2SK4030LS
No.8363-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8363
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
62005QA MS IM TB-00001579
2SK4030LS N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 200 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID9A
Drain Current (Pulse) IDP PW10µs, duty cycle1% 36 A
Allowable Power Dissipation PD2.0 W
Tc=25°C25W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1 EAS 21 mJ
Avalanche Current *2 IAV 9A
Note : *1 VDD=10V, L=500µH, IAV=9A
*2 L200µH, Single pulse
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 200 V
Zero-Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 100 µA
Gate-to-Source Leakage Current IGSS VGS= ±16V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.5 2.5 V
Forward T ransfer Admittance yfsVDS=10V, ID=4.5A 3.5 6 S
Static Drain-to-Source On-State Resistance
RDS(on) ID=4.5A, VGS=10V 250 350 m
Marking : K4030 Continued on next page.
2SK4030LS
No.8363-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Input Capacitance Ciss VDS=20V, f=1MHz 700 pF
Output Capacitance Coss VDS=20V, f=1MHz 140 pF
Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 55 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 14 ns
Rise T ime trSee specified Test Circuit. 19 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 200 ns
Fall T ime tfSee specified Test Circuit. 80 ns
Total Gate Charge Qg VDS=50V, VGS=10V, ID=9A 37.5 nC
Gate-to-Source Charge Qgs VDS=50V, VGS=10V, ID=9A 2.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=50V, VGS=10V, ID=9A 15.6 nC
Diode Forward Voltage VSD IS=9A, VGS=0V 1.0 1.5 V
Package Dimensions
unit : mm
7509-002
Switching Time Test Circuit Avalanche Resistance Test Circuit
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55 2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5 2.8
123
10.0 3.2
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
PW=10µs
D.C.1%
P.G 50
G
S
D
ID=4.5A
RL=22.2
VDD=50V
VOUT
2SK4030LS
VIN
10V
0V
VIN
50
10V
0V
50
VDD
L
2SK4030LS
2SK4030LS
No.8363-3/4
RDS(on) -- VGS RDS(on) -- Tc
ID -- VDS ID -- VGS
Ciss, Coss, Crss -- VDS
IS -- VSD
y
fs-- ID
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V Case Temperature, Tc -- °C
Forward T ransfer Admittance,
y
fs -- S Static Drain-to-Source
On-State Resistance, RDS(on) -- m
Static Drain-to-Source
On-State Resistance, RDS(on) -- m
Drain Current, ID -- A
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
IT09275 IT09276
IT09273 IT09274
--50 --25 150
03010 15 20 255
1000
100
2
2
IT09280
IT09278
IT09277
0.1 1.0
23 57
3
3
10
1.0
1.51.20.60.3 0.90
0.01
0.1
1.0
10
5
7
3
2
5
7
3
2
5
7
3
2
3
2
7
5
5
7
2
3
2
3
2
10
23 57 32
345678910
0
300
400
800
600
500
700
200
100
0
300
400
800
600
500
700
200
100
0 25 50 75 100 125
5
3
5
7
3
5
7
25°C
--25°C
25°C
Tc= --25
°C
75
°C
Tc=
75
°C
ID=4.5A
Tc=75°C
25
°C
--25°C
Tc= --25°C
25
°C
75°C
VDS=10V
Tc=
75
°C
25
°C
--
25
°C
VGS=0V
Coss
Ciss
Crss
IT09279
0.1 710
7235
1.0
23 5
10
100
7
2
3
5
2
3
5
7
td(off)
td(on)
VDD=50V
VGS=10V f=1MHz
tr
132 456780
0
2
4
6
20
16
12
10
18
14
8
0
2
4
6
20
16
12
10
18
14
8
321 456780109
Tc=25°C
VGS=3V
4V
10V
6V
8V
VDS=10V
tf
ID=4.5A
VGS=10V
2SK4030LS
No.8363-4/4
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2005. Specifications and information herein are subject
to change without notice.
A S O
VGS -- Qg
PD -- TcPD -- Ta
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
IT09282
0.1
1.0
10
2
3
5
7
2
3
5
2
3
5
7
7
100.1 100
IDP=36A
ID=9A
100
µ
s
10
µ
s
1ms
10ms
100ms
DC operation
Operation in
this area is
limited by RDS(on).
IT09281
05 2015 30 403510 25
0
2
4
6
8
9
1
3
5
7
10
VDS=50V
ID=9A
1.0
23 57 23 57 23 2357
0
020 40 60 80 100 120
25
30
140 160
20
15
10
5
IT09283
0
020 40 60 80 100 120 140 160
2.5
2.0
1.5
1.0
0.5
IT09284
<10µs
Tc=25°C
Single pulse
Note on usage : Since the 2SK4030LS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.