ST300S Series
3
Bulletin I25158 rev. B 01/94
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Parameter ST300S Units Conditions
Switching
µs
dv/dt Maximum critical rate of rise of
off-state voltage
IRRM Max. peak reverse and off-state
IDRM leakage current
Blocking
500 V/µs TJ = TJ max. linear to 80% rated VDRM
Parameter ST300S Units Conditions
50 mA TJ = TJ max, rated VDRM/VRRM applied
PGM Maximum peak gate power 10.0 TJ = TJ max, tp ≤ 5ms
PG(AV) Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50
IGM Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT DC gate current required TJ = - 40°C
to trigger m A TJ = 25°C
TJ = 125°C
VGT DC gate voltage required TJ = - 40°C
to trigger V TJ = 25°C
TJ = 125°C
IGD DC gate current not to trigger 10.0 mA
Parameter ST300S Units Conditions
20
5.0
Triggering
VGD DC gate voltage not to trigger 0.25 V TJ = TJ max
TYP. MAX.
200 -
100 200
50 -
2.5 -
1.8 3
1.1 -
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
VT
J = TJ max, tp ≤ 5ms
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20 Ω, tr ≤ 1µs
of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, d ig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
tdTypical delay time 1.0
tqTypical turn-off time 100
1000 A/µs