16.1 16.0 7.2 3.5 3.2 1.2 14.0 3.6 0.9 1.2 0.75 0.7 1 : Gate 2 : Drain 3 : Source 2.4 1 2 3 2.55 SANYO : TO-220FI(LS) 2.55 Switching Time Test Circuit VIN Avalanche Resistance Test Circuit VDD=50V 10V 0V L ID=4.5A RL=22.2 VIN D 50 VOUT PW=10s D.C.1% 2SK4030LS 10V 0V G 50 VDD 2SK4030LS P.G 50 S No.8363-2/4 2SK4030LS 20 Tc=25C 18 V 8V 6V 16 Drain Current, ID -- A 14 12 10 4V 8 6 VGS=3V 1 2 3 4 5 6 7 Drain-to-Source Voltage, VDS -- V 0 8 3 4 Static Drain-to-Source On-State Resistance, RDS(on) -- m 600 500 Tc=75C 300 25C 200 --25C 100 0 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 700 7 8 9 10 IT09274 600 500 400 300 200 100 0 --50 10 0 --25 25 50 75 100 125 Case Temperature, Tc -- C 150 IT09276 IS -- VSD 3 2 VDS=10V VGS=0V 10 7 5 5 5C --2 = Tc C 25 3 2 1.0 7 3 2 1.0 7 5 3 2 0.1 7 5 3 2 5 --25C C 75 7 C 25C Source Current, IS -- A 10 3 0.1 6 ID=4.5A VGS=10V IT09275 yfs -- ID 3 5 RDS(on) -- Tc 800 700 3 2 Gate-to-Source Voltage, VGS -- V ID=4.5A 400 1 IT09273 RDS(on) -- VGS 800 Static Drain-to-Source On-State Resistance, RDS(on) -- m 6 0 0 Forward Transfer Admittance, yfs -- S 8 2 0 0.01 2 3 5 7 1.0 2 3 5 7 2 10 Drain Current, ID -- A 3 0 0.6 0.9 1.2 1.5 Diode Forward Voltage, VSD -- V IT09278 Ciss, Coss, Crss -- VDS 5 f=1MHz VDD=50V VGS=10V td(off) 3 0.3 IT09277 SW Time -- ID 5 3 2 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 10 4 2 2 12 Tc= 7 4 75C 14 Tc=75 Drain Current, ID -- A 16 --25C 25 C 10 5C 18 ID -- VGS VDS=10V Tc= --2 5C 25C ID -- VDS 20 100 7 tf 5 3 tr 2 Ciss 7 5 3 Coss 2 Crs 100 s 7 td(on) 5 10 7 0.1 1000 3 2 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT09279 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT09280 No.8363-3/4 2SK4030LS VGS -- Qg 10 10 <10s s 10 s m s 2 2 on ati er 3 3 op 4 s 0m 5 1m 10 6 ID=9A 10 7 5 10 Drain Current, ID -- A 7 s 0 2 8 Operation in this area is limited by RDS(on). 1.0 7 5 3 Tc=25C Single pulse 2 1 0 0 5 10 15 20 25 30 Total Gate Charge, Qg -- nC 35 0.1 0.1 40 2 3 5 7 1.0 Allowable Power Dissipation, PD -- W 1.5 1.0 0.5 0 3 5 7 10 2 3 5 7 100 2 3 IT09282 PD -- Tc 30 2.0 2 Drain-to-Source Voltage, VDS -- V IT09281 PD -- Ta 2.5 Allowable Power Dissipation, PD -- W IDP=36A 3 DC Gate-to-Source Voltage, VGS -- V 9 ASO 7 5 VDS=50V ID=9A 25 20 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT09283 0 20 40 60 80 100 120 140 Case Temperature, Tc -- C 160 IT09284 Note on usage : Since the 2SK4030LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.8363-4/4